Semiconductor device having a time delay function

Claim 2

A semiconductor device having a time delay function comprising: a first complementary metal-oxide-semiconductor (CMOS) inverter including a first P-channel transistor and a first N-channel transistor serially connected with said first P-channel transistor; an input terminal connected to gates of said first P-channel and N-channel transistors and receiving an input signal; a first voltage source terminal supplied with a positive power source; a first junction field effect transistor (JFET) connected between a source of said first P-channel transistor and said first voltage source terminal, a gate of said first N-channel JFET being connected to said first voltage source terminal; a second voltage source terminal supplied with a reference power source; a second junction field effect transistor connected between a source of said first N-channel transistor and said second voltage source terminal, a gate of said second JFET being connected to said second voltage source terminal; a second complementary metal-oxide-semiconductor (CMOS) inverter including a second P-channel transistor and a second N-channel transistor serially connected to said second P-channel transistor; an output terminal connected to drains of said second P-channel and N-channel transistors and producing a predetermined time delay signal; a third junction field effect transistor connected between a source of said second P-channel transistor and said first voltage source terminal, a gate of said third JFET being connected to said first voltage source terminal; and a fourth junction field effect transistor connected between a source of said second N-channel transistor and said second voltage source terminal, a gate of said fourth JFET being connected to said second voltage source terminal, wherein drains of said first P-channel and N-channel transistors are connected to gates of said second P-channel and N-channel transistors.

Claim 3

The semiconductor device of claim 1, wherein said first and third JFETs are N-type and said second and fourth JFETs are P-type, respectively.

Claim 4

A semiconductor device having a time delay function comprising: a first complementary metal-oxide semiconductor inverter including a first P-channel transistor and a first N-channel transistor connected in series with said first P-channel transistor; an input terminal connected to gate of said first P-channel and N-channel transistors and receiving an input signal; a first voltage source terminal supplied with a positive power source; a second voltage source terminal supplied with a reference power source; a second complementary metal-oxide-semiconductor inverter including a second P-channel transistor and a second N-channel transistor connected in series to said second P-channel transistor; an output terminal connected to drains of said second P-channel and N-channel transistors and producing a predetermined time delay signal; and a junction field effect transistor connected between a common drain of said first P-channel and N-channel transistors and a common gate of said second P-channel and N-channel transistors; wherein sources of said first P-channel transistor and said second P-channel transistor are connected to the first voltage source terminal, and sources of said first N-channel transistor and said second N-channel transistor are connected to the second voltage source terminal.

Claim 5

A semiconductor device having a time delay function comprising: a first complementary metal-oxide semiconductor inverter including a first P-channel transistor and a first N-channel transistor connected in series with said first P-channel transistor; an input terminal connected to gate of said first P-channel and N-channel transistors and receiving an input signal; a first voltage source terminal supplied with a positive power source; a second voltage source terminal supplied with a reference power source; a second complementary metal-oxide-semiconductor inverter including a second P-channel transistor and a second N-channel transistor connected in series to said second P-channel transistor; an output terminal connected to drains of said second P-channel and N-channel transistors and producing a predetermined time delay signal; and a junction field effect transistor connected between a common drain of said first P-channel and N-channel transistors and a common gate of said second P-channel and N-channel transistors; wherein sources of said first P-channel transistor and said second P-channel transistor are connected to the first voltage source terminal, and sources of said first N-channel transistor and said second N-channel transistor are connected to the second voltage source terminal.

Claim 6

The semiconductor device of claim 3, further comprised of said junction field effect transistor having a N-channel.

Claim 7

The semiconductor device of claim 3, further comprised of said junction field effect transistor having a P-channel.

Claim 8

The semiconductor device of claim 3, further comprised of said junction field effect transistor having a N-channel and a gate connectable to the positive power source.

Claim 9

The semiconductor device of claim 3, further comprised of said junction field effect transistor having a P-channel and a gate connectable to the reference power source.

Claim 10

The semiconductor device of claim 1, further comprised of said first and third junction field effect transistors having N-channels.

Claim 11

The semiconductor device of claim 1, further comprised of said second and fourth junction field effect transistors having P-channels.

