US3882531A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Apparatus for sensing radiation and providing electrical read out
Assignee: General Electric Co
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Filing: 1973-05-29
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Granted: 1975-05-06
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Expires: 1993-05-29
Abstract
Abstract In an array of radiation sensing devices each including a pair of closely coupled conductor-insulator-semiconductor cells on a common substrate, each of the devices is addressed in sequence for read out. Read out of a device is accomplished by reducing the amplitudes of the voltages on the cells of the device in sequence to inject charge stored in the cells into the substrate and by sensing such injected charge. The device is reset for the next cycle of operation by reestablishing voltages in sequence on the cells. Means are provided in the bulk of the substrate to collect injected charge to avoid recollection by the cells of the device of such charge which has not had sufficient time to recombine or diffuse in the substrate away from the vicinity of the cells.
Inventors
- 👤 Gerald J Michon
- 👤 Hubert K Burke
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 22:36
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/154; Y; Y10; Y10S; Y10S148/00; Y10S148/08
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
356 words
A radiation sensing device comprising a substrate of semiconductor material of one conductivity type having a major surface, a first conducting member overlying a first portion of a region of said substrate adjacent said major surface and in insulating relationship therewith, a second conducting member overlying a second portion of said surface adjacent region of said substrate and in insulating relationship therewith, means for coupling said first and second portions of said surface adjacent region, a first voltage means for providing a first voltage between said first conducting member and said substrate to deplete said first portion of majority charge carriers, a second voltage means for providing a second voltage between said second conducting member and said substrate to deplete said second portion of majority charge carriers, means for exposing said substrate to radiation whereby minority carriers generated in said portions are stored therein, means for collapsing said first voltage to cause charge stored in said first portion to flow into said second portion, means for collapsing said second voltage whereby charge stored in said second portion is injected into said substrate, capacitive means in series circuit with the capacitor formed by said second conducting member and said substrate for integrating a first displacement current flow in said series circuit in response to the collapsing of said second voltage thereon, a region of opposite conductivity type in said substrate sPaced from and adjacent to both of said portions of said surface adjacent region of one conductivity type, means for conductively connecting said region of opposite conductivity type to said substrate to deplete mobile carriers from the vicinity of the PN junction formed between said region of opposite conductivity and said substrate, whereby minority charge carriers injected into the substrate are substantially collected and removed from said substrate without substantially altering the charge on said capacitive means, means for reestablishing said second voltage on said second conducting member whereby a second displacement current flows in said series circuit in response to the reestablishment of said second voltage, the time integrated first and second displacement current flows in said capacitive means constituting a measure of said stored charge.
Claim 2
Dependent Claim
356 words
A radiation sensing device comprising a substrate of semiconductor material of one conductivity type having a major surface, a first conducting member overlying a first portion of a region of said substrate adjacent said major surface and in insulating relationship therewith, a second conducting member overlying a second portion of said surface adjacent region of said substrate and in insulating relationship therewith, means for coupling said first and second portions of said surface adjacent region, a first voltage means for providing a first voltage between said first conducting member and said substrate to deplete said first portion of majority charge carriers, a second voltage means for providing a second voltage between said second conducting member and said substrate to deplete said second portion of majority charge carriers, means for exposing said substrate to radiation whereby minority carriers generated in said portions are stored therein, means for collapsing said first voltage to cause charge stored in said first portion to flow into said second portion, means for collapsing said second voltage whereby charge stored in said second portion is injected into said substrate, capacitive means in series circuit with the capacitor formed by said second conducting member and said substrate for integrating a first displacement current flow in said series circuit in response to the collapsing of said second voltage thereon, a region of opposite conductivity type in said substrate sPaced from and adjacent to both of said portions of said surface adjacent region of one conductivity type, means for conductively connecting said region of opposite conductivity type to said substrate to deplete mobile carriers from the vicinity of the PN junction formed between said region of opposite conductivity and said substrate, whereby minority charge carriers injected into the substrate are substantially collected and removed from said substrate without substantially altering the charge on said capacitive means, means for reestablishing said second voltage on said second conducting member whereby a second displacement current flows in said series circuit in response to the reestablishment of said second voltage, the time integrated first and second displacement current flows in said capacitive means constituting a measure of said stored charge.
Claim 3
Dependent Claim
24 words
The device of claim 1 in which said connecting means is an ohmic connection between said region of opposite conductivity type and said substrate.
Claim 4
Dependent Claim
21 words
The device of claim 1 in which said connecting means is a source of voltage for reversely biasing said PN junction.
Claim 5
Dependent Claim
26 words
The device of claim 1 in which said substrate of one conductivity type has high resistivity and said region of opposite conductivity type has low resistivity.
Claim 6
Dependent Claim
26 words
The device of claim 1 in which said substrate of one conductivity type is of N-type conductivity and said region of opposite conductivity type is P-type.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-05-05 | 1978-11-04 | 1979-05-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-05-05 | 1982-11-04 | 1983-05-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-05-05 | 1986-11-04 | 1987-05-06 | $7700.00 | Window Closed / Lapsed |