Abstract A semiconductor integrated resonant-tunneling device having multiple negative-resistance regions, and having essentially equal current peaks in such regions, is useful as a highly compact element, e.g., in apparatus designed for ternary logic operations, frequency multiplication, waveform scrambling, memory operation, parity-bit generation, and coaxial-line driving. The device can be made by layer deposition on a substrate and includes a resonant-tunneling structure between contacts such that side-by-side first and third contacts are on one side, and a second contact is on the opposite side of the resonant-tunneling structure. Disclosed further are (two-terminal) resonant-tunneling diodes as incorporated in memory devices, e.g., in lieu of 2-transistsor flip-flops; room-temperature device operation; and devices comprising an essentially undoped accelerator region between an emitter contact and a resonant-tunneling structure.
A device comprising a resonant-tunneling structure, said structure comprising a quantum-well layer between quantum-barrier layers on a substrate, with emitter and collector contacts on opposite sides of said resonanttunneling structure, said device further comprising an essentially undoped accelerator-region layer between said emitter contact and said resonant-tunneling structure.
Claim 2
Independent Claim
47 words
A device comprising a resonant-tunneling structure, said structure comprising a quantum-well layer between quantum-barrier layers on a substrate, with emitter and collector contacts on opposite sides of said resonanttunneling structure, said device further comprising an essentially undoped accelerator-region layer between said emitter contact and said resonant-tunneling structure.
Claim 3
Dependent Claim
22 words
The device of claim 1 in which said accelerator-region layer has a thickness which is greater than or equal to 400 Angstroms.