EP0191583A1
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Charge-coupled device
Assignee: Sony Corp
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Filing: 1986-02-03
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Granted: —
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Expires: 2006-02-03
Abstract
Abstract A charge-coupled device including a semiconductor substrate (1) of given conductivity type, a buried channel (8) formed on the substrate of different conductivity type than the substrate, an electrically floating diffusion (2) formed in the substrate of different conductivity type than the substrate, and a plurality of electrodes (P 1 , P 2 , P 3 ) insulating from the buried channel. The electrodes are responsive to applied voltages for supplying a signal charge through the buried channel to the floating diffusion. The charged-coupled device also includes a transistor (11) responsive to a pulse voltage signal for periodically resetting the floating diffusion to a predetermined potential. The transistor comprises an enhancement type surface channel field effect transistor.
Inventors
- 👤 Junya C/O Sony Corporation Suzuki
- 👤 Kaneyoshi C/O Sony Corporation Takeshita
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-08 11:31
CPC Classifications
H; H10; H10D; H10D44/00; H10D44/40; H10D44/45; H10D44/454
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
116 words
A charge-coupled device comprising: a semiconductor substrate of a given conductivity type; a buried channel formed on said substrate, said buried channel being formed of a different conductivity type than said substrate; an electrically floating diffusion region formed in said substrate, said floating diffusion region being of different conductivity type than said substrate; a plurality of electrode means insulated from said buried channel, said electrode means being responsive to applied voltage for applying a signal charge through said buried channel to said floating diffusion region; and a transistor responsive to a pulse voltage signal for periodically resetting said floating diffusion region to a predetermined potential, said transistor comprising an enhancement type surface channel field effect transistor.
Claim 2
Dependent Claim
116 words
A charge-coupled device comprising: a semiconductor substrate of a given conductivity type; a buried channel formed on said substrate, said buried channel being formed of a different conductivity type than said substrate; an electrically floating diffusion region formed in said substrate, said floating diffusion region being of different conductivity type than said substrate; a plurality of electrode means insulated from said buried channel, said electrode means being responsive to applied voltage for applying a signal charge through said buried channel to said floating diffusion region; and a transistor responsive to a pulse voltage signal for periodically resetting said floating diffusion region to a predetermined potential, said transistor comprising an enhancement type surface channel field effect transistor.
Claim 3
Dependent Claim
92 words
The charge-coupled device as claimed in claim 1, wherein said enhancement type surface channel field effect transistor comprises: a source electrode including said floating diffusion region; a drain electrode including a drain diffusion region formed in said substrate, said drain diffusion region being of different conductivity type than said substrate; a gate electrode connected to a source of said pulse voltage signal; and a surface channel formed on said substrate, said surface channel being of the same conductivity type as said substrate, said surface channel extending between said source and drain electrodes.
Claim 4
Dependent Claim
32 words
The charge-coupled device as claimed in claim 2,. wherein a common voltage source is connected to provide said predetermined potential at said drain electrode and also a potential at said gate electrode.
Claim 5
Dependent Claim
160 words
In a floating diffusion amplifier of the type which comprises a plurality of transfer gate electrodes for respectively receiving clock pulse signals to transfer a signal charge through a transfer channel formed on a semiconductor substrate; an output gate connected to supply transferred charge to a floating diffusion region comprising an output circuit of the floating diffusion amplifier; a charge sensing circuit operatively connected to said floating diffusion region which includes a sensing transistor connected for sensing the voltage level of the floating diffusion region into which said signal charge is supplied; and a precharge transistor comprising the floating diffusion region, an electrode maintained at a predetermined electrical potential, and a gate electrode operatively connected to receive a series of reset pulse voltage signals to periodically turn on said precharge transistor to reset the floating diffusion region to said predetermined potential applied to said electrode, the improvement wherein the precharge transistor is an enhancement type surface channel field effect transistor.
Claim 6
Dependent Claim
160 words
In a floating diffusion amplifier of the type which comprises a plurality of transfer gate electrodes for respectively receiving clock pulse signals to transfer a signal charge through a transfer channel formed on a semiconductor substrate; an output gate connected to supply transferred charge to a floating diffusion region comprising an output circuit of the floating diffusion amplifier; a charge sensing circuit operatively connected to said floating diffusion region which includes a sensing transistor connected for sensing the voltage level of the floating diffusion region into which said signal charge is supplied; and a precharge transistor comprising the floating diffusion region, an electrode maintained at a predetermined electrical potential, and a gate electrode operatively connected to receive a series of reset pulse voltage signals to periodically turn on said precharge transistor to reset the floating diffusion region to said predetermined potential applied to said electrode, the improvement wherein the precharge transistor is an enhancement type surface channel field effect transistor.
Claim 7
Dependent Claim
60 words
The amplifier as set forth in claim 4, wherein said enhancement type surface channel field effect transistor includes a source electrode comprising the floating diffusion region , a drain electrode comprising a precharge drain diffusion region, and a gate electrode operatively connected to a source of reset voltage pulses to reset periodically the floating diffusion region to said predetermined potential.
Claim 8
Dependent Claim
53 words
The amplifier as set forth in claim 5, wherein said substrate comprises a P-type silicon substrate, said transfer channel is an N-type silicon layer on said P-type substrate, and said precharge transistor includes an N-type floating diffusion region formed as a source electrode in said substrate at one end of said transfer channel.
Claim 9
Dependent Claim
40 words
The amplifier as set forth in claim 6, wherein said precharge transistor includes a drain electrode of N-type diffusion and a P-type silicon channel extending over the P-type silicon substrate between the N-type diffusion and the precharge drain N-type diffusion.
References Cited (Backward Citations)
US4118795A
Cited
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