Plasma processor

Claim 2

A plasma processor for establishing an electron cyclotron resonance driven plasma in a reaction gas for treating a substrate disposed in the processor comprising: a chamber containing a plasma generation region in which a plasma is generated and a reaction region in which a substrate is disposed by the plasma; magnetostatic field generation means for generating a magnetostatic field in the chamber; electromagnetic electric field formation means for generating an electric field generally perpendicular to the magnetostatic field; and moving magnetic field generation means for generating a moving magnetic field intersecting the magnetostatic field between said magnetostatic field generation means and a substrate disposed in said chamber for deflecting the plasma across the substrate during treatment of the substrate by the plasma in said chamber including a permanent magnet disposed outside said chamber for generating a magnetic field in the plasma generation region of said chamber and means for rotating said permanent magnet around said chamber to produce the moving magnetic field, whereby the substrate is uniformly treated.

Claim 3

The plasma processor of claim 1 wherein said means for rotating includes gears for engaging and rotating said permanent magnet.

Claim 4

The plasma processor of claim 1 wherein said means for rotating includes rotating discs and an endless belt for coupling said discs and rotating said permanent magnet.

Claim 5

A plasma processor for establishing an electron cyclotron resonance driven plasma in a reaction gas for treating a substrate disposed in the processor comprising: a chamber containing a plasma generation region in which a plasma is generated and a reaction region in which a substrate is disposed by the plasma; magnetostatic field generation means for generating a magnetostatic field in the chamber; electromagnetic electric field formation means for generating an electric field generally perpendicular to the magnetostatic field; and moving magnetic field generation means for generating a moving magnetic field intersecting the magnetostatic field between said magnetostatic field generation means and a substrate disposed in said chamber for deflecting the plasma across the substrate during treatment of the substrate by the plasma in said chamber including a permanent magnet disposed outside said chamber for generating a magnetic field in the reaction region of said chamber and means for rotating said permanent magnet around said chamber to produce the moving magnetic field, whereby the substrate is uniformly treated.

Claim 6

A plasma processor for establishing an electron cyclotron resonance driven plasma in a reaction gas for treating a substrate disposed in the processor comprising: a chamber containing a plasma generation region in which a plasma is generated and a reaction region in which a substrate is disposed by the plasma; magnetostatic field generation means for generating a magnetostatic field in the chamber; electromagnetic electric field formation means for generating an electric field generally perpendicular to the magnetostatic field; and moving magnetic field generation means for generating a moving magnetic field intersecting the magnetostatic field between said magnetostatic field generation means and a substrate disposed in said chamber for deflecting the plasma across the substrate during treatment of the substrate by the plasma in said chamber including a permanent magnet disposed outside said chamber for generating a magnetic field in the reaction region of said chamber and means for rotating said permanent magnet around said chamber to produce the moving magnetic field, whereby the substrate is uniformly treated.

Claim 7

The plasma processor of claim 4 wherein said means for rotating includes gears for engaging and rotating said permanent magnet.

Claim 8

The plasma processor of claim 4 wherein said means for rotating includes rotating discs and an endless belt for coupling said discs and rotating said permanent magnet.

Claim 9

A plasma processor for establishing an electron cyclotron resonance driven plasma in a reaction gas for treating a substrate disposed in the processor comprising: a chamber containing a plasma generation region in which a plasma is generated and a reaction region in which a substrate is disposed by the plasma; magnetostatic field generation means having a central axis relative to said chamber for generating a magnetostatic field in the chamber; electromagnetic electric field formation means for generating an electric field generally perpendicular to the magnetostatic field; and moving magnetic field generation means for generating a moving magnetic field intersecting the magnetostatic field between said magnetostatic field generation means and a substrate disposed in said chamber for deflecting the plasma across the substrate during treatment of the substrate by the plasma in said chamber including a plurality of magnetic plates of high permeability for generating a magnetic field in the plasma generation region of said chamber and drive means for reciprocatingly moving said magnetic plates along directions generally perpendicular to the axis of said magnetostatic field generation means to produce the moving magnetic field, whereby the substrate is uniformly treated.

Claim 10

A plasma processor for establishing an electron cyclotron resonance driven plasma in a reaction gas for treating a substrate disposed in the processor comprising: a chamber containing a plasma generation region in which a plasma is generated and a reaction region in which a substrate is disposed by the plasma; magnetostatic field generation means having a central axis relative to said chamber for generating a magnetostatic field in the chamber; electromagnetic electric field formation means for generating an electric field generally perpendicular to the magnetostatic field; and moving magnetic field generation means for generating a moving magnetic field intersecting the magnetostatic field between said magnetostatic field generation means and a substrate disposed in said chamber for deflecting the plasma across the substrate during treatment of the substrate by the plasma in said chamber including a plurality of magnetic plates of high permeability for generating a magnetic field in the plasma generation region of said chamber and drive means for reciprocatingly moving said magnetic plates along directions generally perpendicular to the axis of said magnetostatic field generation means to produce the moving magnetic field, whereby the substrate is uniformly treated.

Claim 11

The plasma processor of claim 7 wherein said drive means includes a plurality of movable supports, each supporting at least one magnetic plate, a plurality of shafts, each threadedly engaging at least one of said supports, a motor for rotating each shaft, and a controller for controlling operation of said motors.

Claim 12

The plasma processor of claim 7 wherein said drive means includes a stationary ring and a movable ring, each of said magnetic plates being respectively pivotally attached to said stationary and movable rings, a motor for rotating said movable ring relative to said stationary ring, and a controller for controlling said motor.

Claim 13

A plasma processor for establishing an electron cyclotron resonance driven plasma in a reaction gas for treating a substrate disposed in the processor comprising: a chamber containing a plasma generation region in which a plasma is generated and a reaction region in which a substrate is disposed by the plasma and including an outlet port for outputting the plasma from the plasma generation region to the reaction region; magnetostatic field generation means having a central axis relative to said chamber for generating a magnetostatic field in the chamber; electromagnetic electric field formation means for generating an electric field generally perpendicular to the magnetostatic field; and moving magnetic field generation means for generating a moving magnetic field intersecting the magnetostatic field between said magnetostatic field generation means and a substrate disposed in said chamber for deflecting the plasma across the substrate during treatment of the substrate by the plasma in said chamber including a plurality of magnetic plates of high permeability for generating a magnetic field between the outlet port and a substrate in the reaction region of said chamber and drive means for reciprocatingly moving said magnetic plates along directions generally perpendicular to the axis of said magnetostatic field generation means to produce the moving magnetic field, whereby the substrate is uniformly treated.

Claim 14

A plasma processor for establishing an electron cyclotron resonance driven plasma in a reaction gas for treating a substrate disposed in the processor comprising: a chamber containing a plasma generation region in which a plasma is generated and a reaction region in which a substrate is disposed by the plasma and including an outlet port for outputting the plasma from the plasma generation region to the reaction region; magnetostatic field generation means having a central axis relative to said chamber for generating a magnetostatic field in the chamber; electromagnetic electric field formation means for generating an electric field generally perpendicular to the magnetostatic field; and moving magnetic field generation means for generating a moving magnetic field intersecting the magnetostatic field between said magnetostatic field generation means and a substrate disposed in said chamber for deflecting the plasma across the substrate during treatment of the substrate by the plasma in said chamber including a plurality of magnetic plates of high permeability for generating a magnetic field between the outlet port and a substrate in the reaction region of said chamber and drive means for reciprocatingly moving said magnetic plates along directions generally perpendicular to the axis of said magnetostatic field generation means to produce the moving magnetic field, whereby the substrate is uniformly treated.