Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
91 words
A semiconductor memory device comprising: a semiconductor substrate having a main surface and a surface on the reverse side; a MOSFET formed on the main surface of said semiconductor substrate; and a storage capacity element formed on the surface of the reverse side of said semiconductor substrate, said storage capacity element having one and another electrode, said one electrode of said storage capacity element being connected to said MOSFET, and said another electrode of said storage capacity element being formed on the surface of the reverse side of said semiconductor substrate.
Claim 2
Dependent Claim
91 words
A semiconductor memory device comprising: a semiconductor substrate having a main surface and a surface on the reverse side; a MOSFET formed on the main surface of said semiconductor substrate; and a storage capacity element formed on the surface of the reverse side of said semiconductor substrate, said storage capacity element having one and another electrode, said one electrode of said storage capacity element being connected to said MOSFET, and said another electrode of said storage capacity element being formed on the surface of the reverse side of said semiconductor substrate.
Claim 3
Dependent Claim
97 words
A semiconductor memory device in accordance with claim 1, wherein a trench is formed on the surface of the reverse side of said semiconductor substrate, and said storage capacity element comprising: an insulating film formed on the surface of the reverse side of said semiconductor substrate including an inner wall surface of said trench; a conductor formed on the surface of the reverse side of said semiconductor substrate including the inside of said trench so as to sandwich said insulating film; and a diffusion region of a memory cell portion connecting said insulating film to said MOSFET.
Claim 4
Dependent Claim
49 words
A semiconductor memory device in accordance with claim 2, wherein said conductor comprising: a first conductor filled in the inside of said trench; and a second conductor formed on the surface of the reverse side of said semiconductor substrate in contact with the exposed surface of said first conductor.
Claim 5
Dependent Claim
45 words
A semiconductor memory device in accordance with claim 2, wherein said trench is formed to extend deeply from the surface of the reverse side of said semiconductor substrate and the bottom portion of said trench is positioned near the main surface of said semiconductor substrate.
Claim 6
Dependent Claim
53 words
A semiconductor memory device in accordance with claim 1, wherein said storage capacity element comprises: an insulating film formed on the surface of the reverse side of said semiconductor substrate; a conductor formed on said insulating film; and a diffusion region of a memory cell portion connecting said insulating film to said MOSFET.
Claim 7
Dependent Claim
15 words
A semiconductor memory device in accordance with claim 3, wherein said first conductor is polysilicon.
Claim 8
Dependent Claim
15 words
A semiconductor memory device in accordance with claim 3, wherein said second conductor is polysilicon.
Claim 9
Dependent Claim
17 words
A semiconductor memory device in accordance with claim 2, wherein said insulating film is an oxide film.