Patent US4967249A successfully refreshed from Google Patents.
US4967249A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Gain compression photodetector array
Assignee: BAE Systems Information and Electronic Systems Integration Inc
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Filing: 1989-03-17
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Granted: 1990-10-30
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Expires: 2009-03-17
Abstract
Abstract An improved gain compression device is disclosed, especially for use in charge-coupled devices. The device is preferably constructed on a semiconductor substrate and includes a first potential well in close proximity to a mobile charge packet generation region. A second potential well is separated from the generation region by a diffusion region. The first potential well becomes saturated and drains to a drain region while the second potential well continues to fill.
Inventors
- 👤 Paul P. Suni
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 00:53
CPC Classifications
H; H10; H10D; H10D44/00; H10D44/40; H10D44/45; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/153
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
99 words
A semiconductor device comprising: (a) a mobile charge packet generation region; (b) a first potential well adjacent said mobile charge packet generation region, said first potential well having a first potential barrier and a second potential barrier, said first potential barrier greater than said second potential barrier; (c) a drain region adjacent said second potential barrier; and (d) a plurality of gain wells adjacent said first potential barrier and connected to said generation region by a diffusion region, whereby a gain control curve for said semiconductor device includes a break corresponding to saturation of each of said gain wells.
Claim 2
Dependent Claim
99 words
A semiconductor device comprising: (a) a mobile charge packet generation region; (b) a first potential well adjacent said mobile charge packet generation region, said first potential well having a first potential barrier and a second potential barrier, said first potential barrier greater than said second potential barrier; (c) a drain region adjacent said second potential barrier; and (d) a plurality of gain wells adjacent said first potential barrier and connected to said generation region by a diffusion region, whereby a gain control curve for said semiconductor device includes a break corresponding to saturation of each of said gain wells.
Claim 3
Dependent Claim
14 words
Apparatus as recited in claim 1 wherein said generation region is a semiconductor substrate.
Claim 4
Dependent Claim
20 words
Apparatus as recited in claim 2, wherein said potential wells are created by electrodes on a surface of said substrate.
Claim 5
Dependent Claim
15 words
Apparatus as recited in claim 1 wherein said generation region is a photoelectron generation region.
Claim 6
Dependent Claim
18 words
Apparatus as recited in claim 1 further comprising a transfer region for removing charge from said potential wells.
Claim 7
Dependent Claim
23 words
Apparatus as recited in claim 1 wherein said diffusion region creates a low probability that mobile charge carriers will reach said gain well.
Claim 8
Dependent Claim
22 words
Apparatus as recited in claim 1, wherein there is a high probability that mobile charge carrier will reach said first potential well.
Claim 9
Dependent Claim
116 words
A semiconductor device comprising: (a) a mobile charge packet generation region; (b) a first potential well adjacent said mobile charge packet generation region, said first potential well having a first potential barrier and a second potential barrier, said first potential barrier greater than said second potential barrier; (c) a drain region adjacent said second potential barrier; (d) a gain well adjacent said first potential barrier; and (e) said first potential barrier further comprising: (i) a diffusion area adjacent said first potential well; and (ii) a diffusion barrier between said diffusion area and said second potential well, said diffusion area adapted to receive a portion of said mobile charges and return them to said first potential well.
Claim 10
Dependent Claim
116 words
A semiconductor device comprising: (a) a mobile charge packet generation region; (b) a first potential well adjacent said mobile charge packet generation region, said first potential well having a first potential barrier and a second potential barrier, said first potential barrier greater than said second potential barrier; (c) a drain region adjacent said second potential barrier; (d) a gain well adjacent said first potential barrier; and (e) said first potential barrier further comprising: (i) a diffusion area adjacent said first potential well; and (ii) a diffusion barrier between said diffusion area and said second potential well, said diffusion area adapted to receive a portion of said mobile charges and return them to said first potential well.
Claim 11
Dependent Claim
108 words
A semiconductor device comprising: (a) a mobile charge packet generation region; (b) a first potential well adjacent said mobile charge packet generation region, said first potential well having a first potential barrier and a second potential barrier, said first potential barrier greater than said second potential barrier; (c) a drain region adjacent said second potential barrier; (d) a gain well adjacent said first potential barrier and connected to said generation region by a diffusion region; and (e) wherein a portion of charge collected in the first potential well is in the range from 10 to 1,000,000 times more than a portion of charge collected in said gain well.
Claim 12
Dependent Claim
108 words
A semiconductor device comprising: (a) a mobile charge packet generation region; (b) a first potential well adjacent said mobile charge packet generation region, said first potential well having a first potential barrier and a second potential barrier, said first potential barrier greater than said second potential barrier; (c) a drain region adjacent said second potential barrier; (d) a gain well adjacent said first potential barrier and connected to said generation region by a diffusion region; and (e) wherein a portion of charge collected in the first potential well is in the range from 10 to 1,000,000 times more than a portion of charge collected in said gain well.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-10-29 | 1994-04-30 | 1994-10-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-10-29 | 1998-04-30 | 1998-10-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-10-29 | 2002-04-30 | 2002-10-30 | $7700.00 | Window Closed / Lapsed |