US5012301A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Three terminal semiconductor device
Assignee: Nortel Networks Ltd
•
Filing: 1990-02-22
•
Granted: 1991-04-30
•
Expires: 2010-02-22
Abstract
Abstract A three terminal semiconductor device relies on resonant tunnelling through a quantum well resonator for its operation. The device has a first layer of a narrow bandgap semiconductor, a second layer of a narrow bandgap semiconductor, and a quantum well resonator between the first layer of a narrow bandgap semiconductor and the second layer of a narrow bandgap semiconductor. The quantum well resonator comprises a first layer of a wide bandgap semiconductor, a second layer of a wide bandgap semiconductor, and a third layer of a narrow bandgap semiconductor between the first layer of a wide bandgap semiconductor and the second layer of a wide bandgap semiconductor. All of the layers referred to above have a common conductivity polarity. The semiconductor device further comprises an electrical contact to the first layer of a narrow bandgap semicondcutor, an electrical contact to the second layer of a narrow bandgap semiconductor, and a terminal for applying a non-uniform electric field to the quantum well resonator to modulate resonant tunnelling characteristics of the quantum well resonator. The terminal for applying a non-uniform electric field to the quantum well resonator may comprise a field plate on the first layer of a narrow bandgap semiconductor, on the second layer of a narrow bandgap semiconductor. Alternatively, the terminal for applying a non-uniform electric field to the quantum well resonator may comprise a doped region extending into the third layer of a narrow bandgap semiconductor. The semiconductor device is useful in switching or logic applications, and in millimeter wave applications.
Inventors
- 👤 Jingming Xu
- 👤 Mark A. Sweeney
- 👤 Derek J. Day
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 16:57
CPC Classifications
B; B82; B82Y; B82Y10/00; H; H10; H10D; H10D30/00
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
189 words
A semiconductor device, comprising: a semiconductor body comprising: a first layer of a narrow bandgap semiconductor; a second layer of a narrow bandgap semiconductor; and a substantially two-dimensional quantum well resonator between the first layer of a narrow bandgap semiconductor and the second layer of a narrow bandgap semiconductor, the quantum well resonator comprising a first layer of a wide bandgap semiconductor, a second layer of a wide bandgap semiconductor, and a third layer of a narrow bandgap semiconductor between the first layer of a wide bandgap semiconductor and the second layer of a wide bandgap semiconductor; all of said layers having a common conductivity polarity; an electrical contact to the first layer of a narrow bandgap semiconductor; an electrical contact to the second layer of a narrow bandgap semiconductor; and a field plate for applying a non-uniform electric field to the quantum well resonator, the field plate being disposed on one of the first layer of a narrow bandgap semiconductor and the second layer of a narrow bandgap semiconductor, being located adjacent to the electrical contact to that layer, and being substantially parallel to the quantum well resonator.
Claim 2
Dependent Claim
189 words
A semiconductor device, comprising: a semiconductor body comprising: a first layer of a narrow bandgap semiconductor; a second layer of a narrow bandgap semiconductor; and a substantially two-dimensional quantum well resonator between the first layer of a narrow bandgap semiconductor and the second layer of a narrow bandgap semiconductor, the quantum well resonator comprising a first layer of a wide bandgap semiconductor, a second layer of a wide bandgap semiconductor, and a third layer of a narrow bandgap semiconductor between the first layer of a wide bandgap semiconductor and the second layer of a wide bandgap semiconductor; all of said layers having a common conductivity polarity; an electrical contact to the first layer of a narrow bandgap semiconductor; an electrical contact to the second layer of a narrow bandgap semiconductor; and a field plate for applying a non-uniform electric field to the quantum well resonator, the field plate being disposed on one of the first layer of a narrow bandgap semiconductor and the second layer of a narrow bandgap semiconductor, being located adjacent to the electrical contact to that layer, and being substantially parallel to the quantum well resonator.
Claim 3
Dependent Claim
20 words
A semiconductor device as defined in claim 1, wherein the field plate comprises a conductive layer on an insulating layer.
Claim 4
Dependent Claim
16 words
A semiconductor device as defined in claim 1, wherein the field plate comprises a Schottky diode.
Claim 5
Dependent Claim
16 words
A semiconductor device as defined in claim 1, wherein the field plate comprises a pn junction.
Claim 6
Dependent Claim
153 words
A semiconductor device, comprising: a semiconductor body comprising: a first layer of a narrow bandgap semiconductor a second layer of a narrow bandgap semiconductor; and a quantum well resonator between the first layer of a narrow bandgap semiconductor and the second layer of a narrow bandgap semiconductor, the quantum well resonator comprising a first layer of a wide bandgap semiconductor, a second layer of a wide bandgap semiconductor, and a third layer of a narrow bandgap semiconductor between the first layer of a wide bandgap semiconductor and the second layer of a wide bandgap semiconductor; all of said layers having a common conductivity polarity; an electrical contact to the first layer of a narrow bandgap semiconductor; an electrical contact to the second layer of a narrow bandgap semiconductor; and a doped region extending into the third layer of a narrow bandgap semiconductor for applying a non-uniform electric field to the quantum well resonator.
