US3570112A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Radiation hardening of insulated gate field effect transistors
Assignee: Department of National Defence
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Filing: 1967-12-01
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Granted: 1971-03-16
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Expires: 1987-12-01
Abstract
Abstract A METAL-OXIDE-SEMICONDUCTOR FIELD EFFECT DEVICE IS RENDERED LESS SENSITIVE TO IONIZING RADIATION BY SUBJECTING THE DEVICE TO IONIZING RADIATION AT A POSITIVE GATE BIAS SEVERAL TIMES LARGER THAN THE NORMAL OPERATING BIAS VOLTAGE OF THE DEVICE, AND THEN PARTIALLY TEMPERATURE ANNEALING THE DEVICE.
Inventors
- 👤 Albert L Barry
- 👤 Donald F Page
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 00:40
CPC Classifications
H; H10; H10D; H10D99/00; H10D48/00; H10D48/30; H10D48/32; H10D48/36; H10P; H10P95/00; Y; Y10; Y10S; Y10S257/00; Y10S257/925; Y10S438/00; Y10S438/953
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-03-15 | 1974-09-14 | 1975-03-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-03-15 | 1978-09-14 | 1979-03-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-03-15 | 1982-09-14 | 1983-03-16 | $7700.00 | Window Closed / Lapsed |