Magnetic-field-sensing field-effect transistor
Abstract
Abstract A MEGNETIC-FIELD-SENSING DEVICE IS CONSTRUCTED BY SUSPENDING AN ELECTRICALLY CONDUCTIVE BAR,THAT HAS AT LEAST ONE MAGNETIC REGION, ABOVE THE CHANNEL BETWEEN THE SOURCE AND THE DRAIN OF A METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR (MOS). THE SUSPENDED BAR ACTS AS THE GATE ELECTRODE AND IS CONNECTED TO A D.C. BIAS VOLTAGE SUPPLY. THE SUSPENDED BAR CAN BE MADE BY OVERLAYING MAGNETIC MATERIAL ON A SUITABLE ELECTRICAL CONDUCTOR, OR IT CAN BE CONSTRUCTED ENTIRELY OF AN E LECTRICALLY CONDUCTIVE MAGNETIC MATERIAL, WHICH MAY BE A HIGH-RESISTANCE MATERIAL IF DESIRED. A MAGNETIC FIELD IN THE VICINITY OF THE SUSPENDED BAR CAUSES MECHANICAL DISPLACEMENT OF THE SUSPENDED BAR, THEREBY ALTERING THE ELECTROSTATIC FIELD IN THE VICINITY OF THE CHANNEL REGION. THE ALTERED ELECTROSTATIC FIELD AFFECTS THE INVERSION LAYER WITHIN THE CHANNEL, CAUSING A CHANGE IN CONDUCTIVITY, THUS PRODUCING A CHANGE IN THE SOURCE-TO-DRAIN CURRENT AS A FUNCTION OF THE MAGNETIC FIELD.
Inventors
- 👤 William H Puterbaugh Jr
Bibliographic Details
Claims Analysis
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-01-04 | 1974-07-06 | 1975-01-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-01-04 | 1978-07-06 | 1979-01-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-01-04 | 1982-07-06 | 1983-01-05 | $7700.00 | Window Closed / Lapsed |