US4948756A
Expired / Lapsed
US
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Method of making interconnects between polysilicon layers
Assignee: Panasonic Holdings Corp
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Filing: 1988-10-28
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Granted: 1990-08-14
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Expires: 2008-10-28
Abstract
Abstract Disclosed is a process for making a semiconductor device which has two polycrystalline layers (5) and (15) isolated by insulation films. Openings are made utilizing a single photoresist mask by etching the polycrystalline silicon layer and the underlying insulation film in one sequence. The polycrystalline silicon layers and diffused regions of the substrate exposed in the openings, are connected with a tungsten film (12) by selective deposition.
Inventors
- 👤 Seiji Ueda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 01:16
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/064; H10W20/066; H10D; H10D30/00; H10D30/60; H10W20/056; H10W20/057; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4437; H10W20/4441; H10W20/4451; Y; Y10; Y10S; Y10S148/00; Y10S148/02
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
305 words
A method for making a semiconductor device comprising the steps of: forming a first insulation film on a semiconductor substrate; forming a first polycrystalline semiconductor layer on selected parts of said first insulation film so that said first insulation film is underlying said first polycrystalline semiconductor layer; forming a second insulation film on said first polycrystalline semiconductor layer so that said first polycrystalline semiconductor layer is underlying said second insulation film; forming a second polycrystalline semiconductor layer on a selected part of said second insulation film; forming at least two openings, a first opening penetrating said first insulation film, said first polycrystalline semiconductor layer and said second insulation film thereby exposing side walls of said first insulation film, said first polycrystalline semiconductor layer and said second insulation film and exposing a surface of said substrate and, a second opening penetrating said second insulation film and said second polycrystalline semiconductor layer thereby exposing side walls of said second insulation film and said second polycrystalline semiconductor layer and exposing a surface of said first polycrystalline semiconductor layer; introducing an impurity through said first opening into said substrate to form an impurity-diffused region in said substrate; and selectively forming at least two conductive films, a first conductive film being formed in said first opening, and only on said impurity-diffused region, and said side walls of said first insulation film and said first polycrystalline semiconductor layer to connect together said impurity-diffused region, said first polycrystalline semiconductor layer and said first conductive film in self-alignment and, a second conductive film being formed in said second opening and on said surface of said first polycrystalline semiconductor layer, said side walls of said second insulation film and said second polycrystalline semiconductor layer to connect together said first polycrystalline semiconductor layer, said second polycrystalline semiconductor layer, and said second conductive film in self-alignment.
Claim 2
Independent Claim
305 words
A method for making a semiconductor device comprising the steps of: forming a first insulation film on a semiconductor substrate; forming a first polycrystalline semiconductor layer on selected parts of said first insulation film so that said first insulation film is underlying said first polycrystalline semiconductor layer; forming a second insulation film on said first polycrystalline semiconductor layer so that said first polycrystalline semiconductor layer is underlying said second insulation film; forming a second polycrystalline semiconductor layer on a selected part of said second insulation film; forming at least two openings, a first opening penetrating said first insulation film, said first polycrystalline semiconductor layer and said second insulation film thereby exposing side walls of said first insulation film, said first polycrystalline semiconductor layer and said second insulation film and exposing a surface of said substrate and, a second opening penetrating said second insulation film and said second polycrystalline semiconductor layer thereby exposing side walls of said second insulation film and said second polycrystalline semiconductor layer and exposing a surface of said first polycrystalline semiconductor layer; introducing an impurity through said first opening into said substrate to form an impurity-diffused region in said substrate; and selectively forming at least two conductive films, a first conductive film being formed in said first opening, and only on said impurity-diffused region, and said side walls of said first insulation film and said first polycrystalline semiconductor layer to connect together said impurity-diffused region, said first polycrystalline semiconductor layer and said first conductive film in self-alignment and, a second conductive film being formed in said second opening and on said surface of said first polycrystalline semiconductor layer, said side walls of said second insulation film and said second polycrystalline semiconductor layer to connect together said first polycrystalline semiconductor layer, said second polycrystalline semiconductor layer, and said second conductive film in self-alignment.