Claim 7
Dependent Claim
153 words
A semiconductor device, comprising: a semiconductor body comprising: a first layer of a narrow bandgap semiconductor a second layer of a narrow bandgap semiconductor; and a quantum well resonator between the first layer of a narrow bandgap semiconductor and the second layer of a narrow bandgap semiconductor, the quantum well resonator comprising a first layer of a wide bandgap semiconductor, a second layer of a wide bandgap semiconductor, and a third layer of a narrow bandgap semiconductor between the first layer of a wide bandgap semiconductor and the second layer of a wide bandgap semiconductor; all of said layers having a common conductivity polarity; an electrical contact to the first layer of a narrow bandgap semiconductor; an electrical contact to the second layer of a narrow bandgap semiconductor; and a doped region extending into the third layer of a narrow bandgap semiconductor for applying a non-uniform electric field to the quantum well resonator.
Claim 8
Dependent Claim
46 words
A semiconductor device as defined in claim 5, wherein the electrical contacts to the first and second layers of a narrow bandgap semiconductor comprise doped layers having a first conductivity polarity and the doped region has a second conductivity polarity opposite to the first conductivity polarity.
Claim 9
Independent Claim
159 words
A method of modulating resonant tunnelling from a first layer of a narrow bandgap semiconductor through a substantially two-dimensional quantum well resonator to a second layer of a narrow bandgap semiconductor, the quantum well resonator comprising a first layer of a wide bandgap semiconductor, a second layer of a wide bandgap semiconductor, and a third layer of a narrow bandgap semiconductor between the first layer of a wide bandgap semiconductor and the second layer of a wide bandgap semiconductor, all of said layers having a common conductivity polarity, the method comprising electrically biasing the first layer of a narrow bandgap semiconductor with respect to the second layer of a narrow bandgap semiconductor while applying a non-uniform electric field to the quantum well resonator by electrically biasing a field plate on one of the first layer of a narrow bandgap semiconductor and the second layer of a narrow bandgap semiconductor to extend a depletion region into the quantum well resonator.
Claim 10
Independent Claim
159 words
A method of modulating resonant tunnelling from a first layer of a narrow bandgap semiconductor through a substantially two-dimensional quantum well resonator to a second layer of a narrow bandgap semiconductor, the quantum well resonator comprising a first layer of a wide bandgap semiconductor, a second layer of a wide bandgap semiconductor, and a third layer of a narrow bandgap semiconductor between the first layer of a wide bandgap semiconductor and the second layer of a wide bandgap semiconductor, all of said layers having a common conductivity polarity, the method comprising electrically biasing the first layer of a narrow bandgap semiconductor with respect to the second layer of a narrow bandgap semiconductor while applying a non-uniform electric field to the quantum well resonator by electrically biasing a field plate on one of the first layer of a narrow bandgap semiconductor and the second layer of a narrow bandgap semiconductor to extend a depletion region into the quantum well resonator.
Claim 11
Independent Claim
147 words
A method of modulating resonant tunnelling from a first layer of a narrow bandgap semiconductor through a quantum well resonator to a second layer of a narrow bandgap semiconductor, the quantum well resonator comprising a first layer of a wide bandgap semiconductor, a second layer of a wide bandgap semiconductor, and a third layer of a narrow bandgap semiconductor between the first layer of a wide bandgap semiconductor and the second layer of a wide bandgap semiconductor, all of said layers having a common conductivity polarity, the method comprising electrically biasing the first layer of a narrow bandgap semiconductor with respect to the second layer of a narrow bandgap semiconductor while applying a non-uniform electric field to the quantum well resonator by electrically biasing a doped region extending into the third layer of a narrow bandgap semiconductor to extend a depletion region into the quantum well resonator.
Claim 12
Independent Claim
147 words
A method of modulating resonant tunnelling from a first layer of a narrow bandgap semiconductor through a quantum well resonator to a second layer of a narrow bandgap semiconductor, the quantum well resonator comprising a first layer of a wide bandgap semiconductor, a second layer of a wide bandgap semiconductor, and a third layer of a narrow bandgap semiconductor between the first layer of a wide bandgap semiconductor and the second layer of a wide bandgap semiconductor, all of said layers having a common conductivity polarity, the method comprising electrically biasing the first layer of a narrow bandgap semiconductor with respect to the second layer of a narrow bandgap semiconductor while applying a non-uniform electric field to the quantum well resonator by electrically biasing a doped region extending into the third layer of a narrow bandgap semiconductor to extend a depletion region into the quantum well resonator.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-04-29 | 1994-10-29 | 1995-04-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-04-29 | 1998-10-29 | 1999-04-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-04-29 | 2002-10-29 | 2003-04-30 | $7700.00 | Window Closed / Lapsed |