Semiconductor laser

Abstract

Abstract PURPOSE:To obtain the titled device which oscillates at a much lower threshold current density than the GRIN-SCH structural semiconductor laser of present use by a method wherein a graded guide layer is put in a superlattice structure where potential wells and potential barriers are alternately laminated, and the height of the potential barrier is made larger as it separates away from an active layer. CONSTITUTION:A buffer layer 2, an N-clad layer 3, the first graded guide layer 4, the active layer 5, the second graded guide layer 6, a P type clad layer 7, and a cap layer 8 are successively crystal-grown on an N-GaAs substrate 1. The first and second graded guide layers 4 and 6 are put in the superlattice structure where the potential well layers 20 and 22 and the potential barrier layers 21 and 23 are alternately laminated, and the Al composition ratio X21 of the layer 21 is made so as to become smaller as it goes closer to the active layer 5. Next, an SiO2 film 9 is formed and then the SiO2 film in a stripe section 12 is removed. A P type electrode 10 and an N type electrode 11 are formed, and finally the whole is cut into pellets, which are then welded to a heat sink, and leads are attached, resulting in completion of the product.

Inventors

• 👤 Mitsunori Sugimoto
• 👤 杉本　満則

Bibliographic Details