Devices employing internally strained asymmetric quantum wells

Claim 2

An optical device comprising means responsive to light for generating a photocurrent, a structure having a semiconductor quantum well region, and means responsive to said photocurrent for electrically controlling a coefficient of absorption of said semiconductor quantum well region in order to cause said index of refraction to vary in response to variations of said photocurrent, said optical device characterized in that, said semiconductor quantum well region includes first and second layers and a subregion between and in contact with said first and second layers, said first and second layers comprising wide bandgap lattice matched semiconductor material, said subregion comprising at least one layer of substantially narrow bandgap semiconductor material, said subregion being lattice mismatched to cause a longitudinal strain along the <hhl> direction for polarizing electrons and holes within said quantum well region in an opposite direction relative to a direction of an electric field applied to said structure, where h and l are integer numbers having values greater than or equal to 1.

Claim 3

A semiconductor device grown on a semiconductor substrate, said device comprising an n-type conductivity region, a quantum well region, and a p-type conductivity region, said quantum well region including a first layers, a second layer, and a subregion between and in contact with said first and second layers, said first and second layers comprising substantially intrinsic semiconductor material substantially lattice matched to said substrate, said subregion comprising at least one layer of substantially intrinsic semiconductor material having a bandgap narrow than a corresponding bandgap in said first and second layers, said subregion being lattice mismatched to said substrate to cause a longitudinal strain along the <hhl> direction for generating an electric field in an opposite direction relative to a direction of an electric field applied to said structure, where h and l are integer numbers having values greater than or equal to 1.

Claim 4

A semiconductor device grown on a semiconductor substrate, said device comprising an n-type conductivity region, a quantum well region, and a p-type conductivity region, said quantum well region including a first layers, a second layer, and a subregion between and in contact with said first and second layers, said first and second layers comprising substantially intrinsic semiconductor material substantially lattice matched to said substrate, said subregion comprising at least one layer of substantially intrinsic semiconductor material having a bandgap narrow than a corresponding bandgap in said first and second layers, said subregion being lattice mismatched to said substrate to cause a longitudinal strain along the <hhl> direction for generating an electric field in an opposite direction relative to a direction of an electric field applied to said structure, where h and l are integer numbers having values greater than or equal to 1.

Claim 5

The semiconductor device defined in claim 2 wherein said n-type, p-type and quantum well regions comprise zincblende semiconductor material.

Claim 6

The semiconductor device defined in claim 3 wherein said zincblende material is selected from the group consisting of Group III-V semiconductor compositions.

Claim 7

A semiconductor device grown on a semiconductor substrate, said device comprising an n-type conductivity region, a quantum well region, and a p-type conductivity region, said quantum well region including a first layers, a second layer, and a subregion between and in contact with said first and second layers, said first and second layers comprising substantially intrinsic semiconductor material substantially lattice matched to said substrate, said subregion comprising a plurality of strain layers composed of substantially intrinsic semiconductor material having a bandgap narrower than a corresponding bandgap in said first and second layers, said strained layers being separated from one another by a corresponding plurality of unstrained layers composed of substantially intrinsic semiconductor material substantially lattice matched to said substrate and having a bandgap wider than a corresponding bandgap in said strained layers, said strained layers being lattice mismatched to said substrate to cause a longitudinal strain along the <hhl> direction for generating an electric field in an opposite direction relative to a direction of an electric field applied to said structure, where h and l are integer numbers having values greater than or equal to 1.

Claim 8

A semiconductor device grown on a semiconductor substrate, said device comprising an n-type conductivity region, a quantum well region, and a p-type conductivity region, said quantum well region including a first layers, a second layer, and a subregion between and in contact with said first and second layers, said first and second layers comprising substantially intrinsic semiconductor material substantially lattice matched to said substrate, said subregion comprising a plurality of strain layers composed of substantially intrinsic semiconductor material having a bandgap narrower than a corresponding bandgap in said first and second layers, said strained layers being separated from one another by a corresponding plurality of unstrained layers composed of substantially intrinsic semiconductor material substantially lattice matched to said substrate and having a bandgap wider than a corresponding bandgap in said strained layers, said strained layers being lattice mismatched to said substrate to cause a longitudinal strain along the <hhl> direction for generating an electric field in an opposite direction relative to a direction of an electric field applied to said structure, where h and l are integer numbers having values greater than or equal to 1.

Claim 9

The semiconductor device defined in claim 5 wherein said n-type, p-type and quantum well regions comprise zinc blende semiconductor material.

Claim 10

The semiconductor device defined in claim 6 wherein said zincblende material is selected from the group consisting of Group III-V semiconductor compositions.