Patent US2576138A successfully refreshed from Google Patents.
Patent US4980198A successfully refreshed from Google Patents.
US4980198A
Expired / Lapsed
US
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Laser CVD and plasma CVD of CrO2 films and cobalt doped CrO2 films using organometallic precursors
Assignee: Syracuse University
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Filing: 1989-11-30
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Granted: 1990-12-25
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Expires: 2009-11-30
Abstract
Abstract Chromium dioxide is deposited as a ferromagnetic layer onto selected portions of a substrate or over the entire substrate. Chromium hexacarbonyl vapor is introduced into a vacuum deposition chamber at e.g. 10 milliTorr and oxygen is introduced at e.g. 15 to 100 milliTorr. A UV laser beam is focused onto the substrate to form the CrO 2 layer photolytically. The CrO 2 layer can also be deposited by RF plasma deposition. This technique can also be employed for depositing MoC 2 , WC 2 , Mo 2 φ 3 , MoO 2 or WO 2 . Magnetic recording or memory devices are produced without the high failure rate typical of the prior art sputtering technique.
Inventors
- 👤 Peter A. Dowben
- 👤 Marshall Onellion
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 02:21
CPC Classifications
G; G11; G11B; G11B5/00; G11B5/62; G11B5/64; G11B5/65; G11B5/658; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/405; G11B11/00; G11B11/10; G11B11/105; G11B11/10582; G11B11/10586; G11B5/84; G11B5/85; H; H01; H01F; H01F41/00; H01F41/14; H01F41/22
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
135 words
Process for depositing on a substrate a film of a magnetic oxide by decomposition of an organometallic precursor selected from the group consisting of Group VIB metal hexacarbonyls, chromacene and benzene chromium, the process comprising placing the substrate into a vacuum deposition chamber; introducing said organometallic precursor into said chamber as a vapor under a suitable pressure; introducing into the chamber an oxidizing agent as a vapor selected from the group consisting of O 2 , O 3 and NO under a suitable pressure greater than the pressure of said organometallic precursor vapor; maintaining the temperature of the substrate at a predetermined level to facilitate deposition onto a surface of said substrate; and applying UV or RF electromagnetic energy in said chamber to decompose the organometallic material and deposit the film of the magnetic oxide.
Claim 2
Dependent Claim
135 words
Process for depositing on a substrate a film of a magnetic oxide by decomposition of an organometallic precursor selected from the group consisting of Group VIB metal hexacarbonyls, chromacene and benzene chromium, the process comprising placing the substrate into a vacuum deposition chamber; introducing said organometallic precursor into said chamber as a vapor under a suitable pressure; introducing into the chamber an oxidizing agent as a vapor selected from the group consisting of O 2 , O 3 and NO under a suitable pressure greater than the pressure of said organometallic precursor vapor; maintaining the temperature of the substrate at a predetermined level to facilitate deposition onto a surface of said substrate; and applying UV or RF electromagnetic energy in said chamber to decompose the organometallic material and deposit the film of the magnetic oxide.
Claim 3
Dependent Claim
131 words
Process for depositing on a substrate a film of a metal oxide by laser-assisted chemical vapor deposition employing an organometallic precursor selected from the group that consists of Group VIB metal hexacarbonyls, chromacene, and benzene chromium the process comprising placing the substrate into a vacuum deposition chamber, introducing into the chamber said organometallic precursor as a vapor under suitable pressure; introducing into the chamber an oxidizing agent as a vapor under a suitable pressure greater than the pressure of said organometallic precursor vapor; maintaining the temperature of the substrate at a temperature below 350 K, and photolytically decomposing the organometallic precursor by focusing onto a predetermined portion of said substrate a laser beam whose wavelength is in the ultraviolet range, to produce said film on said predetermined portion of said substrate.
