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US4978418A Expired / Lapsed US ⏱️ 0.0 years remaining

Controlled ion implant damage profile for etching

Assignee: United States Department of Energy
•
Filing: 1988-08-18
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Granted: 1990-12-18
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Expires: 2008-08-18
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Abstract

Abstract A process for etching a material such as LiNbO 3 by implanting ions having a plurality of different kinetic energies in an area to be etched, and then contacting the ion implanted area with an etchant. The various energies of the ions are selected to produce implant damage substantially uniformly throughout the entire depth of the zone to be etched, thus tailoring the vertical profile of the damaged zone.

Inventors

  • 👤 George W. Arnold, Jr.
  • 👤 Carol I. H. Ashby
  • 👤 Paul J. Brannon

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-06 12:14
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; C; C04; C04B; C04B41/00; C04B41/0027; C04B41/80; C23; C23F; C23F1/00; C23F1/02; G; G02; G02B; G02B6/00; G02B6/10; G02B6/12; G02B6/13; G02B6/134; G02B6/1347

Claims Analysis

Total Claims: 10
Claim 1
Independent Claim 60 words
A process for etching a pattern on the surface of a substrate, comprising: irradiating said substrate stepwise in said pattern with ions having a plurality of ion energies to provide substantially uniform damage to said material throughout the depth of the ion-implanted material; and, after the irradiating is completed, contacting the ion-implanted substrate with an etchant for etching said pattern.
Claim 2
Dependent Claim 60 words
A process for etching a pattern on the surface of a substrate, comprising: irradiating said substrate stepwise in said pattern with ions having a plurality of ion energies to provide substantially uniform damage to said material throughout the depth of the ion-implanted material; and, after the irradiating is completed, contacting the ion-implanted substrate with an etchant for etching said pattern.
Claim 3
Dependent Claim 17 words
A process in accordance with claim 1 wherein said substrate to be etched comprises an electro-optic material.
Claim 4
Dependent Claim 14 words
A process in accordance with claim 1 wherein said substrate is LiNbO 3 .
Claim 5
Dependent Claim 42 words
A process in accordance with claim 1 wherein said ions are implanted in a plurality of steps and wherein said ions incident on said surface have average energy levels which are different from each other in at least two of said steps.
Claim 6
Dependent Claim 44 words
A process in accordance with claim 4 wherein in at least one of said steps the ions incident on said surface have an energy level which is at least twice the energy level of ions incident on said surface in another of said steps.
Claim 7
Dependent Claim 48 words
A process in accordance with claim 4 wherein the average energy level of the ions in the step having the highest energy level ions is from about 2 to about 6 times the average energy level of the ions in the step having the lowest energy level ions.
Claim 8
Dependent Claim 27 words
A process in accordance with claim 4 wherein there are at least three steps wherein the average ion energies of the ions are different from each other.
Claim 9
Dependent Claim 43 words
A process for etching a LiNbO 3 substrate, comprising the steps of irradiating stepwise an area on said substrate to be etched with ions having several different energies, and then, after the irradiating is completed, contacting the irradiated area with an etching solution.
Claim 10
Dependent Claim 43 words
A process for etching a LiNbO 3 substrate, comprising the steps of irradiating stepwise an area on said substrate to be etched with ions having several different energies, and then, after the irradiating is completed, contacting the irradiated area with an etching solution.

References Cited (Backward Citations)

US3852134A Cited
US3808068A Cited
US4094677A Cited
US4147564A Cited
US4268347A Cited
US4325182A Cited
US4416724A Cited
US4450041A Cited
US4514251A Cited
US4584055A Cited
US4598039A Cited
US4634494A Cited
US4652334A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1993-12-17 1994-06-18 1994-12-18 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1997-12-17 1998-06-18 1998-12-18 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2001-12-17 2002-06-18 2002-12-18 $7700.00 Window Closed / Lapsed

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