Claim 12

A semiconductor device, comprising: a first complementary metal-oxide-silicon transistor pair including a first and a second metal-oxide-silicon transistor wherein said first metal-oxide-silicon transistor is a P-channel and said second metal-oxide-silicon transistor is an N-channel, with a first channel electrode of said first metal-oxide-silicon transistor serially coupled with a first channel electrode of said second metal-oxide-silicon transistor, and with gates of said first and second metal-oxide-silicon transistors being coupled together; a first junction field effect transistor connected between a second channel electrode of said first metal-oxide-silicon transistor and a first voltage source terminal, a gate of said first junction field effect transistor being connected to said first voltage source terminal; a second junction field effect transistor connected between a second channel electrode of said second metal-oxide-silicon transistor and a second voltage source terminal, a gate of said second junction field effect transistor being connected to said second voltage source terminal; a second complementary metal-oxide-silicon transistor pair including a third and a fourth metal-oxide-semiconductor transistor wherein said third metal-oxide-silicon transistor is a P-channel and said fourth metal-oxide-silicon transistor is an N-channel, with a P-channel of said third metal-oxide-silicon transistor serially coupled with a N-channel of said fourth metal-oxide-silicon transistor, and with gates of said third and fourth metal-oxide-silicon transistors being coupled to the first channel electrodes of said first and second metal-oxide-transistor; a third junction field effect transistor connected between a second channel electrode of said third metal-oxide-silicon transistor and a first voltage source terminal, a gate of said third junction field effect transistor being connected to said first voltage source terminal; and a fourth junction field effect transistor connected between a second channel electrode of said fourth metal-oxide-silicon transistor and a second voltage source terminal, a gate of said fourth junction field effect transistor being connected to said second voltage source terminal.

Claim 13

A semiconductor device, comprising: a first complementary metal-oxide-silicon transistor pair including a first and a second metal-oxide-silicon transistor wherein said first metal-oxide-silicon transistor is a P-channel and said second metal-oxide-silicon transistor is an N-channel, with a first channel electrode of said first metal-oxide-silicon transistor serially coupled with a first channel electrode of said second metal-oxide-silicon transistor, and with gates of said first and second metal-oxide-silicon transistors being coupled together; a first junction field effect transistor connected between a second channel electrode of said first metal-oxide-silicon transistor and a first voltage source terminal, a gate of said first junction field effect transistor being connected to said first voltage source terminal; a second junction field effect transistor connected between a second channel electrode of said second metal-oxide-silicon transistor and a second voltage source terminal, a gate of said second junction field effect transistor being connected to said second voltage source terminal; a second complementary metal-oxide-silicon transistor pair including a third and a fourth metal-oxide-semiconductor transistor wherein said third metal-oxide-silicon transistor is a P-channel and said fourth metal-oxide-silicon transistor is an N-channel, with a P-channel of said third metal-oxide-silicon transistor serially coupled with a N-channel of said fourth metal-oxide-silicon transistor, and with gates of said third and fourth metal-oxide-silicon transistors being coupled to the first channel electrodes of said first and second metal-oxide-transistor; a third junction field effect transistor connected between a second channel electrode of said third metal-oxide-silicon transistor and a first voltage source terminal, a gate of said third junction field effect transistor being connected to said first voltage source terminal; and a fourth junction field effect transistor connected between a second channel electrode of said fourth metal-oxide-silicon transistor and a second voltage source terminal, a gate of said fourth junction field effect transistor being connected to said second voltage source terminal.

Claim 14

The semiconductor device of claim 10, further comprised of said first and third junction field effect transistors having N-channels.

Claim 15

The semiconductor device of claim 10, further comprised of said second and fourth junction field effect transistors having P-channels.

Claim 16

The semiconductor device of claim 11, further comprised of said second and fourth junction field effect transistors having P-channels.

Claim 17

A semiconductor device, comprising: a first complementary metal-oxide-silicon transistor pair including a first and a second metal-oxide-silicon transistor with a P-channel of said first metal-oxide-silicon transistor serially coupled at a first node with a N-channel of said second metal-oxide-silicon transistor, with said P-channel of said first metal-oxide-silicon transistor and N-channel of said second metal-oxide-silicon transistor being coupled between first and second voltage source terminals, and with gates of said first and second metal-oxide-silicon transistors being coupled together; a second complementary metal-oxide-silicon transistor pair including a third and a fourth metal-oxide-semiconductor transistor with a P-channel of said third metal-oxide-silicon transistor serially coupled with a N-channel of said fourth metal-oxide-silicon transistor, with said P-channel of said third metal-oxide-silicon transistor and N-channel of said fourth metal-oxide-silicon transistor being coupled between said first and second voltage source terminals, and with gates of said third and fourth metal-oxide-silicon transistors being coupled together at a second node; and a junction field effect transistor connected between said first and second nodes, with a gate of said junction field effect transistor being connected to said first voltage source terminal.

