US4713585A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Ion source
Assignee: Hitachi Ltd
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Filing: 1986-09-26
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Granted: 1987-12-15
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Expires: 2006-09-26
Abstract
Abstract An ion source for producing an ion beam utilized for fabrication and processing of semiconductors, thin films or the like includes a plasma producing chamber equipped with first magnetic means for limiting a plasma region and a plasma expansion chamber provided in combination with the plasma producing chamber on the side where a beam extracting electrode is disposed. The plasma expansion chamber is provided with second magnet array for confining and holding a plasma region therein which is of a larger area than that of the plasma region formed in the plasma producing chamber.
Inventors
- 👤 Yasunori Ohno
- 👤 Tomoe Kurosawa
- 👤 Tadashi Sato
- 👤 Yukio Kurosawa
- 👤 Yoshimi Hakamata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 19:36
CPC Classifications
H; H01; H01J; H01J27/00; H01J27/02; H01J27/08; H01J27/14; H01J27/16; H01J27/18; H01J37/00; H01J37/02; H01J37/04; H01J37/08
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
105 words
An ion source, comprising a plasma producing chamber supplied with a gas for producing a plasma through high-frequency electric discharge, first magnetic means provided within said plasma producing chamber for limiting a plasma region defined within said plasma producing chamber, beam extracting means for extracting an ion beam from said plasma producing chamber, a plasma expansion chamber provided in such a manner that said plasma producing chamber is across the plasma expansion chamber from said beam extracting means, and second magnetic means for confining and holding a plasma region having an area larger than that of the plasma region formed within said plasma producing chamber.
Claim 2
Dependent Claim
105 words
An ion source, comprising a plasma producing chamber supplied with a gas for producing a plasma through high-frequency electric discharge, first magnetic means provided within said plasma producing chamber for limiting a plasma region defined within said plasma producing chamber, beam extracting means for extracting an ion beam from said plasma producing chamber, a plasma expansion chamber provided in such a manner that said plasma producing chamber is across the plasma expansion chamber from said beam extracting means, and second magnetic means for confining and holding a plasma region having an area larger than that of the plasma region formed within said plasma producing chamber.
Claim 3
Dependent Claim
35 words
An ion source according to claim 1, wherein said high-frequency electric discharge is produced by supplying a high-frequency power to a high frequency coil installed within said plasma producing chamber outside of said plasma region.
Claim 4
Dependent Claim
29 words
An ion source according to claim 1, wherein the ion source comprises a plurality of said plasma producing chambers, each of which is provided with said plasma expansion chamber.
Claim 5
Dependent Claim
35 words
An ion source according to claim 3, wherein said high-frequency electric discharge is produced by supplying a high-frequency power to a high frequency coil installed within said plasma producing chamber outside of said plasma region.
Claim 6
Dependent Claim
45 words
An ion source according to claim 3, wherein a vacuum container is disposed below each of said plasma expansion chambers, said vacuum container including a rotatable holder for mounting thereon a workpiece to be processed by the ion beam extracted through said beam extracting means.
Claim 7
Dependent Claim
47 words
An ion source according to claim 1, wherein the ion source further comprises a vacuum container disposed below said plasma expansion chamber, said vacuum container including a rotatable holder for mounting thereon a workpiece to be processed by the ion beam extracted through said beam extracting means.
Claim 8
Dependent Claim
29 words
An ion source according to claim 6, wherein the ion source comprises a plurality of said plasma producing chambers, each of which is provided with said plasma expansion chamber.
Claim 9
Dependent Claim
45 words
An ion source according to claim 7, wherein a vacuum container is disposed below each of said plasma expansion chambers, said vacuum container including a rotatable holder for mounting thereon a workpiece to be processed by the ion beam extracted through said beam extracting means.
Claim 10
Dependent Claim
107 words
An ion source comprising a plasma producing chamber supplied with a gas for producing a plasma through microwave electric discharge, first magnetic means provided in combination with said plasma producing chamber for limiting a plasma region defined within said plasma producing chamber, beam extracting means for extracting an ion beam from said plasma producing chamber, a plasma expansion chamber provided in such a manner that said plasma producing chamber is across the plasma expansion chamber from said beam extracting means, and second magnetic means for confining and holding a plasma region having an area larger than that of the plasma region formed within said plasma producing chamber.
Claim 11
Dependent Claim
107 words
An ion source comprising a plasma producing chamber supplied with a gas for producing a plasma through microwave electric discharge, first magnetic means provided in combination with said plasma producing chamber for limiting a plasma region defined within said plasma producing chamber, beam extracting means for extracting an ion beam from said plasma producing chamber, a plasma expansion chamber provided in such a manner that said plasma producing chamber is across the plasma expansion chamber from said beam extracting means, and second magnetic means for confining and holding a plasma region having an area larger than that of the plasma region formed within said plasma producing chamber.
Claim 12
Dependent Claim
47 words
An ion source according to claim 9, wherein the ion source further comprises a vacuum container disposed below said plasma expansion chamber, said vacuum container including a rotatable holder for mounting thereon a workpiece to be processed by the ion beam extracted through said beam extracting means.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-12-14 | 1991-06-15 | 1991-12-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-12-14 | 1995-06-15 | 1995-12-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-12-14 | 1999-06-15 | 1999-12-15 | $7700.00 | Window Closed / Lapsed |