US4729968A
Expired / Lapsed
US
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Hydride deposition of phosporus-containing semiconductor materials avoiding hillock formation
Assignee: Nokia Bell Labs
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Filing: 1987-04-13
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Granted: 1988-03-08
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Expires: 2007-04-13
Abstract
Abstract Hillock formation in the vapor phase epitaxial hydride deposition of indium phosphide is avoided. This effect is accomplished by ensuring that the phosphine utilized in the deposition gas flow is essentially completely decomposed before reaching the deposition area. Additionally, by utilizing the phosphine decomposition procedure, advantageous results are also achieved in the epitaxial hydride deposition of phosphorus-containing semiconductor materials.
Inventors
- 👤 Robert F. Karlicek, Jr.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 08:00
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B29/00; C30B29/10; C30B29/40; H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2909; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; H10P14/36; H10P14/3602; Y; Y10; Y10S; Y10S117/00; Y10S117/918
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
71 words
A process for forming a device comprising the steps of subjecting a substrate in a hydride epitaxy process to a phosphorus-containing vapor, inducing deposition of a phosphorus-containing composition on said substrate through interaction with said vapor, and completing said device characterized in that said phosphorus is introduced from a phosphine source wherein at least 93 mole percent of said phosphorus interacting at said substrate is in a form other than phosphine.
Claim 2
Dependent Claim
71 words
A process for forming a device comprising the steps of subjecting a substrate in a hydride epitaxy process to a phosphorus-containing vapor, inducing deposition of a phosphorus-containing composition on said substrate through interaction with said vapor, and completing said device characterized in that said phosphorus is introduced from a phosphine source wherein at least 93 mole percent of said phosphorus interacting at said substrate is in a form other than phosphine.
Claim 3
Dependent Claim
15 words
The process of claim 1 wherein said phosphine is catalytically decomposed before reaching said substrate.
Claim 4
Dependent Claim
14 words
The process of claim 1 wherein said phosphorus-containing deposition comprises a III-V semiconductor material.
Claim 5
Dependent Claim
11 words
The process of claim 1 wherein said device comprises a laser.
Claim 6
Dependent Claim
15 words
The process of claim 3 wherein said phosphine is catalytically decomposed before reaching said substrate.
Claim 7
Dependent Claim
12 words
The process of claim 4 wherein said laser comprises a V-groove laser.
Claim 8
Dependent Claim
15 words
The process of claim 5 wherein said catalyst comprises a Group VI metal or tantalum.
Claim 9
Dependent Claim
21 words
The process of claim 7 wherein said composition comprises a member chosen from the group consisting of tungsten, molybdenum, and tantalum.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-03-08 | 1991-09-07 | 1992-03-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-03-08 | 1995-09-07 | 1996-03-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-03-08 | 1999-09-07 | 2000-03-08 | $7700.00 | Window Closed / Lapsed |