A method of manufacturing integrated circuits comprising EPROM memory and logic transistors

Claim 1

A method of manufacturing MOS-type integrated circuits which comprise memory floating gate transistors and logic transistors, comprising the steps of: (a) forming thick oxide areas; (b) forming, between the thick oxide areas, a first gate oxide layer, and depositing a first polysilicon layer and a first isolation layer; (c) etching, at the position of the logic transistors, (i) the first isolation layer, (ii) the first polysilicon layer, and (iii) the first gate oxide layer; (d) forming a second gate oxide layer and depositing a second polysilicon layer; (e) depositing a second isolation layer; (f) etching, at the position of the memory transistors and logic transistors, the second isolation layer and the second polysilicon layer; (g) etching in the memory area, vertically with respect to the second isolation layer and second polysilicon layer eteched during step (f), the first isolation layer and the first polysilicon layer; (h) implanting heavily doped sources and drains of the memory transistors; (i) implanting, at the position of the logic transistor sources and drains, a first lightly doped region; (j) removing the second isolation layer at the position of the logic transistors; (k) depositing a third isolation layer which is then anisotropically etched on the whole circuit while leaving in the memory area lateral regions on the lateral edges of sandwiches of the first and second polysilicon layers and leaving, at the position of the logic transistors, spacers on the lateral edges of the remaining portions of the second polysilicon layer; (l) implanting at the position of the logic transistor sources and drains a second heavily doped region; (m) depositing in a memory area a silicon nitride layer, depositing on the whole circuit a fourth isolation layer, etching contact regions in the fourth isolation layer in the memory area and at the position of the logic transistors, the contacts in the memory area being self-aligned with respect to the sandwiches of the first and second polysilicon layers, and depositing a metal layer.

Claim 2

A method of manufacturing MOS-type integrated circuits which comprise memory floating gate transistors and logic transistors, comprising the steps of: (a) forming thick oxide areas; (b) forming, between the thick oxide areas, a first gate oxide layer, and depositing a first polysilicon layer and a first isolation layer; (c) etching, at the position of the logic transistors, (i) the first isolation layer, (ii) the first polysilicon layer, and (iii) the first gate oxide layer; (d) forming a second gate oxide layer and depositing a second polysilicon layer; (e) depositing a second isolation layer; (f) etching, at the position of the memory transistors and logic transistors, the second isolation layer and the second polysilicon layer; (g) etching in the memory area, vertically with respect to the second isolation layer and second polysilicon layer eteched during step (f), the first isolation layer and the first polysilicon layer; (h) implanting heavily doped sources and drains of the memory transistors; (i) implanting, at the position of the logic transistor sources and drains, a first lightly doped region; (j) removing the second isolation layer at the position of the logic transistors; (k) depositing a third isolation layer which is then anisotropically etched on the whole circuit while leaving in the memory area lateral regions on the lateral edges of sandwiches of the first and second polysilicon layers and leaving, at the position of the logic transistors, spacers on the lateral edges of the remaining portions of the second polysilicon layer; (l) implanting at the position of the logic transistor sources and drains a second heavily doped region; (m) depositing in a memory area a silicon nitride layer, depositing on the whole circuit a fourth isolation layer, etching contact regions in the fourth isolation layer in the memory area and at the position of the logic transistors, the contacts in the memory area being self-aligned with respect to the sandwiches of the first and second polysilicon layers, and depositing a metal layer.