Claim 3
Dependent Claim
23 words
A method in accordance with claim 1, wherein said first polycrystalline semiconductor layer and said second polycrystalline semiconductor layer are polycrystalline silicon layers.
Claim 4
Dependent Claim
31 words
A method in accordance with claim 1, wherein said first polycrystalline semiconductor layer and said second polycrystalline semiconductor layer are polycrystalline silicon layers, and said conductive film is a tungsten film.
Claim 5
Independent Claim
304 words
A method for making a semiconductor device comprising the steps of: forming a first insulation film on a semiconductor substrate; forming a first polycrystalline semiconductor layer on selected parts of said first insulation film, so that said first insulation film is underlying said first polycrystalline semiconductor layer; forming a second insulation film on said first polycrystalline semiconductor layer so that said first polycrystalline semiconductor layer is underlying said second insulation film; forming a second polycrystalline semiconductor layer on a selected part of said second insulation film; forming at least two openings, a first opening penetrating said first insulation film, said first polycrystalline semiconductor layer and said second insulation film, thereby exposing side walls of said first insulation film, said first polycrystalline semiconductor layer and said second insulation film and a first surface of said substrate and, a second opening penetrating said second insulation film, and said second polycrystalline semiconductor layer thereby exposing side walls of said second insulation film and said second polycrystalline semiconductor layer and exposing a second surface of said substrate; introducing an impurity through said first opening into said first region of said substrate to form an impurity-diffused region in said first region of said substrate; and selectively forming at least two conductive film, a first conductive film being formed in said first opening only on said impurity-diffused region, and said side walls of said first insulation film and said first polycrystalline semiconductor layer to connect together said impurity-diffused region, said first polycrystalline semiconductor layer and said first conductive film in self-alignment and, a second conductive film being formed in said second opening on said second surface of said substrate, said side walls of said second insulation film and said second polycrystalline semiconductor layer to connect together said substrate, said second polycrystalline semiconductor layer and said second conductive film in self-alignment.
Claim 6
Independent Claim
304 words
A method for making a semiconductor device comprising the steps of: forming a first insulation film on a semiconductor substrate; forming a first polycrystalline semiconductor layer on selected parts of said first insulation film, so that said first insulation film is underlying said first polycrystalline semiconductor layer; forming a second insulation film on said first polycrystalline semiconductor layer so that said first polycrystalline semiconductor layer is underlying said second insulation film; forming a second polycrystalline semiconductor layer on a selected part of said second insulation film; forming at least two openings, a first opening penetrating said first insulation film, said first polycrystalline semiconductor layer and said second insulation film, thereby exposing side walls of said first insulation film, said first polycrystalline semiconductor layer and said second insulation film and a first surface of said substrate and, a second opening penetrating said second insulation film, and said second polycrystalline semiconductor layer thereby exposing side walls of said second insulation film and said second polycrystalline semiconductor layer and exposing a second surface of said substrate; introducing an impurity through said first opening into said first region of said substrate to form an impurity-diffused region in said first region of said substrate; and selectively forming at least two conductive film, a first conductive film being formed in said first opening only on said impurity-diffused region, and said side walls of said first insulation film and said first polycrystalline semiconductor layer to connect together said impurity-diffused region, said first polycrystalline semiconductor layer and said first conductive film in self-alignment and, a second conductive film being formed in said second opening on said second surface of said substrate, said side walls of said second insulation film and said second polycrystalline semiconductor layer to connect together said substrate, said second polycrystalline semiconductor layer and said second conductive film in self-alignment.
Claim 7
Dependent Claim
23 words
A method in accordance with claim 4, wherein said first polycrystalline semiconductor layer and said second polycrystalline semiconductor layer are polycrystalline silicon layers.
Claim 8
Dependent Claim
31 words
A method in accordance with claim 4, wherein said first polycrystalline semiconductor layer and said second polycrystalline semiconductor layer are polycrystalline silicon layers, and said conductive film is a tungsten film.
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