US4704622A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Negative transconductance device
Assignee: Nokia Bell Labs
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Filing: 1985-11-27
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Granted: 1987-11-03
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Expires: 2005-11-27
Abstract
Abstract A resonant tunneling device having a one-dimensional quantum well comprises a semiconductor region capable of exhibiting one-dimensional quantization. The device comprises source and drain contact regions adjoining such semiconductor region as well as a gate contact for applying a field to such region; the device can be implemented, e.g., by methods of III-V deposition and etching technology. Under suitable source-drain bias conditions the device can function as a transistor having negative transconductance.
Inventors
- 👤 Federico Capasso
- 👤 Sergey Luryi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 19:14
CPC Classifications
B; B82; B82Y; B82Y10/00; H; H10; H10D; H10D30/00; H10D30/40; H10D30/43; H10D62/00; H10D62/10; H10D62/17; H10D62/213; H10D62/221; H10D62/80; H10D62/81; H10D62/815; H10D62/8161; H10D62/82; H10D62/824
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
73 words
A semiconductor device comprising first and second semiconductor regions; a third semiconductor region which forms a quantum well wire layer and is capable of exhibiting carrier motion quantized in two-dimensions (x and y) and free in a third-dimension (z) said third region being between said first and second semiconductor regions; first and second electrical contacts to said first and second regions, respectively; and means for applying an electric field to said third region.
Claim 2
Dependent Claim
73 words
A semiconductor device comprising first and second semiconductor regions; a third semiconductor region which forms a quantum well wire layer and is capable of exhibiting carrier motion quantized in two-dimensions (x and y) and free in a third-dimension (z) said third region being between said first and second semiconductor regions; first and second electrical contacts to said first and second regions, respectively; and means for applying an electric field to said third region.
Claim 3
Dependent Claim
37 words
A device as recited in claim 1 in which said first and second regions are capable of exhibiting one-dimensional (y) quantization, carriers being free in two dimensions (x and z) thus forming first and second quantum wells.
Claim 4
Dependent Claim
26 words
A device as recited in claim 2 in which said third region further comprises two barrier layers on opposed sides of said quantum well wire layer.
Claim 5
Dependent Claim
45 words
A device as recited in claim 3, said means for applying an electric field comprising a third barrier layer contacting said first, second and third regions, and said third barrier layer having a bandgap greater than the bandgaps of said first, second and third regions.
Claim 6
Dependent Claim
33 words
A device as recited in claim 4, said means for applying an electric field comprising a conducting gate layer on said third barrier layer and an electric contact to said conducting gate layer.
References Cited (Backward Citations)
US4194935A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-11-02 | 1991-05-04 | 1991-11-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-11-02 | 1995-05-04 | 1995-11-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-11-02 | 1999-05-04 | 1999-11-03 | $7700.00 | Window Closed / Lapsed |