Solid states image sensor array having circuit for suppressing image blooming and smear

Claim 1

A solid-state image sensor comprising: a plurality of photoelectric transducer elements arranged in a matrix array consisting of m columns and n rows, for storing charge corresponding to a light image impinging thereon; first charge transfer means comprising metal-insulator-semiconductor vertical shift resister means and switching means for transferring the light image charge stored in said photoelectric transducer elements to corresponding vertical transmission lines; second charge transfer means for transferring the charge transferred from said transducer elements to said vertical transmission lines, to corresponding charge-coupled horizontal shift register means; first storage capacitor means having a capacitance lower than that of said vertical transmission lines; means for applying a first pulse voltage to one electrode of said first storage capacitor means, the other electrode thereof serving as a storage means; first transfer gate means responsive to a second pulse voltage for effecting charge transfer between said storage means and said vertical transmission lines; second transfer gate means responsive to a third pulse voltage for effecting charge transfer from said storage means to said horizontal shift register means; third charge transfer means interposed between said first storage capacitor means and said second charge transfer gate means and comprising a second storage capacitor means; means for applying a voltage to one electrode of said second storage capacitor means, the other electrode thereof serving as storage means; fourth transfer gate means and drain means adjacent said second storage means, for discharging the charge therein except for said light signal charge; and fourth charge transfer means coupled to said fourth transfer gate means for discharging the charge except said light signal charge to one electrode of a corresponding one of each of said vertical transmission lines.