US4988631A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making a photoelectric conversion device
Assignee: Toshiba TEC Corp
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Filing: 1990-04-25
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Granted: 1991-01-29
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Expires: 2010-04-25
Abstract
Abstract The present invention, in a photoelectric conversion device including a sensor portion and a thin film transistor portion for the purpose of switching disposed on the same substrate, is manufactured by, first, forming gate electrodes for a thin film transistor portion on the surface of the substrate by a thin film technique, and then, depositing an insulating film, an a-Si film, and electrodes on the insulating substrate so as to be laminated to one after another and commonly covering the sensor portion and the thin film transistor portion, whereby the sensor portion and the thin film transistor portion are enabled to be provided in one series of processing while the device is put in a vacuum chamber.
Inventors
- 👤 Minoru Ogawa
- 👤 Koichiro Sakamoto
- 👤 Toshiyuki Tamura
- 👤 Kazushige Katsuumi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 08:19
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/191; H10F39/18
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
93 words
A method for manufacturing a photoelectric conversion device comprising the steps of: forming gate electrodes for a thin film transistor portion on the surface of an insulating substrate by a thin film technique; depositing an insulating film on said substrate and said gate electrodes; depositing on said insulating film an a-Si film for said thin film transistor portion and a sensor portion so as to be commonly laminated thereto; and depositing on said a-Si film electrodes for said sensor potion and said thin film transistor portion so as to be commonly laminated thereto.
Claim 2
Independent Claim
93 words
A method for manufacturing a photoelectric conversion device comprising the steps of: forming gate electrodes for a thin film transistor portion on the surface of an insulating substrate by a thin film technique; depositing an insulating film on said substrate and said gate electrodes; depositing on said insulating film an a-Si film for said thin film transistor portion and a sensor portion so as to be commonly laminated thereto; and depositing on said a-Si film electrodes for said sensor potion and said thin film transistor portion so as to be commonly laminated thereto.
Claim 3
Dependent Claim
70 words
A method for manufacturing a photoelectric conversion device according to claim 1, wherein an n + a-Si film and an electrode material for forming electrodes are provided by turns so as to be laminated to said a-Si film, then said electrode material is partly removed with portions for said electrodes left intact, and then said n + a-Si film is likewise removed partly with portions for said electrodes left intact.
Claim 4
Independent Claim
119 words
A method for manufacturing a photoelectric conversion device comprising the steps of: forming gate electrodes for a thin film transistor portion on the surface of an insulating substrate by a thin film technique; depositing an insulating film on said substrate and said gate electrodes; depositing on said insulating film an a-Si film for said thin film transistor portion and a sensor portion so as to be commonly laminated thereto; and removing said a-Si film partly with the portions required for said sensor portion and said thin film transistor portion left intact; and depositing on said a-Si film electrodes for said sensor portion and said thin film transistor portion and said insulating film so as to be commonly laminated thereto.
Claim 5
Independent Claim
119 words
A method for manufacturing a photoelectric conversion device comprising the steps of: forming gate electrodes for a thin film transistor portion on the surface of an insulating substrate by a thin film technique; depositing an insulating film on said substrate and said gate electrodes; depositing on said insulating film an a-Si film for said thin film transistor portion and a sensor portion so as to be commonly laminated thereto; and removing said a-Si film partly with the portions required for said sensor portion and said thin film transistor portion left intact; and depositing on said a-Si film electrodes for said sensor portion and said thin film transistor portion and said insulating film so as to be commonly laminated thereto.
Claim 6
Independent Claim
105 words
A method for manufacturing a photoelectric conversion device comprising the steps of: simultaneously forming gate electrodes for a thin film transistor portion and a reflecting film for a sensor portion on the surface of an insulating substrate by a thin film technique; depositing an insulating film on said substrate, said gate electrodes, and said reflecting film; depositing on said insulating film an a-Si film for said thin film transistor portion and said sensor portion so as to be commonly laminated thereto; and depositing on said a-Si film electrodes for said sensor portion and said thin film transistor portion so as to be commonly laminated thereto.
Claim 7
Independent Claim
105 words
A method for manufacturing a photoelectric conversion device comprising the steps of: simultaneously forming gate electrodes for a thin film transistor portion and a reflecting film for a sensor portion on the surface of an insulating substrate by a thin film technique; depositing an insulating film on said substrate, said gate electrodes, and said reflecting film; depositing on said insulating film an a-Si film for said thin film transistor portion and said sensor portion so as to be commonly laminated thereto; and depositing on said a-Si film electrodes for said sensor portion and said thin film transistor portion so as to be commonly laminated thereto.
Claim 8
Independent Claim
153 words
A method for manufacturing a photoelectric conversion device comprising the steps of: commonly forming, by a thin film technique, a wiring pattern under a matrix and a gate wiring pattern including gate electrodes for a thin film transistor portion as its portion on the surface of an insulating substrate; depositing an insulating film on said substrate, wiring pattern under the matrix, and said gate wiring pattern; making through holes in said insulating film for communicating with said wiring pattern under the matrix or said gate wiring pattern at predetermined positions; depositing on said insulating film an a-Si film for said thin film transistor portion and a sensor portion so as to be commonly laminated thereto; and depositing on said a-Si film and said insulating film electrodes for said sensor portion and said thin film transistor portion so as to be commonly laminated thereto, of which specified ones are led through said through holes.
Claim 9
Independent Claim
153 words
A method for manufacturing a photoelectric conversion device comprising the steps of: commonly forming, by a thin film technique, a wiring pattern under a matrix and a gate wiring pattern including gate electrodes for a thin film transistor portion as its portion on the surface of an insulating substrate; depositing an insulating film on said substrate, wiring pattern under the matrix, and said gate wiring pattern; making through holes in said insulating film for communicating with said wiring pattern under the matrix or said gate wiring pattern at predetermined positions; depositing on said insulating film an a-Si film for said thin film transistor portion and a sensor portion so as to be commonly laminated thereto; and depositing on said a-Si film and said insulating film electrodes for said sensor portion and said thin film transistor portion so as to be commonly laminated thereto, of which specified ones are led through said through holes.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-01-28 | 1994-07-30 | 1995-01-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-01-28 | 1998-07-30 | 1999-01-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-01-28 | 2002-07-30 | 2003-01-29 | $7700.00 | Window Closed / Lapsed |