Semiconductor laser device

Abstract

Abstract PURPOSE:To increase the efficiency by providing a periodically buried active layer made of quantum well, thereby reducing threshold current. CONSTITUTION:The first P type layer 2, the first active layer 3, an N type InP layer 4, the second active layer 5, the second InP layer 6 are grown on a P type InP substrate doped with Cd. A periodic structure that quantum wells 7 of approx. 100Angstrom made of InGaAsP and barriers 8 made of InP layer of approx. 100Angstrom having large forbidden band width are alternately arranged is used as the first and second active layers 3, 5. The layers 3, 5 are formed in a periodic structure made of extremely thin films, thereby eliminating the flowout of the carrier jumping out of from the well and stored in the well out of the active layer. Thus, the quantum efficiency can be improved.

Inventors

• 👤 Osamu Ueda
• 👤 修 上田

Bibliographic Details