Claim 18

A semiconductor device, comprising: a first complementary metal-oxide-silicon transistor pair including a first and a second metal-oxide-silicon transistor with a P-channel of said first metal-oxide-silicon transistor serially coupled at a first node with a N-channel of said second metal-oxide-silicon transistor, with said P-channel of said first metal-oxide-silicon transistor and N-channel of said second metal-oxide-silicon transistor being coupled between first and second voltage source terminals, and with gates of said first and second metal-oxide-silicon transistors being coupled together; a second complementary metal-oxide-silicon transistor pair including a third and a fourth metal-oxide-semiconductor transistor with a P-channel of said third metal-oxide-silicon transistor serially coupled with a N-channel of said fourth metal-oxide-silicon transistor, with said P-channel of said third metal-oxide-silicon transistor and N-channel of said fourth metal-oxide-silicon transistor being coupled between said first and second voltage source terminals, and with gates of said third and fourth metal-oxide-silicon transistors being coupled together at a second node; and a junction field effect transistor connected between said first and second nodes, with a gate of said junction field effect transistor being connected to said first voltage source terminal.

Claim 19

The semiconductor device of claim 14, further comprised of said junction field effect transistor having a N-channel and a gate connectable to the first voltage terminal.

Claim 20

The semiconductor device of claim 14, further comprised of said junction field effect transistor having a P-channel and a gate connectable to the second voltage terminal.

Claim 21

A semiconductor device, comprising: a first junction field effect transistor having one channel electrode and a gate connected to a first voltage source terminal; a second junction field effect transistor having one channel electrode and a gate connected to a second voltage source terminal; a first complementary metal-oxide-silicon transistor pair including a first and a second metal-oxide-silicon transistor with a P-channel of said first metal-oxide-silicon transistor serially coupled at a first node with a N-channel of said second metal-oxide-silicon transistor between second channel electrodes of said first and second junction field effect transistors, and with gates of said first and second metal-oxide-silicon transistors being coupled together; a third junction field effect transistor having one channel electrode and a gate connected to said first voltage source terminal; a fourth junction field effect transistor having one channel electrode and a gate connected to said second voltage source terminal; a second complementary metal-oxide-silicon transistor pair including a third and a fourth metal-oxide-semiconductor transistor with a P-channel of said third metal-oxide-silicon transistor serially coupled with a N-channel of said fourth metal-oxide-silicon transistor between second channel electrodes of said third and fourth junction field effect transistors, and with gates of said third and fourth metal-oxide-silicon transistors being coupled together to said first node.

Claim 22

A semiconductor device, comprising: a first junction field effect transistor having one channel electrode and a gate connected to a first voltage source terminal; a second junction field effect transistor having one channel electrode and a gate connected to a second voltage source terminal; a first complementary metal-oxide-silicon transistor pair including a first and a second metal-oxide-silicon transistor with a P-channel of said first metal-oxide-silicon transistor serially coupled at a first node with a N-channel of said second metal-oxide-silicon transistor between second channel electrodes of said first and second junction field effect transistors, and with gates of said first and second metal-oxide-silicon transistors being coupled together; a third junction field effect transistor having one channel electrode and a gate connected to said first voltage source terminal; a fourth junction field effect transistor having one channel electrode and a gate connected to said second voltage source terminal; a second complementary metal-oxide-silicon transistor pair including a third and a fourth metal-oxide-semiconductor transistor with a P-channel of said third metal-oxide-silicon transistor serially coupled with a N-channel of said fourth metal-oxide-silicon transistor between second channel electrodes of said third and fourth junction field effect transistors, and with gates of said third and fourth metal-oxide-silicon transistors being coupled together to said first node.

Claim 23

The semiconductor device of claim 17, further comprised of said first and third junction field effect transistors having N-channels.

Claim 24

The semiconductor device of claim 17, further comprised of said second and fourth junction field effect transistors having P-channels.

Claim 25

The semiconductor device of claim 18, further comprised of said second and fourth junction field effect transistors having P-channels.