US4999315A
Expired / Lapsed
US
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Method of controlling dopant incorporation in high resistivity In-based compound Group III-V epitaxial layers
Assignee: Nokia Bell Labs
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Filing: 1989-12-15
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Granted: 1991-03-12
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Expires: 2009-12-15
Abstract
Abstract High resistivity In-based compound Group III-V epitaxial layers are used to prevent substantial current flow through a region of a semiconductor device, such as a CSBH, DCPBH, EMBH or CMBH laser, a LED, a photodiode, a HBT, or a FET. Also disclosed is a hydride VPE process for making the high resistivity material doped with Fe. The Fe is supplied by a volatile halogenated Fe compound, and the extend of pyrolysis of the hydride is limited to allow transport of sufficient dopant to the growth area.
Inventors
- 👤 Wilbur D. Johnston, Jr.
- 👤 Robert F. Karlicek, Jr.
- 👤 Judith A. Long
- 👤 Daniel P. Wilt
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 22:18
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/819; H10H20/821; C; C30; C30B; C30B25/00; C30B25/02; C30B29/00; C30B29/10; C30B29/40; H01; H01S; H01S5/00; H01S5/20; H01S5/24; H10H20/01; H10H20/011; H10H20/013; H10H20/811; H10H20/822; H10H20/824; H10H20/8242; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2909; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; H10P14/3438; H10P14/3441; H10P14/3446; H01S5/22; H01S5/223; H01S5/2237; H01S5/227; H01S5/2275; H01S5/2277; Y; Y10; Y10S; Y10S148/00; Y10S148/023; Y10S148/041; Y10S148/065; Y10S148/119; Y10S438/00; Y10S438/914; Y10S438/925; Y10S438/934
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
121 words
A method of fabricating a device, which includes an iron-doped, indium-based, compound Group III-V semiconductor region, comprising the steps of (1) forming a precursor gas comprising a carrier gas, a volatile dopant compound, a volatile indium compound and a Group V hydride, (2) directing said precursor gas through a heated chamber to contact a heated deposition body, and (3) inducing deposition of said compound semiconductor on said body, said carrier gas comprises an inert gas, said dopant compound includes iron, the concentration of hydrogen in said precursor gas is limited to prevent excessive precipitation of iron, and the concentrations of said volatile indium compound at said body and of said Group V hydride are maintained sufficient to result in said deposition.
Claim 2
Independent Claim
121 words
A method of fabricating a device, which includes an iron-doped, indium-based, compound Group III-V semiconductor region, comprising the steps of (1) forming a precursor gas comprising a carrier gas, a volatile dopant compound, a volatile indium compound and a Group V hydride, (2) directing said precursor gas through a heated chamber to contact a heated deposition body, and (3) inducing deposition of said compound semiconductor on said body, said carrier gas comprises an inert gas, said dopant compound includes iron, the concentration of hydrogen in said precursor gas is limited to prevent excessive precipitation of iron, and the concentrations of said volatile indium compound at said body and of said Group V hydride are maintained sufficient to result in said deposition.
Claim 3
Dependent Claim
21 words
The method of claim 1 wherein the concentration of hydrogen is limited by controlling the amount of pyrolysis of said hydride.
Claim 4
Dependent Claim
12 words
The method of claim 2 wherein said inert carrier gas comprises nitrogen.
Claim 5
Dependent Claim
12 words
The method of claim 2 wherein said volatile indium compound comprises InCl.
Claim 6
Dependent Claim
15 words
The method of claim 2 wherein said volatile dopant compound comprises a halogenated iron compound.
Claim 7
Dependent Claim
16 words
The method of claim 5 wherein said compound comprises FeCl 2 , FeBr 2 or FeOCl.
Claim 8
Dependent Claim
10 words
The method of claim 2 wherein said hydride comprises phosphine.
Claim 9
Dependent Claim
19 words
The method of claim 7 wherein the amount of pyrolysis of phosphine is in the range of about 17-65%.
Claim 10
Dependent Claim
12 words
The method of claim 8 wherein said region comprises high resistivity InP.
Claim 11
Dependent Claim
17 words
The method of claim 9 wherein said region has a resistivity greater than about 5×10 4 Ω-cm.
Claim 12
Dependent Claim
37 words
The method of claim 2 wherein said region comprises high resistivity InP and said carrier gas comprises nitrogen, said volatile indium compound comprises InCl, said volatile dopant compound comprises FeCl 2 , and said hydride comprises phosphine.
Claim 13
Dependent Claim
19 words
The method of claim 11 where the amount of pyrolysis of phosphine is in the range of about 17-65%.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-03-11 | 1994-09-10 | 1995-03-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-03-11 | 1998-09-10 | 1999-03-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-03-11 | 2002-09-10 | 2003-03-12 | $7700.00 | Window Closed / Lapsed |