Semiconductor device

Claim 2

An integrated semiconductor device comprising: a semiconductor substrate of a first conductivity type; a first region of a second conductivity type and of a low impurity concentration, the first region having a first concentration and being formed in the substrate; a second region of the first conductivity type, the second region having a second concentration and being formed in the substrate in contact with the first region, the second concentration being greater than the first concentration, positive and negative voltages being applied to the first and second regions to apply a reverse bias to the junction between the first and second regions to electrically separate the first and second regions; a planar type MOS-IC formed in the first region; and a vertical type DMOS transistor formed in the second region, the substrate and a part of the second region connected thereto constituting a drain region of the DMOS transistor, the DMOS transistor including source regions on an opposite surface to the substrate, the MOS-IC including source and drain regions on the same surface as that of the source regions of the DMOS transistor.

Claim 3

The device of claim 1, wherein the MOS-IC comprises a CMOS transistor including a buried region of the second conductivity type, formed between the first region and the substrate, the buried region having a higher impurity concentration than the first region.

Claim 4

The device of claim 2, wherein the CMOS transistor includes a PMOS transistor portion and a NMOS transistor portion, the PMOS transistor portion including a third region of the first conductivity type in the first region, the source and drain regions being included in the third region.

Claim 5

The device of claim 3, wherein the DMOS transistor includes fourth regions of the second conductivity type in the second region, and the two source regions included in each of the fourth regions.

Claim 6

An integrated semiconductor device comprising: a semiconductor substrate of a first conductivity type; a first region of a second conductivity type and of a low impurity concentration, the first region having a first concentration and being formed in the substrate; a second region of the first conductivity type, the second region having a second concentration and being formed in the substrate in contact with the first region, the second concentration being greater than the first concentration, positive and negative voltages being applied to the first and second regions to apply a reverse bias to the junction between the first and second regions to electrically separate the first and second regions; a planar type MOS-IC formed in the first region; a vertical type DMOS transistor formed in the second region; and a buried region of the second conductivity type, formed on the first region apart from the substrate, the buried region having a higher impurity concentration than that of the first region, the substrate and a part of the second region connected thereto constituting a drain region of the DMOS transistor, the DMOS transistor including source regions on an opposite surface to the substrate, the MOS-IC including source and drain regions on the same surface as that of the source regions of the DMOS transistor.

Claim 7

An integrated semiconductor device comprising: a semiconductor substrate of a first conductivity type; a first region of a second conductivity type and of a low impurity concentration, the first region having a first concentration and being formed in the substrate; a second region of the first conductivity type, the second region having a second concentration and being formed in the substrate in contact with the first region, the second concentration being greater than the first concentration, positive and negative voltages being applied to the first and second regions to apply a reverse bias to the junction between the first and second regions to electrically separate the first and second regions; a planar type MOS-IC formed in the first region; a vertical type DMOS transistor formed in the second region; and a buried region of the second conductivity type, formed on the first region apart from the substrate, the buried region having a higher impurity concentration than that of the first region, the substrate and a part of the second region connected thereto constituting a drain region of the DMOS transistor, the DMOS transistor including source regions on an opposite surface to the substrate, the MOS-IC including source and drain regions on the same surface as that of the source regions of the DMOS transistor.

Claim 8

The device of claim 5, wherein the CMOS transistor includes a PMOS transistor portion and a NMOS transistor portion, the PMOS transistor portion including a third region of the first conductivity type in the first region and the source and drain regions being included in the third region.

Claim 9

The device of claim 6, wherein the DMOS transistor includes fourth regions of the second conductivity type in the second region, and the two source regions are included in each fourth regions.

Claim 10

An integrated semiconductor device comprising: a semiconductor substrate of a first conductivity type; a first region of a second conductivity type and of a low impurity concentration, the first region having a first concentration and being formed in the substrate; a second region of the first conductivity type, the second region having a second concentration and being formed in the substrate in contact with the first region, the second concentration being greater than the first concentration, positive and negative voltages being applied to the first and second regions to apply a reverse bias to the junction between the first and second regions to electrically separate the first and second regions; a planar type MOS-IC formed in the first region; a vertical type DMOS transistor formed in the second region; a first buried region of the second conductivity type, formed between the first region and the substrate, the buried region having a higher impurity concentration than that of the first region; and a second buried region of the first conductivity type, formed between the second region and the substrate in contact with fourth regions of the second conductivity type, formed in the second region, to form a Zener diode in the DMOS transistor, a substrate and a part of the second region connected thereto constituting a drain region of the DMOS transistor, the DMOS transistor including source regions formed in the fourth regions on an opposite surface to the substrate, the MOS-IC including source and drain regions on the same surface as that of the source regions of the DMOS transistor.

Claim 11

An integrated semiconductor device comprising: a semiconductor substrate of a first conductivity type; a first region of a second conductivity type and of a low impurity concentration, the first region having a first concentration and being formed in the substrate; a second region of the first conductivity type, the second region having a second concentration and being formed in the substrate in contact with the first region, the second concentration being greater than the first concentration, positive and negative voltages being applied to the first and second regions to apply a reverse bias to the junction between the first and second regions to electrically separate the first and second regions; a planar type MOS-IC formed in the first region; a vertical type DMOS transistor formed in the second region; a first buried region of the second conductivity type, formed between the first region and the substrate, the buried region having a higher impurity concentration than that of the first region; and a second buried region of the first conductivity type, formed between the second region and the substrate in contact with fourth regions of the second conductivity type, formed in the second region, to form a Zener diode in the DMOS transistor, a substrate and a part of the second region connected thereto constituting a drain region of the DMOS transistor, the DMOS transistor including source regions formed in the fourth regions on an opposite surface to the substrate, the MOS-IC including source and drain regions on the same surface as that of the source regions of the DMOS transistor.

Claim 12

The device of claim 8, wherein the DMOS transistor includes a PMOS transistor portion and a NMOS transistor portion, the PMOS transistor portion including a third region of the first conductivity type in the first region, the source and drain regions being included in the third region.