Abstract A method for fabrication of semiconductor device in which a tungsten film only exists on contact hole which is comprising the steps of depositing a insulator layer on the silicon substrate being doped by impurity, depositing a photoresist high temperature resistant resin on the insulator layer in order to form a contact hole, forming a contact hole by etching the insulator layer using the photoresist resin as a mask, selectively depositing tungsten film on the contact hole and removing the photoresist layer, and a method for fabrication of semiconductor device which is comprising the steps of depositing the first photoresist resin layer followed by depositing the second photoresist resin layer on the insulator layer forming a pattern to the first and the second photoresist resin layer, forming a contact hole by etching the insulator layer, selectively depositing tungsten film on the contact hole after removing the second photoresist resin layer and removing the first photoresist resin layer.
A method for the fabrication of a semiconductor device comprising the steps of doping of impurity on a substrate to form an impurity doped region on said substrate, depositing an insulator layer on said substrate, depositing a photoresist resin on said insulator layer in order to form a contact hole, said contact hole being formed by etching the insulator layer using the photoresist resin as a mask, selectively depositing a tungsten film in said contact hole so that the tungsten film is located only inside said contact hole, and removing the photoresist resin after selectively depositing the tungsten film in said contact hole to simultaneously remove tungsten residue deposited on the photoresist resin so that tungsten film is deposited only inside said contact hole.
Claim 2
Independent Claim
124 words
A method for the fabrication of a semiconductor device comprising the steps of doping of impurity on a substrate to form an impurity doped region on said substrate, depositing an insulator layer on said substrate, depositing a photoresist resin on said insulator layer in order to form a contact hole, said contact hole being formed by etching the insulator layer using the photoresist resin as a mask, selectively depositing a tungsten film in said contact hole so that the tungsten film is located only inside said contact hole, and removing the photoresist resin after selectively depositing the tungsten film in said contact hole to simultaneously remove tungsten residue deposited on the photoresist resin so that tungsten film is deposited only inside said contact hole.
Claim 3
Dependent Claim
90 words
A method according to claim 1, further comprising depositing a second photoresist resin on said insulator layer consecutively to the first said photoresist resin, forming a pattern to said second photoresist resin by etching said second photoresist resin in a photoetching process, forming a pattern to the first said photoresist resin using said second photoresist resin as a mask, removing said second photoresist resin prior to said contact hole being formed, and removing the first said photoresist resin so that the tungsten film is deposited only inside said contact hole.
Claim 4
Dependent Claim
28 words
A method according to claim 2, wherein said second photoresist resin comprises a positive photoresist, and the first said photoresist resin comprises high temperature resistant polyimide or PMGI.
Claim 5
Dependent Claim
37 words
A method according to claim 2, wherein the pattern is formed to the first said and second photoresist resins by RIE dry etching of the first said photoresist resin and wet etching of said second photoresist resin.