Method of making silicon carbide junction diodes

Abstract

Abstract THE PRODUCTION OF ELECTROLUMINESCENT SILICON CARBIDE JUNCTION DIODES IS DESCRIBED. THESE DIODES ARE PREFERABLE PRODUCED BY GROWTH FROM A SILICON CARBIDE OR CARBON SOLUTION IN SILICON FORMED BETWEEN A SURFACE OF A P OR N-TYPE SILICON CARBIDE BASE CRYSTAL AND A SOURCE OF CARBON ATOMS SUCH AS A BLOCK OF SOLID CARBON. THE SILICON CONTAINS ONE OR MORE P OR N-TYPE IMPURITIES SO THAT A P-N JUNTION IS FORMED ON THE CRYSTAL. A MULTISTRATUM EPITAXIAL LAYER IS GROWN ON THE BASE CRYSTAL BY PROVIDING IMMEDIATELY ADJACENT THE BASE CRYSTAL A LAYER OF SILICON HAVING ONE IMPURITY CONCENTRATION AND PROVIDING AT A REMOTE SPOT IN THE REACTION ZONE ANOTHER MASS OF SILICON HAVING A DIFFERENT IMPURITY CONCENTRATION. THE INITIAL STRATUM IS GROWN AT A RELATIVELY LOW TEMPERATURE AND THE SECOND STRATUM IS GROWN AT A HIGHER TEMPERATURE. THE INITIAL STRATUM CAN BE VERY THIN (LESS THAN .0005 INCH) AND TRANSPARENT AND THE SECOND STRATUM CAN BE OPAQUE AND OF LOW RESISTANCE DUT TO CODOPING WITH BORON AND ALUMINUM.

Inventors

• 👤 G Sanjiv Kamath

Bibliographic Details