US5010388A
Expired / Lapsed
US
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Connection structure between components for semiconductor apparatus
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1988-06-28
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Granted: 1991-04-23
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Expires: 2008-06-28
Abstract
Abstract A connection structure between lead frames and a base plate of aluminum nitride, to be applied as a connection structure between components of a semiconductor apparatus, has a base plate made of a sintered body of aluminum nitride on which a semiconductor device is to be mounted. The lead frames are made of iron alloy containing nickel in 29 wt. % and cobalt in 17 wt. %. A silver solder is used for joining the base plate and the lead frames. A surface of the lead frame to be joined to the base plate is clad with a stress relief layer of oxygen-free copper of a high plastic deformability to relieve, by its plastic deformation, a thermal stress caused by a difference between a thermal expansion coefficient of the aluminum nitride base plate and that of the lead frame in a cooling process at the time of soldering. Preferably, only a portion of each lead frame to be joined to the base plate comprises an inner layer of an iron alloy containing 29 wt. % of nickel and 17 wt. % of cobalt, and an outer layer portion of oxygen-free copper.
Inventors
- 👤 Akira Sasame
- 👤 Hitoyuki Sakanoue
- 👤 Hisao Takeuchi
- 👤 Masaya Miyake
- 👤 Akira Yamakawa
- 👤 Yasuhisa Yushio
- 👤 Hitoshi Akazawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 22:57
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/099; H05; H05K; H05K3/00; H05K3/30; H05K3/32; H05K3/34; H05K3/3405; H10W70/40; H10W70/456; H10W70/457; H10W76/00; H10W76/60; H10W90/00; H10W90/701; H05K1/00; H05K1/02; H05K1/03; H05K1/0306; H05K2201/00; H05K2201/03; H05K2201/0332; H05K2201/0335; H05K2201/0347; H05K2201/10; H05K2201/10227; H05K2201/1025; H05K2201/1034; H05K2201/10613; H05K2201/10742; H05K2201/10886; H05K2201/10909; H05K2201/10916; H05K3/22; H05K3/24; H05K3/245; H05K3/246; H05K3/341; H05K3/3421; Y; Y10; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12535; Y10T428/12576
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
174 words
A connection structure between components of a semiconductor apparatus, comprising: a base member made of aluminum nitride having a major surface on which a semiconductor device is to be mounted, said aluminum nitride having a first thermal expansion coefficient, a connection member to be joined to said base member, said connection member being made of an alloy selected from the group consisting of iron-nickel alloys and iron-nickel-cobalt alloys having a second thermal expansion coefficient, a plastically deformable stress relieving member interposed between said aluminum nitride base member and said connection member, and a soldering material for joining said base member, said stress relieving member, and said connection member, said plastically deformable stress relieving member being made of a material selected from the group consisting of copper, copper alloys, nickel alloys, iron, and aluminum having a plastic deformability sufficiently high for relieving a thermal stress caused by a difference between said first and second thermal expansion coefficients of said base member and of said connection member during a cooling process at the time of soldering.
Claim 2
Dependent Claim
174 words
A connection structure between components of a semiconductor apparatus, comprising: a base member made of aluminum nitride having a major surface on which a semiconductor device is to be mounted, said aluminum nitride having a first thermal expansion coefficient, a connection member to be joined to said base member, said connection member being made of an alloy selected from the group consisting of iron-nickel alloys and iron-nickel-cobalt alloys having a second thermal expansion coefficient, a plastically deformable stress relieving member interposed between said aluminum nitride base member and said connection member, and a soldering material for joining said base member, said stress relieving member, and said connection member, said plastically deformable stress relieving member being made of a material selected from the group consisting of copper, copper alloys, nickel alloys, iron, and aluminum having a plastic deformability sufficiently high for relieving a thermal stress caused by a difference between said first and second thermal expansion coefficients of said base member and of said connection member during a cooling process at the time of soldering.
Claim 3
Dependent Claim
16 words
A connection structure in accordance with claim 1, wherein said connection member includes a lead frame.
Claim 4
Dependent Claim
40 words
A connection structure in accordance with claim 2, wherein said stress relieving member has a thickness in the range from 0.01 to 1 mm when said lead frame has a thickness of 0.1 mm and a width of 8 mm.
Claim 5
Dependent Claim
16 words
A connection structure in accordance with claim 1, wherein said base member includes a sintered body.
Claim 6
Dependent Claim
26 words
A connection structure in accordance with claim 1, wherein said connection structure further comprises a metallized layer formed on a junction surface of said base member.
Claim 7
Dependent Claim
43 words
A connection structure in accordance with claim 5, wherein said metallized layer contains at least a metal selected out of tungsten and molybdenum, at least an aluminum compound selected among the group of aluminum nitride, aluminum oxide and aluminum oxynitride, and calcium oxide.
Claim 8
Dependent Claim
28 words
A connection structure in accordance with claim 5, further comprising a plated layer formed on a surface of said metallized layer to be jointed with said soldering material.
Claim 9
Dependent Claim
28 words
A connection structure in accordance with claim 7, further comprising a plated layer formed on a surface of said connection member to be joined with said soldering material.
Claim 10
Dependent Claim
170 words
A cap for airtightly enclosing and protecting a semiconductor device mounted on an insulating base plate, comprising: a covering member made of aluminum nitride, a frame member to be joined to said covering member to surround said semiconductor device located under said covering member, said frame member being made of an alloy selected from the group consisting of iron-nickel alloys and iron-nickel-cobalt alloys, a plastically deformable stress relieving member interposed between said covering member and said frame member, and a soldering member for joining said covering member, said stress relieving member and said frame member, said plastically deformable stress relieving member being of a material selected from the group consisting of copper, copper alloys, nickel, nickel alloys, iron, and aluminum which have a plastic deformability sufficient for relieving a thermal stress caused between said covering member and said frame member by a difference between a thermal expansion coefficient of said covering member and a thermal expansion coefficient of said frame member during a cooling process at the time of soldering.
Claim 11
Dependent Claim
170 words
A cap for airtightly enclosing and protecting a semiconductor device mounted on an insulating base plate, comprising: a covering member made of aluminum nitride, a frame member to be joined to said covering member to surround said semiconductor device located under said covering member, said frame member being made of an alloy selected from the group consisting of iron-nickel alloys and iron-nickel-cobalt alloys, a plastically deformable stress relieving member interposed between said covering member and said frame member, and a soldering member for joining said covering member, said stress relieving member and said frame member, said plastically deformable stress relieving member being of a material selected from the group consisting of copper, copper alloys, nickel, nickel alloys, iron, and aluminum which have a plastic deformability sufficient for relieving a thermal stress caused between said covering member and said frame member by a difference between a thermal expansion coefficient of said covering member and a thermal expansion coefficient of said frame member during a cooling process at the time of soldering.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-04-22 | 1994-10-22 | 1995-04-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-04-22 | 1998-10-22 | 1999-04-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-04-22 | 2002-10-22 | 2003-04-23 | $7700.00 | Window Closed / Lapsed |