US4963523A
Expired / Lapsed
US
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High-Tc superconducting unit having low contact surface resistivity and method of making.
Assignee: United States Department of Commerce
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Filing: 1987-11-06
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Granted: 1990-10-16
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Expires: 2007-11-06
Abstract
Abstract A low resistivity contact to a high-Tc superconductor is made by forming a contact pad on the surface of an abraded or freshly prepared superconductor by depositing an inert metal on the surface so that a surface resistivity between the surface of the high-Tc superconductor and the pad is established of less than about 1000μΩ-cm 2 at high-Tc superconductor operating temperatures.
Inventors
- 👤 John W. Ekin
- 👤 Armand J. Panson
- 👤 Betty A. Blankenship
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 06:24
CPC Classifications
H; H10; H10N; H10N60/00; H10N60/01; H10N60/0268; H10N60/0744; H10N60/0296; H10N60/0408; H10N60/0661; H10N60/0688; Y; Y10; Y10S; Y10S505/00; Y10S505/70; Y10S505/706
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
96 words
A method for making a low surface resistivity contact to a high-Tc oxide superconductor with at least one surface, subjecting said surface of said superconductor to abrading or etching in a manner such that said surface assumes a substantially non-degraded state, maintaining said surface in said substantially non-degraded state, and depositing a noble metal on said surface by sputter or evaporative deposition while said surface remains in said substantially non-degraded state to form a metallic contact pad on said surface of said superconductor with low surface resistivity being established between said contact pad and said surface.
Claim 2
Independent Claim
96 words
A method for making a low surface resistivity contact to a high-Tc oxide superconductor with at least one surface, subjecting said surface of said superconductor to abrading or etching in a manner such that said surface assumes a substantially non-degraded state, maintaining said surface in said substantially non-degraded state, and depositing a noble metal on said surface by sputter or evaporative deposition while said surface remains in said substantially non-degraded state to form a metallic contact pad on said surface of said superconductor with low surface resistivity being established between said contact pad and said surface.
Claim 3
Dependent Claim
14 words
A method according to claim 1, wherein the noble metal is silver or gold.
Claim 4
Dependent Claim
26 words
A method according to claim 1, wherein the surface resistivity between said contact pad and said surface is less than about 10 -5 Ω-cm 2 .
Claim 5
Dependent Claim
18 words
A method according to claim 1, wherein said method further comprises connecting a lead to said contact pad.
Claim 6
Dependent Claim
21 words
A method according to claim 4, wherein the lead is connected to the contact pad by soldering or by thermosonic bonding.
Claim 7
Dependent Claim
25 words
A method according to claim 4, wherein the lead is connected to the contact pad by soldering with indium or low melting temperature indium alloy.
Claim 8
Dependent Claim
15 words
A method according to claim 4, wherein the lead is made of a conductive metal.
Claim 9
Dependent Claim
16 words
A method according to claim 7, wherein the conductive metal is copper, gold, aluminum or silver.
Claim 10
Dependent Claim
20 words
A method according to claim 1, wherein the oxide superconductor is Y 1 Ba 2 Cu 3 O x .
Claim 11
Dependent Claim
21 words
A method according to claim 1, wherein the surface resistivity of the contact is less than about 200 μΩ-cm 2 .
Claim 12
Independent Claim
94 words
A method for making a low surface resistivity contact to a high-T c oxide superconductor which comprises providing a high-T c oxide superconductor with at least one surface, sputter-etching said surface so that said surface is in a substantially non-degraded state, and sputter-depositing a noble metal onto said sputter-etched surface while said surface is in substantially non-degraded state to form a metallic layer at said surface of said superconductor with a surface resistivity between said metallic layer and said surface of less than about 1000 μΩ-cm 2 at high-T c oxide superconductor operating temperatures.
Claim 13
Independent Claim
94 words
A method for making a low surface resistivity contact to a high-T c oxide superconductor which comprises providing a high-T c oxide superconductor with at least one surface, sputter-etching said surface so that said surface is in a substantially non-degraded state, and sputter-depositing a noble metal onto said sputter-etched surface while said surface is in substantially non-degraded state to form a metallic layer at said surface of said superconductor with a surface resistivity between said metallic layer and said surface of less than about 1000 μΩ-cm 2 at high-T c oxide superconductor operating temperatures.
Claim 14
Independent Claim
114 words
A method for making a low surface resistivity contact to a high-T c oxide superconductor which comprises providing a high-T c oxide superconductor by forming said superconductor with at least a surface that is in a substantially non-degraded state, minimizing exposure of said surface of said superconductor to air to thereby maintain said surface in said substantially non-degraded state, and depositing a noble metal on said surface while said surface is in said substantially non-degraded state to form a metallic layer contact pad at said surface of said superconductor with a surface resistivity between said metallic layer and said surface of less than about 1000 μΩ-cm 2 at high-T c oxide superconductor operating temperatures.
Claim 15
Independent Claim
114 words
A method for making a low surface resistivity contact to a high-T c oxide superconductor which comprises providing a high-T c oxide superconductor by forming said superconductor with at least a surface that is in a substantially non-degraded state, minimizing exposure of said surface of said superconductor to air to thereby maintain said surface in said substantially non-degraded state, and depositing a noble metal on said surface while said surface is in said substantially non-degraded state to form a metallic layer contact pad at said surface of said superconductor with a surface resistivity between said metallic layer and said surface of less than about 1000 μΩ-cm 2 at high-T c oxide superconductor operating temperatures.
Claim 16
Dependent Claim
49 words
A method according to claim 12, wherein said metal contact pad is formed on the surface of the superconductor within about two hours after the superconductor has been formed, and wherein exposure of the superconductor to air is minimized at all times prior to forming the metal contact pad.
Claim 17
Dependent Claim
47 words
A method according to claim 12, wherein the superconductor, after being formed, is kept under vacuum in an inert medium or in a pure oxygen atmosphere free of water vapor and carbon dioxide, and without exposing the superconductor to air, prior to forming the metal contact pad.
Claim 18
Dependent Claim
34 words
A method according to claim 12, wherein the superconductor, after being formed, is protected by a removable coating which is removed just prior to forming the contact pad without exposing the superconductor to air.
Claim 19
Dependent Claim
16 words
A method according to claim 12, further comprising connecting a lead to the metal contact pad.
Claim 20
Dependent Claim
22 words
A method according to claim 16, wherein the lead is connected to the metal contact pad by soldering or by thermosonic bonding.
Claim 21
Dependent Claim
26 words
A method according to claim 17, wherein the lead is connected to the metal contact pad by soldering with indium or a low melting indium alloy.
Claim 22
Dependent Claim
22 words
A method according to claim 11, wherein said steps of sputter-etching and sputter-depositing are carried out at temperatures below about 100° C.
Claim 23
Dependent Claim
36 words
A method according to claim 11, wherein a lead is connected to said noble metal and wherein said steps of sputter-etching, sputter-depositing and connection of said lead are carried out at temperatures below about 200° C.
Claim 24
Dependent Claim
20 words
A method according to claim 11, wherein the metal-oxide superconductor is Y 1 Ba 2 Cu 3 O x .
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-10-15 | 1994-04-16 | 1994-10-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-10-15 | 1998-04-16 | 1998-10-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-10-15 | 2002-04-16 | 2002-10-16 | $7700.00 | Window Closed / Lapsed |