Patent FR1158885A successfully refreshed from Google Patents.
US4963394A
Expired / Lapsed
US
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Method for producing thin metal films by vapor-deposition
Assignee: Siemens AG
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Filing: 1989-04-12
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Granted: 1990-10-16
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Expires: 2009-04-12
Abstract
Abstract A method for producing thin metal films by vapor-deposition or vacuum metallization in a recipient wherein the partial pressure of the water vapor is set at the beginning of and during the process of vapor-deposition so that the metal layer is deposited in a controlled fashion such that the mechanical stresses occurring in the metal layer are minimum.
Inventors
- 👤 Josef Willer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 00:04
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/24; C23C14/54
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
89 words
A method for manufacturing thin metal films by thermal vapor-deposition comprising the steps of: introducing a substrate to be provided with a metal film into a recipient; determining a range for the value of a mechanical stress that occurs in a resultant vapor-deposited metal film; setting the partial pressure of an auxiliary gas in the recipient so that during the duration of a vapor-deposition, the value of the mechanical stress occurring in the vapor-deposited metal film lies within a prescribed range; and vapor-depositing a metal film on the substrate.
Claim 2
Independent Claim
89 words
A method for manufacturing thin metal films by thermal vapor-deposition comprising the steps of: introducing a substrate to be provided with a metal film into a recipient; determining a range for the value of a mechanical stress that occurs in a resultant vapor-deposited metal film; setting the partial pressure of an auxiliary gas in the recipient so that during the duration of a vapor-deposition, the value of the mechanical stress occurring in the vapor-deposited metal film lies within a prescribed range; and vapor-depositing a metal film on the substrate.
Claim 3
Dependent Claim
74 words
The method of claim 1 including the steps of: determining the partial pressure of the auxiliary gas in the recipient by utilizing a pressure gauge means; providing a means for setting this partial pressure; and setting the partial pressure of the auxiliary gas with the means for setting at the beginning of and during the process of vapor-deposition so that the mechanical stress occurring in the deposited metal layer lies within a prescribed range.
Claim 4
Dependent Claim
33 words
The method of claim 2 including the steps of: introducing the auxiliary gas from a container connected to the recipient; and setting the partial pressure of the auxiliary gas with a metering valve.
Claim 5
Dependent Claim
27 words
The method of claim 2 including the step of setting the partial pressure of the auxiliary gas with a control system connected to the pressure gauge means.
Claim 6
Dependent Claim
23 words
The method of claim 1 including the step of vapor-depositing a metal that has an oxygen affinity that ensures a prescribed, minimum efficiency.
Claim 7
Dependent Claim
25 words
The method of claim 1 including the step of maintaining the partial pressure of the auxiliary gas constant during the vapor-deposition of the metal layer.
Claim 8
Dependent Claim
13 words
The method of claim 1 including the step of vapordepositing a transition metal.
Claim 9
Dependent Claim
29 words
The method of claim 1 including the step of vapordepositing a metal chosen from the group consisting of molybdenum, titanium, vanadium, zirconium, niobium, hafnium, tantalum, tungsten, nickel, and aluminum.
Claim 10
Dependent Claim
25 words
The method of claim 1 including the step of vapordepositing a metal chosen from the group consisting of manganese, ruthenium, rhenium, osmium, iridium, and lanthanum.
Claim 11
Dependent Claim
74 words
The method of claim 1 including the steps of: using molybdenum for the vapor-deposition; depositing a metal layer having a layer thickness of less than approximately 150 nm; depositing the metal layer at a rate that does not exceed approximately 1 nm/s; and setting the partial pressure of the auxiliary gas at the beginning of the vapor-deposition at between approximately 4·10 -4 Pa to about 2.5·10 -3 and within this range during the vapor-deposition.
Claim 12
Dependent Claim
79 words
The method of claim 1 including the steps of setting the partial pressure of the auxiliary gas to less than approximately 1.3·10 -4 Pa before the beginning of the vapor-deposition and increasing the partial pressure of the auxiliary gas to such an extent during the vapor-deposition process that, given a prescribed layer thickness of the metal layer to be vapor-deposited and given a prescribed deposition rate, the mechanical stress of the vapor-deposited metal layer lies within a prescribed range.
Claim 13
Dependent Claim
17 words
The method of claim 1 including the step of using an auxiliary gas that is water vapor.
Claim 14
Dependent Claim
17 words
The method of claim 1 including the step of using an auxiliary gas that contains water vapor.
Claim 15
Dependent Claim
15 words
The method of claim 1 including the step of using an auxiliary gas containing ammonia.
Claim 16
Independent Claim
97 words
A method for producing thin metal films by vapordeposition onto a substrate of a metal chosen from the group consisting of molybdenum, titanium, vanadium, zirconium, niobium, hafnium, tantalum, tungsten, nickel, aluminum, manganese, ruthenium, rhenium. osmium, iridium, and lanthanum, in a vapor-deposition chamber wherein the partial pressure of an auxiliary gas that contains at least one compound chosen from the group consisting of water vapor and ammonia in the chamber is set during the vapor-deposition process at a pressure that causes the mechanical stress that occurs during deposition of the metal layer to be within a prescribed range.
Claim 17
Independent Claim
97 words
A method for producing thin metal films by vapordeposition onto a substrate of a metal chosen from the group consisting of molybdenum, titanium, vanadium, zirconium, niobium, hafnium, tantalum, tungsten, nickel, aluminum, manganese, ruthenium, rhenium. osmium, iridium, and lanthanum, in a vapor-deposition chamber wherein the partial pressure of an auxiliary gas that contains at least one compound chosen from the group consisting of water vapor and ammonia in the chamber is set during the vapor-deposition process at a pressure that causes the mechanical stress that occurs during deposition of the metal layer to be within a prescribed range.
Claim 18
Dependent Claim
75 words
The method of claim 15 including the steps of: determining the partial pressure of the auxiliary gas in the recipient by utilizing a pressure gauge means; providing a means for setting this partial pressure; and setting the partial pressure of the auxiliary gas with the means for setting at the beginning of and during the process of vapor-deposit on so that the mechanical stress occurring in the deposited metal layer lies within a prescribed range.
Claim 19
Dependent Claim
33 words
The method of claim 16 including the steps of: introducing the auxiliary gas from a container connected to the recipient; and setting the partial pressure of the auxiliary gas with a metering valve.
Claim 20
Dependent Claim
27 words
The method of claim 16 including the step of setting the partial pressure of the auxiliary gas with a control system connected to the pressure gauge means.
Claim 21
Dependent Claim
23 words
The method of claim 15 including the step of vapor-depositing a metal that has an oxygen affinity that ensures a prescribed, minimum efficiency.
Claim 22
Dependent Claim
25 words
The method of claim 15 including the step of maintaining the partial pressure of the auxiliary gas constant during the vapor-deposition of the metal layer.
References Cited (Backward Citations)
US3085913A
Cited
US3248256A
Cited
US3639165A
Cited
US3874922A
Cited
US4172156A
Cited
US4129167A
Cited
US4256780A
Cited
DE3004149A1
Cited
US4331702A
Cited
US4395313A
Cited
DE3405625A1
Cited
US4676999A
Cited
US4720401A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-10-15 | 1994-04-16 | 1994-10-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-10-15 | 1998-04-16 | 1998-10-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-10-15 | 2002-04-16 | 2002-10-16 | $7700.00 | Window Closed / Lapsed |