Patent US4965212A successfully refreshed from Google Patents.
US4965212A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Optical sensor
Assignee: Microsemi Semiconductor ULC
•
Filing: 1989-07-31
•
Granted: 1990-10-23
•
Expires: 2009-07-31
Abstract
Abstract A photosensitive diode element and method of manufacture. The diode element is comprised of a first layer of n-type hydrogenated amorphous-silicon forming a cathode, and a second layer of p+ type material forming an anode, the second layer overlying the first layer and being transparent to optical energy. As a result of using hydrogenated amorphous-silicon, the photosensitive diode element according to the present invention has characteristics of high photoconductivity, controllably variable optical gap, and thin film structure. A photosensitive diode array formed from the subject diode elements is easily fabricated, employs straightforward circuitry for addressing each diode element, and is characterized by low crosstalk between elements, maximized optical sensitivity and broad dynamic range.
Inventors
- 👤 Metin Aktik
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 06:37
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/221; H10F30/227; H10F39/00; H10F39/10; H10F39/12; H10F39/191
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
132 words
A method of fabricating a photosensitive diode element, comprising the steps of: (a) depositing and etching a first conductive layer over an insulating substrate, (b) depositing over said first conductive layer and said substrate, and etching, a layer of n-type hydrogenated amorphous silicon to form a cathode portion of said diode element, (c) implanting p+ material into predetermined portions of said n-type layer, the predetermined portions being sufficiently thin to allow optical energy to pass therethrough, to form an anode portion of said diode element, (d) depositing a further conductive layer, and etching said further conductive layer for connection to said p+ implanted portions along an edge of and over said p+ implanted portions, and (e) forming connections from said first and further conductive layers to external cathode and anode contacts, respectively.
Claim 2
Independent Claim
132 words
A method of fabricating a photosensitive diode element, comprising the steps of: (a) depositing and etching a first conductive layer over an insulating substrate, (b) depositing over said first conductive layer and said substrate, and etching, a layer of n-type hydrogenated amorphous silicon to form a cathode portion of said diode element, (c) implanting p+ material into predetermined portions of said n-type layer, the predetermined portions being sufficiently thin to allow optical energy to pass therethrough, to form an anode portion of said diode element, (d) depositing a further conductive layer, and etching said further conductive layer for connection to said p+ implanted portions along an edge of and over said p+ implanted portions, and (e) forming connections from said first and further conductive layers to external cathode and anode contacts, respectively.
Claim 3
Dependent Claim
68 words
A method as defined in claim 1, in which the step of etching the first conductive layer restricts it to a path along the edge of the diode element, and further comprising the step of depositing and etching a layer of n+ polysilicon on said substrate prior to depositing said first conductive layer, thereby forming an ohmic content between said first conductive layer and said n-type silicon layer.
Claim 4
Independent Claim
143 words
A method of fabricating a photosensitive diode element, comprising the steps of: (a) depositing and etching a first conductive layer over an insulating substrate, (b) depositing over said first conductive layer and said substrate, and etching, a layer of n-type hydrogenated amorphous silicon to form a cathode portion of said diode element, (c) depositing a layer of metal over said n-type layer, the layer of metal being sufficiently thin to allow optical energy to pass therethrough, to form an anode portion of said diode element and a Schottky barrier with the n-type hydrogenated amorphous silicon layer. (d) depositing a further conductive layer, and etching said further conductive layer for connection to said layer of metal along an edge of and over said layer of metal, and (e) forming connections from said first and further conductive layers to external cathode and anode contacts, respectively.
Claim 5
Independent Claim
143 words
A method of fabricating a photosensitive diode element, comprising the steps of: (a) depositing and etching a first conductive layer over an insulating substrate, (b) depositing over said first conductive layer and said substrate, and etching, a layer of n-type hydrogenated amorphous silicon to form a cathode portion of said diode element, (c) depositing a layer of metal over said n-type layer, the layer of metal being sufficiently thin to allow optical energy to pass therethrough, to form an anode portion of said diode element and a Schottky barrier with the n-type hydrogenated amorphous silicon layer. (d) depositing a further conductive layer, and etching said further conductive layer for connection to said layer of metal along an edge of and over said layer of metal, and (e) forming connections from said first and further conductive layers to external cathode and anode contacts, respectively.
Claim 6
Dependent Claim
47 words
A method as defined in claim 1, including the further step, prior to said forming connections, of depositing a layer of pyroglass over exposed portions of previously deposited layers, and connecting said external cathode and anode contacts through said pyroglass to said first and further conductive layers.
Claim 7
Dependent Claim
48 words
A method as defined in claim 2, including the further step, prior to said forming connections, of depositing a layer of pyroglass over exposed portions of previously deposited layers, and connecting said external cathode and anode contacts through said pyroglass to said first conductive and further conductive layers.
Claim 8
Dependent Claim
48 words
A method as defined in claim 3, including the further step, prior to said forming connections, of depositing a layer of pyroglass over exposed portions of previously deposited layers, and connecting said external cathode and anode contacts through said pyroglass to said first conductive and further conductive layers.
Claim 9
Dependent Claim
48 words
A method as defined in claim 1, including the further step, prior to said forming connections, of depositing a transparent passivating layer over exposed portions of previously deposited layers, and connecting said external cathode and anode contacts through said passivating layer to said first and further conductive layers.
Claim 10
Dependent Claim
48 words
A method as defined in claim 2, including the further step, prior to said forming connections, of depositing a passivating layer over exposed portions of previously deposited layers, and connecting said external cathode and anode contacts through said passivating layer to said first conductive and further conductive layers.
Claim 11
Dependent Claim
48 words
A method as defined in claim 3, including the further step, prior to said forming connections, of depositing a passivating layer over exposed portions of previously deposited layers, and connecting said external cathode and anode contacts through said passivating layer to said first conductive and further conductive layers.
References Cited (Backward Citations)
US3604987A
Cited
US3902066A
Cited
US4485389A
Cited
US4246043A
Cited
US4517733A
Cited
US4633031A
Cited
US4698495A
Cited
US4724323A
Cited
US4894700A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-10-22 | 1994-04-23 | 1994-10-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-10-22 | 1998-04-23 | 1998-10-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-10-22 | 2002-04-23 | 2002-10-23 | $7700.00 | Window Closed / Lapsed |