Surface luminous laser and manufacture thereof
Abstract
Abstract PURPOSE:To realize a surface liminous laser; which is suitable for mass production in a simple structure, can be manufactured at a manufacturing cost reduced than that in the conventional method and has an improved lingitudinal-mode stability; by a method wherein the distance between two reflected film layers is set at a specific value. CONSTITUTION:A first reflective film layer 9; which is the same conductive type as that of a first clad layer 2 and consists of by alternately laminating P (or N) type Alp Ga1-pAs layers 91 and P (or N) type AlqGa1-qAs layers 92 in a multilayer structure; is formed in the first clad layer 2, while a second reflective film layer 10; which is the same conductive type as that of a second clad layer 4 and consists of by alternately laminating N (or P) type AlpGa1-pAs layers 101 and N (or P) type AlqGa1-qAs layers 102 (provided that, y<x, y<z, p=q, p>=z, q>=z, p>=x, q>=x) in a multilayer structure; is formed in the second clad layer 4. The respective film thickness of both reflective film layers 9 and 10 is set at lambda/4n1 and lambda/4n2 (provided that, the lambda is the central luminous wavelength and the n1 and the n2 are respectively the respective refractive index of the first and second reflective film layers 9 and 10). Moreover, the distance between both reflective film layes 9 and 10 is set at a value of integral number times of lambda/2n3 (provided that, the n3 is the refractive index between both reflective film layers 9 and 10).
Inventors
- 👤 Haruo Tanaka
- 👤 田中 治夫
- 👤 Masahito Mushigami
- 👤 雅人 虫上
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