← Back to Patent Explorer
US4996576A Expired / Lapsed US ⏱️ 0.0 years remaining

Radiation-sensitive device

Assignee: Nokia Bell Labs
•
Filing: 1989-05-15
•
Granted: 1991-02-26
•
Expires: 2009-05-15
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract A p-channel depletion-mode MOS device is utilized for measuring low levels of ionizing radiation.

Inventors

  • 👤 William T. Lynch
  • 👤 Lalita Manchanda

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-08 15:46
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/29; H10F30/298

Claims Analysis

Total Claims: 9
Claim 1
Independent Claim 92 words
In combination, a p-channel depletion-mode MOS device adapted to be interposed in a path of non-particle ionizing radiation, and means for determining, for a given gate voltage applied to said device, the change in source-to-drain current that results from irradiation of said device with said non-particle ionizing radiation thereby to provide a measurement of the non-particle radiation dose to which said device was exposed wherein said device comprises a gate pattern including an insulating layer of said gate having a conductive gate layer thereon, said conductive gate layer comprising n + polysilicon.
Claim 2
Dependent Claim 92 words
In combination, a p-channel depletion-mode MOS device adapted to be interposed in a path of non-particle ionizing radiation, and means for determining, for a given gate voltage applied to said device, the change in source-to-drain current that results from irradiation of said device with said non-particle ionizing radiation thereby to provide a measurement of the non-particle radiation dose to which said device was exposed wherein said device comprises a gate pattern including an insulating layer of said gate having a conductive gate layer thereon, said conductive gate layer comprising n + polysilicon.
Claim 3
Dependent Claim 16 words
A combination as in claim 1 wherein said insulating layer of said gate comprises silicon dioxide.
Claim 4
Dependent Claim 15 words
A combination as in claim 1 wherein said insulting layer of said gate comprises SIPOS.
Claim 5
Dependent Claim 18 words
A combination as in claim 1 wherein said device comprises a gate pattern having a closed ring structure.
Claim 6
Independent Claim 79 words
A method of measuring non-particle ionized radiation dose, comprising the step of interposing a p-channel depletion-mode MOS device in the path of radiation whose dose is to be measured and for a given gate voltage measuring the change in drain current that occurs in said device as a result of being irradiated wherein said device comprises source and drain contacts and a gate pattern that includes an insulating layer of said gate having an n + polysilicon layer thereon.
Claim 7
Independent Claim 79 words
A method of measuring non-particle ionized radiation dose, comprising the step of interposing a p-channel depletion-mode MOS device in the path of radiation whose dose is to be measured and for a given gate voltage measuring the change in drain current that occurs in said device as a result of being irradiated wherein said device comprises source and drain contacts and a gate pattern that includes an insulating layer of said gate having an n + polysilicon layer thereon.
Claim 8
Dependent Claim 42 words
A method as in claim 5, wherein during the time that said device is exposed to radiation, an external positive bias voltage is connected to said n + polysilicon layer and an external negative bias voltage is applied to said drain contact.
Claim 9
Dependent Claim 26 words
A method as in claim 5 wherein during the time that said device is exposed to radiation, no external bias voltages are applied to said device.

References Cited (Backward Citations)

US3673471A Cited
US3886584A Cited
US3803461A Cited
US3882530A Cited
US4176372A Cited
US4012762A Cited
US4163240A Cited
US4273805A Cited
US4213045A Cited
US4605946A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1994-02-25 1994-08-27 1995-02-26 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1998-02-25 1998-08-27 1999-02-26 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2002-02-25 2002-08-27 2003-02-26 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag