Semiconductor quantum well laser

Claim 2

A semiconductor structure for use as a quantum well laser having a resonant cavity, at least one electrode, a substrate layer, a cap layer, a buffer layer and at least one clad layer, comprising at least two active layers and at least three barrier layers enclosing both sides of each said active layer, each said barrier layer being formed by alternately accumulating thin films respectively having different mixed crystal ratios so as to obtain a superlattice structure possessing an intermediate mixed crystal ratio therebetween.

Claim 3

The semiconductor structure according to claim 1, wherein said barrier layer is an AlGaAs/GaAs superlattice barrier layer of periodical structure of short period formed by alternately accumulating AlGaAs layers and GaAs layers.

Claim 4

A semiconductor structure for use as a quantum well laser having a resonant cavity, at least one electrode, a cap layer, a substrate layer, a buffer layer and at least one clad layer, comprising at least two active layers and at least three barrier layers enclosing both sides of each said active layer, each said barrier layer being formed by alternately accumulating thin films respectively having different mixed crystal ratios so as to obtain a superlattice structure possessing an intermediate mixed crystal ratio therebetween, each said thin film having a two to five molecular thickness.

Claim 5

A semiconductor structure for use as a quantum well laser having a resonant cavity, at least one electrode, a cap layer, a substrate layer, a buffer layer and at least one clad layer, comprising at least two active layers and at least three barrier layers enclosing both sides of each said active layer, each said barrier layer being formed by alternately accumulating thin films respectively having different mixed crystal ratios so as to obtain a superlattice structure possessing an intermediate mixed crystal ratio therebetween, each said thin film having a two to five molecular thickness.

Claim 6

The semiconductor structure according to claim 3, wherein said barrier layer is an AlGaAs/GaAs superlattice barrier layer of periodical structure of short period formed by alternately accumulating AlGaAs layers and GaAs layers.

Claim 7

A semiconductor structure for use as a quantum well laser having a resonant cavity, an electrode, at least one cap layer, substrate layer and a buffer layer, comprising at least one active layer, at least two barrier layers each formed by alternately accumulating Al x Ga y As layers and GaAs layers, enclosing both sides of said active layer, and two clad layers disposed outside of an outermost one of said barrier layers each clad layer having Al x Ga y As mixed crystal where said clad layer Al component has the same mixed crystal ratio x as that in said Al component of said Al x GayAs layer in said barrier layer, each said barrier having an Al mean component ratio of x/2 wherein said ratio x does not include 0 and 1 such that said different mixed crystal ratios in said barrier layer obtain a superlattice structure possessing an intermediate mixed crystal ratio therebetween.

Claim 8

A semiconductor structure for use as a quantum well laser having a resonant cavity, an electrode, at least one cap layer, substrate layer and a buffer layer, comprising at least one active layer, at least two barrier layers each formed by alternately accumulating Al x Ga y As layers and GaAs layers, enclosing both sides of said active layer, and two clad layers disposed outside of an outermost one of said barrier layers each clad layer having Al x Ga y As mixed crystal where said clad layer Al component has the same mixed crystal ratio x as that in said Al component of said Al x GayAs layer in said barrier layer, each said barrier having an Al mean component ratio of x/2 wherein said ratio x does not include 0 and 1 such that said different mixed crystal ratios in said barrier layer obtain a superlattice structure possessing an intermediate mixed crystal ratio therebetween.