US3248256A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Vacuum evaporation method to obtain silicon dioxide film
Assignee: International Business Machines Corp
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Filing: 1962-07-26
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Granted: 1966-04-26
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Expires: 1982-07-26
Abstract
No abstract record available.
Inventors
- 👤 Budo Yoshiro
- 👤 Hollis L Caswell
- 👤 Joseph R Priest
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 18:36
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/0021; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/944
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
139 words
A METHOD FOR FORMING THIN FILMS OF SUBSTANTIALLY PURE SILICON DIOXIDE MATERIAL COMPRISING THE STEPS OF CONFINING A SOURCE OF SILICON MONOXIDE MATERIAL AND A SUBSTRATE IN A LOW PRESSURE ATMOSPHERE OF APPROXIMATELY 5X10**-5 TORR AND CONSISTING ESSENTIALLY OF A WATER VAPOR PARTIAL PRESSURE, POSITIONING SAID SUBSTRATE WITH RESPECT TO SAID SOURCE SUCH THAT SAID SILICON MONOXIDE EVAPORANT IS CONDENSED THEREON, HEATING SAID SOURCE IN EXCESS OF THE VAPORIZATION TEMPERATURE OF SAID SILICON MONOXIDE MATERIAL AND NOT SUBSTANTIALLY GREATER THAN 1200*C. TO DETERMINE THE RATE OF CONDENSATION OF SAID SILICON MONOXIDE EVAPORANT ON SAID SUBSTRATE SUCH THAT SAID SILICON MONOXIDE EVAPORANT IS SUBSTANTIALLY COMPLETELY OXIDIZED TO FORM A SUBSTANTIALLY PURE SILICON DIOXIDE CONDENSATE, AND CONDENSING SAID SILICON MONOXIDE EVAPORANT ON SAID SUBSTRATE THROUGH A PATTERN DEFINING MASK WHEREBY SAID CONDENSED SILICON MONOXIDE EVAPORANT IS DEFINED IN A PREDETERMINED PATTERN.
Claim 2
Independent Claim
139 words
A METHOD FOR FORMING THIN FILMS OF SUBSTANTIALLY PURE SILICON DIOXIDE MATERIAL COMPRISING THE STEPS OF CONFINING A SOURCE OF SILICON MONOXIDE MATERIAL AND A SUBSTRATE IN A LOW PRESSURE ATMOSPHERE OF APPROXIMATELY 5X10**-5 TORR AND CONSISTING ESSENTIALLY OF A WATER VAPOR PARTIAL PRESSURE, POSITIONING SAID SUBSTRATE WITH RESPECT TO SAID SOURCE SUCH THAT SAID SILICON MONOXIDE EVAPORANT IS CONDENSED THEREON, HEATING SAID SOURCE IN EXCESS OF THE VAPORIZATION TEMPERATURE OF SAID SILICON MONOXIDE MATERIAL AND NOT SUBSTANTIALLY GREATER THAN 1200*C. TO DETERMINE THE RATE OF CONDENSATION OF SAID SILICON MONOXIDE EVAPORANT ON SAID SUBSTRATE SUCH THAT SAID SILICON MONOXIDE EVAPORANT IS SUBSTANTIALLY COMPLETELY OXIDIZED TO FORM A SUBSTANTIALLY PURE SILICON DIOXIDE CONDENSATE, AND CONDENSING SAID SILICON MONOXIDE EVAPORANT ON SAID SUBSTRATE THROUGH A PATTERN DEFINING MASK WHEREBY SAID CONDENSED SILICON MONOXIDE EVAPORANT IS DEFINED IN A PREDETERMINED PATTERN.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-04-25 | 1969-10-25 | 1970-04-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-04-25 | 1973-10-25 | 1974-04-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-04-25 | 1977-10-25 | 1978-04-26 | $7700.00 | Window Closed / Lapsed |