Abstract Low reflectivity surfaces are formed by particle track etching of a dielectric material such that the horizontal scale of surface texture is less than the wavelength of incident radiation and the depth of texture is equal to or greater than said wavelength. As a consequence, the reflection coefficient is thereby reduced by a factor of at least two, and light is more efficiently transmitted into the material. For solar cells encapsulated in transparent material, efficiency of absorption of solar radiation may be improved by at least about two times per etched surface, or to less than about 2% for the air/transparent material interface and to less than about 15% for the transparent material/solar cell interface.
A process for forming a surface having a low reflectivity to incident radiation in a wavelength region whose lower and upper bounds are defined by λ min about equal to 0.1 micron and λ max about equal to 2.0 microns respectively, which comprises (a) bombarding a dielectric material with high energy particles, thereby generating damage tracks, and (b) etching said damage tracks to form cavities of average depth D and average spacing S such that λ min is greater than about 10S and λ max is less than about 6D whereby incident radiation transits a gradient change in dielectric constant, substantially reducing the reflectivity of said surface.
Claim 2
Dependent Claim
107 words
A process for forming a surface having a low reflectivity to incident radiation in a wavelength region whose lower and upper bounds are defined by λ min about equal to 0.1 micron and λ max about equal to 2.0 microns respectively, which comprises (a) bombarding a dielectric material with high energy particles, thereby generating damage tracks, and (b) etching said damage tracks to form cavities of average depth D and average spacing S such that λ min is greater than about 10S and λ max is less than about 6D whereby incident radiation transits a gradient change in dielectric constant, substantially reducing the reflectivity of said surface.
Claim 3
Dependent Claim
21 words
The process of claim 1 in which the ratio of depth to spacing of the cavities is at least about 7.
Claim 4
Dependent Claim
30 words
The process of claim 1 in which the surface is bombarded with high energy particles having a particle density ranging from about 1×10 10 to 4×10 12 cm -2 .
Claim 5
Dependent Claim
14 words
The process of claim 1 in which the dielectric material comprises an oxide glass.
Claim 6
Dependent Claim
12 words
The process of claim 4 in which the dielectric material comprises silica.
Claim 7
Dependent Claim
13 words
The process of claim 4 in which the dielectric material comprises a plastic.
Claim 8
Dependent Claim
12 words
The process of claim 6 in which the plastic is highly cross-linked.