Claim 4
Dependent Claim
131 words
Process for depositing on a substrate a film of a metal oxide by laser-assisted chemical vapor deposition employing an organometallic precursor selected from the group that consists of Group VIB metal hexacarbonyls, chromacene, and benzene chromium the process comprising placing the substrate into a vacuum deposition chamber, introducing into the chamber said organometallic precursor as a vapor under suitable pressure; introducing into the chamber an oxidizing agent as a vapor under a suitable pressure greater than the pressure of said organometallic precursor vapor; maintaining the temperature of the substrate at a temperature below 350 K, and photolytically decomposing the organometallic precursor by focusing onto a predetermined portion of said substrate a laser beam whose wavelength is in the ultraviolet range, to produce said film on said predetermined portion of said substrate.
Claim 5
Dependent Claim
13 words
Process according to claim 2 wherein said oxidizing agent is O 2 .
Claim 6
Dependent Claim
11 words
Process according to claim 2 wherein said oxidizing agent is NO.
Claim 7
Dependent Claim
41 words
Process according to claim 2 wherein said organometallic precursor is chromium hexacarbonyl introduced at a pressure of substantially 10 milliTorr, and said oxidizing agent is introduced at a pressure of at least 15 milliTorr to produce a film of chromium dioxide.
Claim 8
Dependent Claim
18 words
Process according to claim 5 wherein said substrate temperature is maintained between about 288 K and 294 K.
Claim 9
Dependent Claim
18 words
Process according to claim 5 whrein said laser beam wavelength is between about 230 nm and 337 nm.
Claim 10
Dependent Claim
21 words
Process according to claim 2, further comprising introducing cobaltecene vapor into the chamber to add cobalt as dopant to said film.
Claim 11
Dependent Claim
128 words
Process for depositing on a substrate a film of a Group VIB metal dioxide by decomposition of an organometallic precursor selected from type VIB metal hexacarbonyls, chromacene, and benzene chromium the process comprising placing the substrate into a plasma deposition chamber, introducing into the chamber said organometallic material as a vapor under a suitable pressure; introducing into said chamber an oxidizing agent as a vapor under a suitable pressure greater than the pressure of said organometallic precursor vapor; maintaining the temperature of the substrate at substantially 423-573 K and applying RF radiation to the chamber to create a plasma of said organometallic precursor vapor and said oxidizing agent vapor to decompose said organometallic precursor and form said Group VIB metal dioxide film on a surface of said substrate.
Claim 12
Dependent Claim
128 words
Process for depositing on a substrate a film of a Group VIB metal dioxide by decomposition of an organometallic precursor selected from type VIB metal hexacarbonyls, chromacene, and benzene chromium the process comprising placing the substrate into a plasma deposition chamber, introducing into the chamber said organometallic material as a vapor under a suitable pressure; introducing into said chamber an oxidizing agent as a vapor under a suitable pressure greater than the pressure of said organometallic precursor vapor; maintaining the temperature of the substrate at substantially 423-573 K and applying RF radiation to the chamber to create a plasma of said organometallic precursor vapor and said oxidizing agent vapor to decompose said organometallic precursor and form said Group VIB metal dioxide film on a surface of said substrate.
Claim 13
Dependent Claim
13 words
Process according to claim 9 wherein said oxidizing agent is O 2 .
Claim 14
Dependent Claim
11 words
Process according to claim 9 wherein said oxidizing agent is NO.
Claim 15
Dependent Claim
41 words
Process according to claim 9 wherein said organometallic precursor is chromium hexacarbonyl introduced at a pressure of about 10 milliTorr, and said oxidizing agent is introduced at a pressure of at least 15 milliTorr to produce a film of chromium dioxide.
Claim 16
Dependent Claim
20 words
Process according to claim 9 wherein said RF radiation is applied at a frequency of substantially 10 to 20 MHz.
Claim 17
Dependent Claim
24 words
Process according to claim 9 further comprising introducing cobaltecene vapor into the chamber to add cobalt as a dopant to said metal dioxide film.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-12-24 | 1994-06-25 | 1994-12-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-12-24 | 1998-06-25 | 1998-12-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-12-24 | 2002-06-25 | 2002-12-25 | $7700.00 | Window Closed / Lapsed |