Patent US4983546A successfully refreshed from Google Patents.
US4983546A
Expired / Lapsed
US
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Method for curing spin-on-glass film by utilizing ultraviolet irradiation
Assignee: SK Hynix Inc
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Filing: 1989-12-20
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Granted: 1991-01-08
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Expires: 2009-12-20
Abstract
Abstract A method for curing spin-on-glass formed on a wafer film which insulates the metal layers and flattens any step difference in the process for manufacturing a multi-layered metal layer of a highly integrated semiconductor device which comprises establishing a predetermined initial temperature in a heating chamber with an ultraviolet light source. A wafer, on which a SOG film to be cured is formed, is then introdued into the heated chamber and the temperature gradually increased to a predetermined maximum temperature. The SOG film is irradiated with ultraviolet light at a predetermined wavelength simultaneously with the application of heat at the maximum temperature for a predetermined time. The wafer is then cooled.
Inventors
- 👤 Il S. Hyun
- 👤 Hae S. Park
- 👤 Chung G. Choi
- 👤 Ho G. Ryoo
- 👤 Jai O. Koh
- 👤 Sang I. Kim
- 👤 Sung K. Park
- 👤 Yung M. Koo
- 👤 Young I. Kim
- 👤 Sea C. Kim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 23:11
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/093; H10W20/095; H10P; H10P95/00; H10P95/08; H10P95/06; H10P95/062; H10P95/064; H10W20/074; H10W20/098
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
113 words
A method for curing SOG a spin-on-glass formed on a wafer film which is formed in order to insulate the metal layers from each other and to flatten the step difference in the process for manufacturing a multilayered metal layer of a highly integrated semiconductor device comprising: establishing in a heating chamber which includes an ultraviolet light source a predetermined initial temperature; introducing a wafer, on which a SOG film to be cured is formed, into the heated chamber and increasing the temperature gradually to a predetermined maximum temperature; irradiating the SOG film with ultraviolet light at a predetermined wavelength while maintaining the maximum temperature for a predetermined time; and cooling the wafer.
Claim 2
Independent Claim
113 words
A method for curing SOG a spin-on-glass formed on a wafer film which is formed in order to insulate the metal layers from each other and to flatten the step difference in the process for manufacturing a multilayered metal layer of a highly integrated semiconductor device comprising: establishing in a heating chamber which includes an ultraviolet light source a predetermined initial temperature; introducing a wafer, on which a SOG film to be cured is formed, into the heated chamber and increasing the temperature gradually to a predetermined maximum temperature; irradiating the SOG film with ultraviolet light at a predetermined wavelength while maintaining the maximum temperature for a predetermined time; and cooling the wafer.
Claim 3
Dependent Claim
18 words
The method of claim 1 wherein the predetermined maximum temperature in the chamber is set to 200° C.
Claim 4
Dependent Claim
35 words
The method of claim 1 wherein the predetermined initial temperature is gradually increased to the predetermined maximum temperature by gradually increasing the temperature from 200° C., to 240° C. over a period of 30 seconds.
Claim 5
Dependent Claim
27 words
The method of claim 1 wherein the predetermined maximum temperature is 240° C., the predetermined duration of time is 120 seconds and the predetermined wavelength is 300nm.
Claim 6
Dependent Claim
20 words
The method of claim 1 wherein the wafer is cooled in the chamber to a final temperature of 130° C.
Claim 7
Independent Claim
144 words
A method for curing SOG a spin-on-glass formed on a wafer film which is formed in order to insulate the metal layers from each other and to flatten the step difference in the process for manufacturing a multi-layered metal layer of a highly integrated semiconductor device comprising: establishing in a heating chamber which includes an ultraviolet light source a predetermined initial temperature of 200° C.; introducing a wafer, on which a SOG film to be cured is formed, into the heated chamber and increasing the temperature gradually over a period of 30 seconds to a predetermined maximum temperature of 240° C.; irradiating the SOG film with ultraviolet light at a predetermined wavelength of 300 nm while maintaining the maximum temperature at 240° C. for a predetermined time of 120 seconds; and cooling the wafer to a final temperature in the chamber of 130° C.
Claim 8
Independent Claim
144 words
A method for curing SOG a spin-on-glass formed on a wafer film which is formed in order to insulate the metal layers from each other and to flatten the step difference in the process for manufacturing a multi-layered metal layer of a highly integrated semiconductor device comprising: establishing in a heating chamber which includes an ultraviolet light source a predetermined initial temperature of 200° C.; introducing a wafer, on which a SOG film to be cured is formed, into the heated chamber and increasing the temperature gradually over a period of 30 seconds to a predetermined maximum temperature of 240° C.; irradiating the SOG film with ultraviolet light at a predetermined wavelength of 300 nm while maintaining the maximum temperature at 240° C. for a predetermined time of 120 seconds; and cooling the wafer to a final temperature in the chamber of 130° C.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-01-07 | 1994-07-09 | 1995-01-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-01-07 | 1998-07-09 | 1999-01-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-01-07 | 2002-07-09 | 2003-01-08 | $7700.00 | Window Closed / Lapsed |