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US5008216A
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Process for improved contact stud structure for semiconductor devices
Assignee: International Business Machines Corp
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Filing: 1989-12-11
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Granted: 1991-04-16
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Expires: 2009-12-11
Abstract
Abstract A method for forming contact studs to connect the substrate component devices to the overlying wiring patterns is disclosed herein. The contact studs are formed by a combination of blanket depositing an adhesive and reactive layer into the contact opening. Onto said adhesive and reactive layer is deposited a seed layer and said contact stud is completed by filling the contact opening with a third metal layer. Preferably, the adhesive and reactive layer is a transistion metal and the seed and filler layers are refractory metals.
Inventors
- 👤 Hung-Chang W. Huang
- 👤 Paul A. Totta
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 21:19
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4437; H10W20/4441
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
159 words
A process for making a contact stud structure for the connection of semiconductor device components formed in a substrate to the wiring for interconnecting said device components to other device components comprising: (a) depositing an insulator material having an etch-stop layer on said device substrate, (b) forming at least one opening in said insulator material and said etch-stop layer at said device component locations, (c) depositing a first metal layer in said opening of said insulating layer and said etch-stop layer, said first metal layer being reactive with said substrate and adhesive thereto and lining said opening in said insulator and said etch-stop layer, (d) depositing a second metal layer conformally onto said first metal layer, (e) depositing a third metal layer conformally onto said second metal layer and filling said opening in said insulator layer and thereby forming said contact stud, and (f) wherein said second and third metal layers being selected from the group comprising refractory metals.
Claim 2
Dependent Claim
159 words
A process for making a contact stud structure for the connection of semiconductor device components formed in a substrate to the wiring for interconnecting said device components to other device components comprising: (a) depositing an insulator material having an etch-stop layer on said device substrate, (b) forming at least one opening in said insulator material and said etch-stop layer at said device component locations, (c) depositing a first metal layer in said opening of said insulating layer and said etch-stop layer, said first metal layer being reactive with said substrate and adhesive thereto and lining said opening in said insulator and said etch-stop layer, (d) depositing a second metal layer conformally onto said first metal layer, (e) depositing a third metal layer conformally onto said second metal layer and filling said opening in said insulator layer and thereby forming said contact stud, and (f) wherein said second and third metal layers being selected from the group comprising refractory metals.
Claim 3
Dependent Claim
25 words
The process of claim 1 wherein the thickness of said first metal layer is in the range from about 200 Å to about 1000 Å.
Claim 4
Dependent Claim
17 words
The process of claim 1 wherein the thickness of said second metal layer is about 1000 Å.
Claim 5
Dependent Claim
10 words
The process of claim 1 wherein said substrate is silicon.
Claim 6
Dependent Claim
14 words
The process of claim 1 wherein platinum is deposited on said component contact opening.
Claim 7
Dependent Claim
42 words
The process of claim 1 wherein said insulator material is a multi-layered structure comprising in sequence a bottom layer of SiO 2 , a layer of Si 3 N 4 , said etch-stop layer and a top layer of SiO 2 .
Claim 8
Dependent Claim
28 words
The process of claim 6 wherein said bottom layer of SiO 2 is about 1000 Å and said layer of Si 3 N 4 is about 1500 Å.
Claim 9
Dependent Claim
18 words
The process of claim 1 wherein said first metal layer is selected from the group comprising transition metals.
Claim 10
Dependent Claim
12 words
The process of claim 1 wherein said first metal layer is titanium.
Claim 11
Dependent Claim
26 words
The process of claim 1 wherein said first metal layer is an alloy of one of the transition metals alloyed with one of the refractory metals.
Claim 12
Dependent Claim
14 words
The process of claim 1 wherein said refractory metal of step (f) is tungsten.
Claim 13
Dependent Claim
11 words
The process of claim 10 wherein said alloy is titanium tungsten.
Claim 14
Dependent Claim
11 words
The process of claim 1, wherein said substrate is monocrystalline silicon.
Claim 15
Dependent Claim
11 words
The process of claim 1, wherein said substrate is polycrystalline silicon.
Claim 16
Dependent Claim
22 words
The process of claim 1, wherein said opening is larger than said one of said semiconductor device components formed in the substrate.
Claim 17
Dependent Claim
22 words
The process of claim 1, wherein said stud is large enough to contact a plurality of device components formed in the substrate.
Claim 18
Dependent Claim
23 words
The process of claim 1, wherein said first metal layer makes a direct physical contact with the wiring for interconnecting said device components.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-04-15 | 1994-10-15 | 1995-04-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-04-15 | 1998-10-15 | 1999-04-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-04-15 | 2002-10-15 | 2003-04-16 | $7700.00 | Window Closed / Lapsed |