US4969030A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Integrated structure for a signal transfer network, in particular for a pilot circuit for MOS power transistors
Assignee: STMicroelectronics SRL
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Filing: 1990-04-03
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Granted: 1990-11-06
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Expires: 2010-04-03
Abstract
Abstract The integrated structure is formed of various circuital components accomplished by diffusion of dopants in a semiconductor substrate. Each component is located inside a respective insulation recess electrically floating in relation to the substrate and the other components.
Inventors
- 👤 Salvatore Musumeci
- 👤 Roberto Pellicano
- 👤 Sergio Palara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 15:36
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/40; H10D84/401; H10D84/60; H10D84/611; H10D84/613; H10W; H10W10/00; H10W10/01; H10W10/031; H10W10/30
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
178 words
Integrated structure for a signal transfer network, comprising: a semiconductor substrate having component portions and a remaining portion; a plurality of circuit components formed by diffusion of dopant material in said component portions of said semiconductor substrate, including adjacent first and second components; and a plurality of electrically floating portions corresponding to said plurality of circuit components and formed by diffusion of dopant material in said semiconductor substrate, each circuit component being electrically isolated from the remaining portions of said semiconductor substrate by corresponding ones of said electrically floating portions and being electrically isolated from every other circuit component by said corresponding ones of said electrically floating portions, whereby the total capacitance between adjacent first and second components having corresponding first and second electrically floating portions is approximately the series connections of the capacitances between the first component and the first electrically floating portion, the first electrically floating portion and the remaining portion of the substrate, the remaining portion of the substrate and the second electrically floating portion, and the second electrically floating portion and the second component.
Claim 2
Dependent Claim
178 words
Integrated structure for a signal transfer network, comprising: a semiconductor substrate having component portions and a remaining portion; a plurality of circuit components formed by diffusion of dopant material in said component portions of said semiconductor substrate, including adjacent first and second components; and a plurality of electrically floating portions corresponding to said plurality of circuit components and formed by diffusion of dopant material in said semiconductor substrate, each circuit component being electrically isolated from the remaining portions of said semiconductor substrate by corresponding ones of said electrically floating portions and being electrically isolated from every other circuit component by said corresponding ones of said electrically floating portions, whereby the total capacitance between adjacent first and second components having corresponding first and second electrically floating portions is approximately the series connections of the capacitances between the first component and the first electrically floating portion, the first electrically floating portion and the remaining portion of the substrate, the remaining portion of the substrate and the second electrically floating portion, and the second electrically floating portion and the second component.
Claim 3
Dependent Claim
17 words
Integrated structure in accordance with claim 1 wherein at least one of said components is a diode.
Claim 4
Dependent Claim
47 words
Integrated structure in accordance with claim 2 wherein said diode comprises a buried doped layer of a first type provided with sinker regions constituting one of the terminals of the diode, and an area with doping of a second type constituting the other terminal of the diode.
Claim 5
Dependent Claim
35 words
Integrated structure in accordance with claim 2 wherein said diode comprises an area with doping of a first type and an area with doping of a second type, constituting the two terminals of the diode.
Claim 6
Dependent Claim
17 words
Integrated structure in accordance with claim 1 wherein at least one of said components is a condenser.
Claim 7
Dependent Claim
62 words
Integrated structure in accordance with claim 5 wherein said condenser comprises a doped buried layer, an intermediate layer with doping of the same type as the buried layer and a surface area with doping of the same type as the buried layer, the latter constituting a plate of the condenser and another plate consisting of a surface metallization on the dielectric layer.
Claim 8
Dependent Claim
17 words
Integrated structure in accordance with claim 1 wherein at least one of said components comprises a resistor.
Claim 9
Dependent Claim
70 words
Integrated structure in accordance with claim 7 wherein said resistor comprises a buried layer with doping of a first type different from that of the corresponding electrically floating portion, an intermediate layer with doping of the first type forming a further electrically floating portion arranged inside said corresponding electrically floating portion and at least one surface area with doping of a second type arranged inside said further electrically floating portion.
Claim 10
Dependent Claim
19 words
Integrated structure in accordance with claim 1 wherein at least one of said components consists of a bipolar transistor.
Claim 11
Dependent Claim
80 words
Integrated structure in accordance with claim 9 wherein said bipolar transistor comprises a buried layer with doping of a firs type, an intermediate area with doping of the first type, a first surface area with doping of the first type, a second surface area with doping of the first type and a third surface area with doping of a second type, said first, second and third surface areas constituting respectively the collector, emitter and base terminals of the bipolar transistor.
Claim 12
Dependent Claim
18 words
Integrated structure in accordance with claim 1 wherein at least one of said components comprises a MOS transistor.
Claim 13
Dependent Claim
113 words
Integrated structure in accordance with claim 11 wherein said MOS transistor comprises a buried layer with doping of the first type, an intermediate area with doping of the first type, a first surface are with doping of the first type, a second surface area with doping of the first type, a third surface area with doping of the second type and a strip of conducting material overlaid on said second and third surface areas, said first surface area constituting the drain terminal of the transistor, said second and third surface areas forming in combination the source terminal of the transistor and said strip of conducting material constituting the gate terminal of the transistor.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-11-05 | 1994-05-07 | 1994-11-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-11-05 | 1998-05-07 | 1998-11-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-11-05 | 2002-05-07 | 2002-11-06 | $7700.00 | Window Closed / Lapsed |