P-N junction diodes in silicon carbide

Claim 1

A planar diode suitable for operation under conditions of higher temperatures, higher power levels, and under higher radiation density than diodes formed from other semiconductor materials and comprising: a doped silicon carbide substrate having a first conductivity type; a doped well of silicon carbide within said substrate having the opposite conductivity type from said doped silicon carbide substrate, said doped well forming a p-n junction with said substrate, with portions of said p-n junction being adjacent the surface of said substrate; an insulation layer on said surface of said silicon carbide substrate and positioned over said p-n junction at said surface; an ohmic contact upon said substrate; an ohmic contact upon said well; and a conductor separate from either of said ohmic contacts and positioned upon the insulation layer directly above the p-n junction for permitting a separate potential to be applied directly to said portions of the p-n junction adjacent said surface of said substrate to thereby prevent the depletion zone adjacent the well from substantially expanding in a direction parallel to the surface of the diode.