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US4985342A
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Polysiloxane pattern-forming material with SiO4/2 units and pattern formation method using same
Assignee: DuPont Toray Specialty Materials KK
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Filing: 1988-11-07
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Granted: 1991-01-15
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Expires: 2008-11-07
Abstract
Abstract Pattern-forming material useful in producing highly accurate submicron patterns having unusually high aspect ratios at superior resolutions are obtained by using a solvent-soluble polyorganosiloxane having SiO 4/2 units and at least one other organosiloxane unit which contains a high energy radiation sensitive group. The polyorganosiloxane has a softening temperature greater than room temperature.
Inventors
- 👤 Naohiro Muramoto
- 👤 Katsutoshi Mine
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 14:08
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/038; G03F7/075; G03F7/0757
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
144 words
A pattern-forming material consisting essentially of a solvent-soluble polyorganosiloxane having 10 to 90 mole % SiO 4/2 units and other organosiloxane units selected from the group consisting of R 1 SiO 3/2 , R 2 R 3 SiO 2/2 , and R 4 R 5 R 6 SiO 1/2 to make up the total constituent siloxane units, in the general formulae of the organosiloxane units, R 1 through R 6 are each a group selected from the group consisting of hydrogen, hydroxyl, and monovalent organic group, said polyorganosiloxane has a softening temperature greater than room temperature, and contains in each molecule at least one group sensitive to high-energy radiation selected from the group consisting of hydrogen bonded to silicon, alkyl groups having at least 2 carbon atoms, halogenated hydrocarbon groups, alkenyl groups, 3-acryloxypropyl, acryloxymethyl, 3-methacryloxypropyl, 3-acrylamidopropyl, 3-mercaptopropyl, 3-glycidoxypropyl, 2-(3,4-epoxycyclohexyl)ethyl, 3-aminopropyl, 3-(2-aminoethyl)aminopropyl, 2-(p-azidobenzoyl)ethyl, and 3-(p-azido-m-methylbenzoyl)propyl.
Claim 2
Dependent Claim
144 words
A pattern-forming material consisting essentially of a solvent-soluble polyorganosiloxane having 10 to 90 mole % SiO 4/2 units and other organosiloxane units selected from the group consisting of R 1 SiO 3/2 , R 2 R 3 SiO 2/2 , and R 4 R 5 R 6 SiO 1/2 to make up the total constituent siloxane units, in the general formulae of the organosiloxane units, R 1 through R 6 are each a group selected from the group consisting of hydrogen, hydroxyl, and monovalent organic group, said polyorganosiloxane has a softening temperature greater than room temperature, and contains in each molecule at least one group sensitive to high-energy radiation selected from the group consisting of hydrogen bonded to silicon, alkyl groups having at least 2 carbon atoms, halogenated hydrocarbon groups, alkenyl groups, 3-acryloxypropyl, acryloxymethyl, 3-methacryloxypropyl, 3-acrylamidopropyl, 3-mercaptopropyl, 3-glycidoxypropyl, 2-(3,4-epoxycyclohexyl)ethyl, 3-aminopropyl, 3-(2-aminoethyl)aminopropyl, 2-(p-azidobenzoyl)ethyl, and 3-(p-azido-m-methylbenzoyl)propyl.
Claim 3
Dependent Claim
18 words
The pattern-forming material according to claim 1 in which the polyorganosiloxane contains 10 to 45 weight % Si.
Claim 4
Dependent Claim
21 words
The pattern-forming material according to claim 1 in which the softening temperature of the polyorganosiloxane is at least 100 degrees Centigrade.
Claim 5
Dependent Claim
81 words
The pattern-forming material according to claim 3 in which the SiO 4/2 units are present in an amount of from 45 to 65 mol % and the other organosiloxane units are present in an amount of from 35 to 55 mol %, the polyorganosiloxane contains from 30 to 45 weight % Si, and the other organosiloxane units consist essentially of from 0 to 35 mol % trimethylsiloxy units and from 4 to 45 mol % organosiloxane units with high-energy sensitive groups.
