Semiconductor device

Abstract

Abstract In an integrated circuit which has a power transistor and a control transistor formed separated by an isolation region on a semiconductor substrate, a buried p-type layer (3) is formed directly on the semiconductor substrate(1), and a buried n-type layer (4) is formed on the layer (3). A high resistance n-type layer (13) is then formed by an epitaxial , growth method over the whole surface, a p-type isolation diffused region (6) connected to the p-type layer (3) and an n-type isolation diffused layer (7) connected to the n-type layer (4) are formed, a control transistor or a resistor is formed in the isolated n-type epitaxial layer, and a power transistor is formed in the epitaxial layer which is not isolated.

Inventors

• 👤 Shiro C/O Mitsubishi Denki K. K. Iwatani

Bibliographic Details