US4943970A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Surface emitting laser
Assignee: Tacan Corp
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Filing: 1989-09-21
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Granted: 1990-07-24
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Expires: 2009-09-21
Abstract
Abstract A laser fabricated from a substrate having top and bottom surfaces. A first stack of mirror layers of alternating different refractive indices are formed upon the substrate top surface. An active layer defining a mesa is formed on top of the first stack of mirror layers. A second stack of alternating different refractive indices mirror layers are formed upon the active layer mesa. A current confinement layer is formed about the side of the active laser mesa. A first contact is formed upon the substrate bottom surface while a second contact is formed upon a portion of said active layer remote from the active layer mesa.
Inventors
- 👤 Eric M. Bradley
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 23:29
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/10; H01S5/18; H01S5/183; H01S5/18344; H01S5/1835; H01S5/02; H01S5/0206; H01S5/0207; H01S5/06; H01S5/068; H01S5/0683; H01S5/18341; H01S5/18361; H01S5/18369
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
176 words
A surface emitting laser diode comprising: a semiconductor substrate having top and bottom surfaces; a first plurality of alternating semiconductor mirror layers of differing refractive indicies formed upon said substrate; a semiconductor active layer formed upon said first plurality of semiconductor layers, said active layer having a central region and a surrounding outer region, said active layer central region being of greater thickness than said active layer outer region, wherein said active layer central region has a top and a side surface and said active layer outer region has a top surface intersecting said active layer central region side; a second plurality of said alternating semiconductor mirror layers formed upon said active central region top surface; a current confinement layer formed upon said active layer central region side surface and a portion of said active layer outer region top surface immediate said active layer central region side surface; first and second contacts respectively formed upon said substrate bottom surface and said active layer outer region top surface remote from said active layer central region side surface.
Claim 2
Dependent Claim
176 words
A surface emitting laser diode comprising: a semiconductor substrate having top and bottom surfaces; a first plurality of alternating semiconductor mirror layers of differing refractive indicies formed upon said substrate; a semiconductor active layer formed upon said first plurality of semiconductor layers, said active layer having a central region and a surrounding outer region, said active layer central region being of greater thickness than said active layer outer region, wherein said active layer central region has a top and a side surface and said active layer outer region has a top surface intersecting said active layer central region side; a second plurality of said alternating semiconductor mirror layers formed upon said active central region top surface; a current confinement layer formed upon said active layer central region side surface and a portion of said active layer outer region top surface immediate said active layer central region side surface; first and second contacts respectively formed upon said substrate bottom surface and said active layer outer region top surface remote from said active layer central region side surface.
Claim 3
Dependent Claim
38 words
The surface emitting laser of claim 1 wherein said active layer is formed of an n-type semiconductor material having a p-type region formed therein at said active layer central region side surface and said active layer outer region.
Claim 4
Dependent Claim
17 words
The surface emitting laser of claim 1 wherein said current confinement layer is formed of dielectric material.
Claim 5
Dependent Claim
18 words
The surface emitting laser of claim 2 wherein said current confinement layer is formed of a dielectric material.
Claim 6
Dependent Claim
35 words
The surface emitting laser of claim 1 wherein said current confinement layer comprises a p-type semiconductor material layer formed upon said active layer and an n-type semiconductor material layer formed upon said p-type semiconductor layer.
Claim 7
Dependent Claim
35 words
The surface emitting laser of claim 2 wherein said current confinement layer comprises a p-type semiconductor material layer formed upon said active layer and an n-type semiconductor material layer formed upon said p-type semiconductor layer.
Claim 8
Dependent Claim
123 words
A surface emitting laser comprising: a substrate having top and bottom surfaces; a first stack of mirror layers located upon said substrate top surface, said first stack layers of alternating indices of refraction; an active layer located upon said first stack, said active layer having a mesa extending above an adjacent base layer portion of said active layer; a second stack of mirror layers located upon a top surface of said mesa, said second stack layers of alternating indices of refraction; a current confinement layer located about said mesa and upon said adjacent base layer portion immediate said mesa; a first contact located upon said substrate bottom surface; and a second contact located upon said active layer adjacent to said base layer portion.
Claim 9
Dependent Claim
123 words
A surface emitting laser comprising: a substrate having top and bottom surfaces; a first stack of mirror layers located upon said substrate top surface, said first stack layers of alternating indices of refraction; an active layer located upon said first stack, said active layer having a mesa extending above an adjacent base layer portion of said active layer; a second stack of mirror layers located upon a top surface of said mesa, said second stack layers of alternating indices of refraction; a current confinement layer located about said mesa and upon said adjacent base layer portion immediate said mesa; a first contact located upon said substrate bottom surface; and a second contact located upon said active layer adjacent to said base layer portion.
Claim 10
Dependent Claim
16 words
The surface emitting laser of claim 7 wherein said substrate is formed of a semiconductor material.
Claim 11
Dependent Claim
21 words
The surface emitting laser of claim 7 wherein said first and second stack of mirror layers are formed of semiconductor materials.
Claim 12
Dependent Claim
17 words
The surface emitting laser of claim 7 wherein said active layer is formed of a semiconductor material.
Claim 13
Dependent Claim
17 words
The surface emitting laser of claim 7 wherein current confinement layer is formed of a dielectric material.
Claim 14
Dependent Claim
35 words
The surface emitting laser of claim 7 wherein said current confinement layer is comprised of a first layer of p-type semiconductor material having a second layer of n-type semiconductor material formed upon said first layer.
Claim 15
Dependent Claim
34 words
The surface emitting laser of claim 7 wherein said first and second contacts are respective layers of metalization with said second contact circumscribing said mesa and adjacent base layer portion immediately adjacent said mesa.
Claim 16
Dependent Claim
41 words
The surface emitting laser of claim 8 wherein said active layer is formed of an n-type semiconductor material, said active layer having a p-type region formed in said active layer surrounding and extending outwardly from a central portion of said mesa.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-07-23 | 1994-01-22 | 1994-07-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-07-23 | 1998-01-22 | 1998-07-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-07-23 | 2002-01-22 | 2002-07-24 | $7700.00 | Window Closed / Lapsed |