Semiconductor device having polycrystalline silicon resistor

Claim 2

A semiconductor device comprising a semiconductor substrate having a major surface; an insulating layer formed on said major surface of said substrate and having an upper surface; a silicon resistor element formed on said upper surface of said insulating layer and having a specified resistance value; first and second connecting portions connected to respective ends of said silicon resistor element and each formed on said upper surface of said insulating layer; an insulating film formed on said silicon resistor element; and first and second metallic wiring layers connected to said first and second connecting portions, respectively; said silicon resistor element including a first polycrystalline silicon film having an upper face and containing oxygen of at most 15 atomic percents and being formed on said upper surface of said insulating layer with a thickness ranging from 100 Å to 1000 Å for determining substantially said specified resistance value of said silicon resistor element, and a second polycrystalline silicon film having a top face and containing oxygen of at least 20 atomic percents and being attached to said upper face of said first polycrystalline silicon film for protecting said upper face of said first polycrystalline silicon film from thermal oxidation; said insulating film being a silicon oxide film thermally converted from said second polycrystalline silicon film of said silicon resistor element and attached to said top face of said second polycrystalline silicon film of said silicon resistor elements; and each of said first and second connecting portions including a first polycrystalline silicon film continuously formed from said first polycrystalline silicon film of said silicon resistor element and a second polycrystalline silicon film continuously formed from said second polycrystalline silicon film of said silicon resistor element so that said first and second connecting portions have the same film construction as said silicon resistor element and are connected to said first and second metallic wiring layers on said upper surface of said insulating layer, respectively.

Claim 3

A semiconductor device of claim 1, wherein said first and second metallic wiring layers are aluminum layers.

Claim 4

A semiconductor device comprising a semiconductor substrate having a major surface and an impurity region which belongs to a circuit element; a thick field insulating layer selectively formed on said major surface of said substrate except on said impurity region; a thin insulating layer formed on said impurity region; a first contact hole formed in said thin insulating layer to expose a part of said impurity region; a silicon resistor element formed on said thick field insulating layer and on said thin insulating film continuously, and having a specified resistance value; a first connecting portion formed on said thin insulating layer and connected to one end of said silicon resistor element on said thin insulating layer and connected to said part of said impurity region through said first contact hole; and second connecting portion formed on said thick field insulating layer and connected to another end of said silicon resistor element on said thick field insulating layer; an insulating film formed on said resistor element; and inter-ply insulating layer formed on said insulating film and on said second connecting portion; a second contact hole formed in said inter-ply insulating layer to expose a part of said second connecting portion; and a metallic wiring layer formed on said inter-ply insulating layer and connected to said part of said second connecting portion through said second contact hole; said silicon resistor element including a first polycrystalline silicon film having an upper face and containing oxygen of at most 15 atomic percents and being formed on said thick field insulating layer and on said thin insulating layer continuously with a thickness ranging from 100 Å to 1000 Å for determining substantially said specified resistance value of said silicon resistor element, and a second polycrystalline silicon film having a top face and containing oxygen of at least 20 atomic percents and being attached to said upper face of said first polycrystalline silicon film for protecting said upper face of said first polycrystalline silicon film from thermal oxidation; said insulating film being a silicon oxide film thermally converted from said second polycrystalline silicon film of said silicon resistor element and attached to said top face of said second polycrystalline silicon film of said silicon resistor element; each of said first and second connecting portions including a first polycrystalline silicon film continuously formed from said first crystalline silicon film of said silicon resistor element and a second polycrystalline silicon film continuously formed from said second polycrystalline silicon film of said silicon resistor element so that said first and second connecting portions have the same film construction as said silicon resistor element.

Claim 5

A semiconductor device comprising a semiconductor substrate having a major surface and an impurity region which belongs to a circuit element; a thick field insulating layer selectively formed on said major surface of said substrate except on said impurity region; a thin insulating layer formed on said impurity region; a first contact hole formed in said thin insulating layer to expose a part of said impurity region; a silicon resistor element formed on said thick field insulating layer and on said thin insulating film continuously, and having a specified resistance value; a first connecting portion formed on said thin insulating layer and connected to one end of said silicon resistor element on said thin insulating layer and connected to said part of said impurity region through said first contact hole; and second connecting portion formed on said thick field insulating layer and connected to another end of said silicon resistor element on said thick field insulating layer; an insulating film formed on said resistor element; and inter-ply insulating layer formed on said insulating film and on said second connecting portion; a second contact hole formed in said inter-ply insulating layer to expose a part of said second connecting portion; and a metallic wiring layer formed on said inter-ply insulating layer and connected to said part of said second connecting portion through said second contact hole; said silicon resistor element including a first polycrystalline silicon film having an upper face and containing oxygen of at most 15 atomic percents and being formed on said thick field insulating layer and on said thin insulating layer continuously with a thickness ranging from 100 Å to 1000 Å for determining substantially said specified resistance value of said silicon resistor element, and a second polycrystalline silicon film having a top face and containing oxygen of at least 20 atomic percents and being attached to said upper face of said first polycrystalline silicon film for protecting said upper face of said first polycrystalline silicon film from thermal oxidation; said insulating film being a silicon oxide film thermally converted from said second polycrystalline silicon film of said silicon resistor element and attached to said top face of said second polycrystalline silicon film of said silicon resistor element; each of said first and second connecting portions including a first polycrystalline silicon film continuously formed from said first crystalline silicon film of said silicon resistor element and a second polycrystalline silicon film continuously formed from said second polycrystalline silicon film of said silicon resistor element so that said first and second connecting portions have the same film construction as said silicon resistor element.