Claim 6
Dependent Claim
31 words
The pattern-forming material according to claim 4 in which the organosiloxane units with high-energy sensitive groups (monochloromethyl)dimethylsiloxy units and are present in an amount of from 4 to 30 mol %.
Claim 7
Dependent Claim
34 words
The pattern-forming material according to claim 4 in which the organosiloxane units with high-energy sensitive groups are from 10 to 15 mol % (monochloromethyl)dimethylsiloxy units and from 15 to 20 mol % vinyldimethylsiloxy units.
Claim 8
Dependent Claim
40 words
The pattern-forming material according to claim 4 in which the organosiloxane units with high-energy sensitive groups are from 10 to 45 mol % siloxane units selected from the group consisting of vinyldimethylsiloxy unit, methylvinyl-siloxane unit, vinylsilsesquioxane unit' and mixtures thereof.
Claim 9
Dependent Claim
34 words
The pattern-forming material according to claim 4 in which the organosiloxane units with high-energy sensitive groups are from 10 to 15 mol % vinyldimethylsiloxy units and from 10 to 15 mol % (isopropyl)dimethylsiloxy units.
Claim 10
Dependent Claim
30 words
The pattern-forming material according to claim 4 in which the organosiloxane units with high-energy sensitive groups are from 10 to 15 mol % p--ClCH.sub.2 C.sub.6 H.sub.4 CH.sub.2 CH.sub.2 SiO.sub.3/2 unit.
Claim 11
Dependent Claim
25 words
The pattern-forming material according to claim 4 in which the organosiloxane units with high-energy sensitive groups are from 15 to 25 mol % gamma-mercaptopropylsilsesquioxane unit.
Claim 12
Dependent Claim
36 words
The pattern-forming material according to claim 4 in which the organosiloxane units with high-energy sensitive groups are from 10 to 30 mol % siloxane units selected from the group consisting of gamma-methacryloxypropylsilsesquioxane unit and (acryloxymethyl)dimethylsiloxy unit
Claim 13
Dependent Claim
25 words
The pattern-forming material according to claim 4 in which the organosiloxane units with high-energy sensitive groups are from 5 to 10 mol % hydrogendimethylsiloxy unit.
Claim 14
Dependent Claim
25 words
The pattern-forming material according to claim 4 in which the organosiloxane units with high-energy sensitive groups are from 5 to 10 mol % ##STR18## unit.
Claim 15
Dependent Claim
25 words
The pattern-forming material according to claim 4 in which the organosiloxane units with high-energy sensitive groups are from 10 to 25 mol % (isopropyl)dimethylsiloxy unit.
Claim 16
Dependent Claim
25 words
The pattern-forming material according to claim 4 in which the organosiloxane units with high-energy sensitive groups are from 5 to 10 mol % (tertiary-butyl)dimethylsiloxy unit.
Claim 17
Dependent Claim
59 words
A method for the formation of a pattern on a substrate comprising forming on a substrate a film of the pattern-forming material according to claim 1, then selectively rendering areas of this film insoluble to a liquid developer by selectively exposing the film to high-energy radiation, and thereafter removing the film in the unexposed areas using the liquid developer.
Claim 18
Dependent Claim
94 words
A method for the formation of a pattern on a substrate comprising forming a layer of an organic polymer on the substrate, placing over the organic polymer a layer of the pattern-forming material of claim 1, insolubilizing the pattern-forming material by exposure to high-energy radiation in a desired pattern, forming a pattern on the organic polymer layer by removal of the unexposed regions using liquid developer, and, using this pattern as a mask, the regions of said organic polymer layer not covered with said polyorganosiloxane are removed by dry etching with the oxygen ion.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1994-01-14 | 1994-07-16 | 1995-01-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-01-14 | 1998-07-16 | 1999-01-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-01-14 | 2002-07-16 | 2003-01-15 | $7700.00 | Window Closed / Lapsed |