Protection of semiconductor substrates during epitaxial growth processes

Claim 1

A liquid phase epitaxy method of fabricating a semiconductor device by growing an epitaxial layer on a compound semiconductor single crystal substrate containing a relatively volatile element, comprising the steps of: providing a solution holder having a well therein containing a first solution from which said layer is to be grown, providing a slider having a recess therein for carrying said substrate to a position under said well, providing a chamber which (1) is located external to said solution holder, (2) is adapted to permit said slider to translate therethrough, (3) is capable of surrounding said substrate, (4) has a bottom portion underneath said slider and a top portion above said slider, placing a second solution, which contains said volatile element, into said bottom portion of said chamber, moving said slider to position said substrate in said chamber heating said substrate and said solutions to a temperature suitable for growth of said layer and which causes said volatile element to evaporate from said second solution, so that the partial pressure of said volatile element in said chamber reduces thermal decomposition of said substrate, and removing said substrate from said chamber and bringing it into contact with said first solution for a time period effective to grow said layer to the desired thickness.

Claim 11

The method of claims 4, 5, 6, 7, 8 or 9 wherein said positioning step occurs at least during the time when said substrate is heated to a temperature above approximately 400 degrees C.