Claim 6

A semiconductor device of claim 3, wherein said first and second polycrystalline silicon films of said first and second connecting portions contain atoms selected from the group consisting of phosphorus atoms, arsenic atoms, and boron atoms with oxygen atoms.

Claim 7

A semiconductor device of claim 3, wherein said device has a static type random access memory cell including a pair of driver transistors, a pair of switching transistors and a pair of load resistors, said silicon resistor element being said load resistor, and said impurity region being one of a common source and drain region of said driver transistor and said switching transistor.

Claim 8

A semiconductor device of claim 3, wherein said inter-ply insulating layer is made of phospho-silicate glass.

Claim 9

A semiconductor device comprising a semiconductor substrate having a major surface; an insulating layer having an upper surface and formed on said major surface of said substrate; a silicon resistor element formed on said upper surface of said insulating layer and having a specified resistance value, said silicon resistor element having a predetermined length; an insulating film formed entirely on said silicon resistor element; and wiring structures formed on said upper surface of said insulating layer and connected to both ends of said silicon resistor element; said silicon resistor element including a first polycrystalline silicon film having an upper face and containing oxygen of at least 15 atomic percents and being formed on said upper surface of said insulating layer with a thickness ranging from 100 Å to 1000 Å for determining substantially said specified resistance value of said silicon resistor element, and a second polycrystalline silicon film having a top face and containing oxygen of at least 20 atomic percent and being attached to said upper face of said first polycrystalline silicon film for protecting said upper face of said first polycrystalline silicon film from thermal oxidation; said insulating film being a silicon oxide film thermally converted from said second polycrystalline silicon film of said silicon resistor element and attached to said top face of said second polycrystalline silicon film of said silicon resistor element, said silicon oxide film having said predetermined length between both ends of said silicon oxide film in a lengthwise direction; and each of said wiring structures including a first polycrystalline silicon film containing oxygen of at most 15 atomic percents and having a thickness ranging from 100 Å to 1000 Å and being continuously formed from said first polycrystalline silicon film of said silicon resistor element, a second polycrystalline silicon film containing oxygen of at least 20 atomic percents and being continuously formed from said second polycrystalline silicon film of said silicon resistor element, and a metal silicide film formed on said second polycrystalline silicon film of said wiring structure and terminating at said end of said silicon oxide film to define a boundary between said silicon resistor element and said wiring structure.

Claim 10

A semiconductor device comprising a semiconductor substrate having a major surface; an insulating layer having an upper surface and formed on said major surface of said substrate; a silicon resistor element formed on said upper surface of said insulating layer and having a specified resistance value, said silicon resistor element having a predetermined length; an insulating film formed entirely on said silicon resistor element; and wiring structures formed on said upper surface of said insulating layer and connected to both ends of said silicon resistor element; said silicon resistor element including a first polycrystalline silicon film having an upper face and containing oxygen of at least 15 atomic percents and being formed on said upper surface of said insulating layer with a thickness ranging from 100 Å to 1000 Å for determining substantially said specified resistance value of said silicon resistor element, and a second polycrystalline silicon film having a top face and containing oxygen of at least 20 atomic percent and being attached to said upper face of said first polycrystalline silicon film for protecting said upper face of said first polycrystalline silicon film from thermal oxidation; said insulating film being a silicon oxide film thermally converted from said second polycrystalline silicon film of said silicon resistor element and attached to said top face of said second polycrystalline silicon film of said silicon resistor element, said silicon oxide film having said predetermined length between both ends of said silicon oxide film in a lengthwise direction; and each of said wiring structures including a first polycrystalline silicon film containing oxygen of at most 15 atomic percents and having a thickness ranging from 100 Å to 1000 Å and being continuously formed from said first polycrystalline silicon film of said silicon resistor element, a second polycrystalline silicon film containing oxygen of at least 20 atomic percents and being continuously formed from said second polycrystalline silicon film of said silicon resistor element, and a metal silicide film formed on said second polycrystalline silicon film of said wiring structure and terminating at said end of said silicon oxide film to define a boundary between said silicon resistor element and said wiring structure.

Claim 11

A semiconductor device of claim 7, wherein said metal silicide film is a high melting metal silicide film.

Claim 12

A semiconductor device of claim 8, wherein said high melting metal silicide film is a platinum silicide film.