US3886584A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Radiation hardened mis devices
Assignee: Harris Corp
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Filing: 1973-01-30
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Granted: 1975-05-27
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Expires: 1993-01-30
Abstract
Abstract An insulated gate field effect transistor is characterized by heavily doped source and drain regions separated by a channel in the surface layer of a silicon body. Above the silicon surface of the channel lies a metal layer constituting a gate electrode. The gate electrode is separated from a passivating layer immediately overlying the channel surface, by an open space having a width much greater than the thickness of the passivating layer. The open space is defined by the thickness of a layer of material formerly interposed between the metal layer and the passivating layer but subsequently removed during the fabrication of the field transistor.
Inventors
- 👤 Jr Koy B Cook
- 👤 Jimmy L Davidson
- 👤 Joseph D Gibson
- 👤 Iii Raymond B Patterson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 14:41
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/685; H10D64/20; H10D64/27; H10D64/311; H10D64/411; H10D64/511; H10D99/00; H10D64/691; H10D64/693; Y; Y10; Y10S; Y10S257/00; Y10S257/906
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
129 words
An insulated-gate field-effect transistor, comprising a silicon body having a preselected conductivity type and having a major planar surface, a pair of spaced-apart source and drain regions of opposite conductivity type from said preselected conductivity type, extending into said silicon body from said major surface thereof and defining a channel for charge carriers therebetween closely adjacent said major planar surface, and a gate electrode overlying said channel and separated from said major planar surface thereat at least in part by a gap, said gate electrode being of generally rectangular shape with long sides and relatively shorter ends, said gate electrode being supported along both of said long sides, said gap remaining of substantially fixed width during operation of said transistor and contributing to the radiation hardening of said transistor.
Claim 2
Dependent Claim
129 words
An insulated-gate field-effect transistor, comprising a silicon body having a preselected conductivity type and having a major planar surface, a pair of spaced-apart source and drain regions of opposite conductivity type from said preselected conductivity type, extending into said silicon body from said major surface thereof and defining a channel for charge carriers therebetween closely adjacent said major planar surface, and a gate electrode overlying said channel and separated from said major planar surface thereat at least in part by a gap, said gate electrode being of generally rectangular shape with long sides and relatively shorter ends, said gate electrode being supported along both of said long sides, said gap remaining of substantially fixed width during operation of said transistor and contributing to the radiation hardening of said transistor.
Claim 3
Dependent Claim
36 words
The invention according to claim 1, wherein is further included an insulating layer overlying and in intimate contact with said major surface at said channel, said gap existing between said insulating layer and said gate electrode.
Claim 4
Dependent Claim
19 words
The invention according to claim 2, Wherein said gap is much wider than the thickness of said insulating layer.
Claim 5
Dependent Claim
13 words
The invention according to claim 3, wherein said gap is approximately 500A wide.
Claim 6
Dependent Claim
12 words
The invention according to claim 3, wherein said insulating layer is Al2O3.
Claim 7
Dependent Claim
13 words
The invention according to claim 3, wherein said gap is a partial vacuum.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-05-26 | 1978-11-25 | 1979-05-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-05-26 | 1982-11-25 | 1983-05-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-05-26 | 1986-11-25 | 1987-05-27 | $7700.00 | Window Closed / Lapsed |