US4952768A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Electric discharge machining electrode
Assignee: Mitsubishi Electric Corp
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Filing: 1988-03-17
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Granted: 1990-08-28
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Expires: 2008-03-17
Abstract
Abstract An electrode for precision electric discharge machining having an improved machining rate and surface smoothness with respect to conventional graphite and copper electrodes. The electrode is formed by silicon or other materials which has the same characteristics as silicon, a base of a low melting point metal or an alloy of such a low melting point metal is covered with a layer composed of a mixture of the metal and a high resistivity inorganic compound. The outer layer may be formed by adhesion or by thermal spraying or by a powder metal sintering technique.
Inventors
- 👤 Naotake Mohri
- 👤 Nagao Saito
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 00:37
CPC Classifications
B; B23; B23H; B23H1/00; B23H1/04; B23H1/06
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
104 words
An electrode for precision discharge maching, comprising: a base made of an alloy of a low melting point metal which is a material selected from the group consisting of Si, ZnO, ZnO 2 , ZnSiO 2 , ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, GaAs, GaP, GaSb, GaN, GaS, GaSe, InAs, InP, InSb, AlAs, PbS, PbSe, PbTe, Bi 2 Te 3 , Bi 2 Se 3 , ZnFe 2 O 4 , and NiMn 2 O 4 ; and a covering layer formed of one of a mixture and solutions of said low melting point metal, semi metals, semi conductors, and high resistivity inorganic compounds.
Claim 2
Dependent Claim
104 words
An electrode for precision discharge maching, comprising: a base made of an alloy of a low melting point metal which is a material selected from the group consisting of Si, ZnO, ZnO 2 , ZnSiO 2 , ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, GaAs, GaP, GaSb, GaN, GaS, GaSe, InAs, InP, InSb, AlAs, PbS, PbSe, PbTe, Bi 2 Te 3 , Bi 2 Se 3 , ZnFe 2 O 4 , and NiMn 2 O 4 ; and a covering layer formed of one of a mixture and solutions of said low melting point metal, semi metals, semi conductors, and high resistivity inorganic compounds.
Claim 3
Dependent Claim
27 words
The electrode of claim 1, wherein said inorganic compounds are selected from the group consisting of simple and compound semiconductor materials, carbides, oxides, salts, and carbonic materials.
Claim 4
Dependent Claim
13 words
The electrode of claim 1, wherein said layer comprises a thermally sprayed layer.
Claim 5
Dependent Claim
18 words
The electrode of claim 1, wherein said layer comprises a powder metal sintered layer formed over said base.
Claim 6
Dependent Claim
12 words
The electrode of claim 1, wherein said layer comprises a sintered layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-08-27 | 1994-02-26 | 1994-08-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-08-27 | 1998-02-26 | 1998-08-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-08-27 | 2002-02-26 | 2002-08-28 | $7700.00 | Window Closed / Lapsed |