Patent US4996686A successfully refreshed from Google Patents.
US4996686A
Expired / Lapsed
US
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Charge transfer device with reset voltage generating circuit
Assignee: Toshiba Corp
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Filing: 1988-05-20
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Granted: 1991-02-26
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Expires: 2008-05-20
Abstract
Abstract In a charge transfer device, a voltage generating cirucit generates a voltage amounting to a potential lower by "α" (α: a predetermined potential) than a potential formed under a reset gate electrode when stored charges of a floating diffusion region are discharged into a drain region. A voltage step-up circuit steps up a predetermined voltage and supplies the stepped-up voltage as a reset voltage to the drain region. A comparison/control circuit generates an error voltage amounting to a difference between the output voltage of the voltage generating circuit and the stepped-up voltage, and controls the voltage step-up operation by the step-up circuit according to the error voltage. With the structure of the device, the stepped-up voltage from the voltage step-up circuit, which is supplied as a reset voltage to the drain region, is controlled according to the process parameter variations. The result is that the reset voltage well follows up the process parameter variations, the dynamic range of the output signal is always kept wide, and the output signal of good linearity and good S/N performance can be obtained.
Inventors
- 👤 Shin-ichi Imai
- 👤 Tatsuya Yoshie
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 11:25
CPC Classifications
G; G11; G11C; G11C27/00; G11C27/04; G11C19/00; G11C19/28; G11C19/282; G11C19/285; H; H10; H10D; H10D44/00; H10D44/40; H10D44/45; H10D44/454
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
212 words
A charge transfer device comprising: a floating diffusion region formed on a semiconductor substrate, signal charged being transferred to said floating diffusion region from a charge transfer section; a drain region for discharging unnecessary charges when receiving a reset voltage; a reset gate electrode for controlling the discharge of the stored charges of said floating diffusion region into said drain region, in accordance with a reset pulse; voltage generating means for generating a voltage having a potential which is lower by "α" volts than a potential formed under said reset gate electrode when the stored charges of said floating diffusion region are discharged into said drain region, wherein "α" is a value equal to a difference between the potential of said drain region and the potential formed under said reset gate electrode when the stored charges of said floating diffusion region are discharged into said drain region; voltage set-up means for stepping up a predetermined voltage and for supplying the stepped-up voltage as said reset voltage to said drain region; and comparison/control means for generating an error voltage equal to a difference between the output voltage of said voltage generating means and said stepped-up voltage, and for controlling the voltage step-up operation by said step-up means in accordance with said error voltage.
Claim 2
Dependent Claim
212 words
A charge transfer device comprising: a floating diffusion region formed on a semiconductor substrate, signal charged being transferred to said floating diffusion region from a charge transfer section; a drain region for discharging unnecessary charges when receiving a reset voltage; a reset gate electrode for controlling the discharge of the stored charges of said floating diffusion region into said drain region, in accordance with a reset pulse; voltage generating means for generating a voltage having a potential which is lower by "α" volts than a potential formed under said reset gate electrode when the stored charges of said floating diffusion region are discharged into said drain region, wherein "α" is a value equal to a difference between the potential of said drain region and the potential formed under said reset gate electrode when the stored charges of said floating diffusion region are discharged into said drain region; voltage set-up means for stepping up a predetermined voltage and for supplying the stepped-up voltage as said reset voltage to said drain region; and comparison/control means for generating an error voltage equal to a difference between the output voltage of said voltage generating means and said stepped-up voltage, and for controlling the voltage step-up operation by said step-up means in accordance with said error voltage.
Claim 3
Dependent Claim
134 words
A charge transfer device comprising: a floating diffusion region formed on a semiconductor substrate, signal charges being transferred to said floating diffusion region from a charge transfer section; a drain region for draining unnecessary charges when receiving a reset voltage; a reset gate electrode for controlling the discharge of the stored charges of said floating diffusion region into said drain region, in accordance with a reset pulse; reference voltage generating means for generating a reference voltage; voltage step-up means for stepping up the output voltage of said reference voltage generating means, and supplying the stepped-up voltage as said reset voltage to said drain region, said step-up voltage being relatively lower than a potential formed under said reset gate electrode when the stored charges of said floating diffusion region are discharged into said drain region.
Claim 4
Dependent Claim
134 words
A charge transfer device comprising: a floating diffusion region formed on a semiconductor substrate, signal charges being transferred to said floating diffusion region from a charge transfer section; a drain region for draining unnecessary charges when receiving a reset voltage; a reset gate electrode for controlling the discharge of the stored charges of said floating diffusion region into said drain region, in accordance with a reset pulse; reference voltage generating means for generating a reference voltage; voltage step-up means for stepping up the output voltage of said reference voltage generating means, and supplying the stepped-up voltage as said reset voltage to said drain region, said step-up voltage being relatively lower than a potential formed under said reset gate electrode when the stored charges of said floating diffusion region are discharged into said drain region.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-02-25 | 1994-08-27 | 1995-02-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-02-25 | 1998-08-27 | 1999-02-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-02-25 | 2002-08-27 | 2003-02-26 | $7700.00 | Window Closed / Lapsed |