Patent US4983543A successfully refreshed from Google Patents.
US4983543A
Expired / Lapsed
US
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Method of manufacturing a semiconductor integrated circuit having an interconnection wire embedded in a protective layer covering the semiconductor integrated circuit
Assignee: Fujitsu Ltd
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Filing: 1989-09-01
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Granted: 1991-01-08
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Expires: 2009-09-01
Abstract
Abstract A method of manufacturing a semiconductor integrated circuit comprises steps of forming at least one semiconductor device on a substrate, depositing an insulator layer on the substrate so as to bury the semiconductor device, providing a contact hole through the insulator layer for exposing a desired part of the semiconductor device, filling the contact hole by a refractory metal for electrical connection, covering the insulator layer by a second insulator layer, forming a groove through the second insulator layer according to a predetermined interconnection pattern such that the groove passes at least one contact hole and such that a top surface of the refractory metal filling the contact hole and a top surface of the first insulator layer are exposed by the groove, forming a material layer acting as nuclei for crystal growth of a second refractory metal at a bottom of the groove substantially continuously along the groove, and depositing the second refractory metal in the groove until the groove is substantially filled by a conductor of the second refractory metal.
Inventors
- 👤 Yasuhisa Sato
- 👤 Takushi Motoyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 07:04
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/412; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/6922; H10P14/6923; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/042; H10W20/045; H10W20/056; H10W20/057
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
218 words
A method of manufacturing a semiconductor integrated circuit, comprising steps of: forming at least one semiconductor device on a substrate; depositing an insulator layer on the substrate so as to bury said semiconductor device; providing a contact hole through the insulator layer for exposing a desired part of the semiconductor device; filling the contact hole by a refractory metal for electrical connection; covering the insulator layer by a second insulator layer; forming a groove through the second insulator layer according to a predetermined interconnection pattern such that the groove passes at least one contact hole and such that a top surface of the refractory metal filling the contact hole and a top surface of the first insulator layer are exposed by the groove; forming a material layer acting as a nuclei for crystal growth of a second refractory metal at a bottom of the groove substantially continuously along the groove, said step of forming the material layer acting as nuclei comprising consecutive steps of depositing a first material forming said material layer such that a side wall and the bottom of the groove are covered, and selectively removing the first material from the side wall; and depositing the second refractory metal in the groove until the groove is substantially filled by a conductor of the second refractory metal.
Claim 2
Independent Claim
218 words
A method of manufacturing a semiconductor integrated circuit, comprising steps of: forming at least one semiconductor device on a substrate; depositing an insulator layer on the substrate so as to bury said semiconductor device; providing a contact hole through the insulator layer for exposing a desired part of the semiconductor device; filling the contact hole by a refractory metal for electrical connection; covering the insulator layer by a second insulator layer; forming a groove through the second insulator layer according to a predetermined interconnection pattern such that the groove passes at least one contact hole and such that a top surface of the refractory metal filling the contact hole and a top surface of the first insulator layer are exposed by the groove; forming a material layer acting as a nuclei for crystal growth of a second refractory metal at a bottom of the groove substantially continuously along the groove, said step of forming the material layer acting as nuclei comprising consecutive steps of depositing a first material forming said material layer such that a side wall and the bottom of the groove are covered, and selectively removing the first material from the side wall; and depositing the second refractory metal in the groove until the groove is substantially filled by a conductor of the second refractory metal.
Claim 3
Dependent Claim
18 words
A method as claimed in claim 1 in which said first and second insulator layers comprise phosphosilicate glass.
Claim 4
Dependent Claim
17 words
A method as claimed in claim 1 in which said first and second insulator layers comprise silica.
Claim 5
Dependent Claim
26 words
A method as claimed in claim 1 in which said first and second refractory metals are chosen from a group comprising tungsten, molybdenum, titanium and tantalum.
Claim 6
Dependent Claim
98 words
A method as claimed in claim 1 further comprising, after the step of forming the groove and before the step of forming the material acting as nuclei, a step of covering the side wall of the groove by a second material capable of forming a compound when reacted with said first material, and another step of reacting the first material with the second material to form a compound layer covering the side wall of the groove, said step of selectively removing the first material from the side wall comprises a selective removal of the compound layer by etching.
Claim 7
Dependent Claim
92 words
A method as claimed in claim 5 in which said step of covering the side wall of the groove by the second material further comprises consecutive steps of depositing the second material on the second insulator layer including the groove after the step of forming the groove to cover a top of the second insulator layer, the side wall of the groove and the bottom of the groove, and removing the second material selectively from the top of the second insulator layer and from the bottom of the groove by anisotropic etching.
Claim 8
Dependent Claim
164 words
A method as claimed in claim 6 further comprising a step of depositing the second material directly on the second insulator layer before the step of forming the groove to form a second material layer, said step of removing the second material being performed so as to cause exposure of the second material layer thus provided directly on the second insulator layer, said step of depositing the first material causing deposition of the first material not only on the side wall and the bottom of the groove but also on the second material layer thus exposed, said step of reacting the first material with the second material further causing formation of the compound at the top of the second insulator layer as a result of reaction between said first and second materials, and said step of selectively removing the first material further causing removal of the compound from the top of the second insulator layer leaving the top of the second insulator layer exposed.
Claim 9
Dependent Claim
29 words
A method as claimed in claim 5 in which said first material comprises silicon and said second material comprises a material capable of forming silicide when reacted with silicon.
Claim 10
Dependent Claim
26 words
A method as claimed in claim 8 in which said second material is chosen from a group comprising titanium, tungsten, tantalum, molybdenum, cobalt, zirconium and hafnium.
Claim 11
Dependent Claim
32 words
A method as claimed in claim 5 in which said first material is chosen from a group comprising titanium, tungsten, tantalum, molybdenum, cobalt, zirconium and hafnium, and said second material comprises silicon.
Claim 12
Dependent Claim
53 words
A method as claimed in claim 1 in which said step of selectively removing the first material further comprises steps of selectively covering the material layer at the bottom of the groove by a mask, removing a part of the material layer not covered by the mask by etching, and removing the mask.
Claim 13
Dependent Claim
71 words
A method as claimed in claim 11 in which said step of selectively covering the material layer further comprises steps of providing the mask uniformly on the first material after the step of depositing the first material, filling the groove by an organic substance, removing a part of the mask covering the side wall by etching using the organic substance as another mask, and removing the organic substance from the groove.
Claim 14
Dependent Claim
27 words
A method as claimed in claim 12 in which said first material comprises silicon and said mask comprises silica formed by thermal oxidation of the first material.
Claim 15
Dependent Claim
103 words
A method as claimed in claim 1 further comprising a step of depositing silicon nitride on the first insulator layer after the step of filling the contact hole to form a silicon nitride layer covering a top of the first insulator layer, said step of forming the groove being performed such that the silicon nitride layer is exposed from a side wall of the groove at a bottom part of the groove adjacent to said bottom, and said step of forming the material layer comprises deposition of said second refractory metal on the silicon nitride layer exposed at the bottom of the groove.
References Cited (Backward Citations)
US4283439A
Cited
US4617193A
Cited
US4582563A
Cited
US4584207A
Cited
JPS61139026A
Cited
JPS62141740A
Cited
US4746621A
Cited
US4764484A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-01-07 | 1994-07-09 | 1995-01-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-01-07 | 1998-07-09 | 1999-01-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-01-07 | 2002-07-09 | 2003-01-08 | $7700.00 | Window Closed / Lapsed |