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US3703670A Expired / Lapsed US ⏱️ 0.0 years remaining

Electroluminescent diode configuration and method of forming the same

Assignee: Corning Glass Works
•
Filing: 1970-11-12
•
Granted: 1972-11-21
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Expires: 1990-11-12
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Abstract

Abstract An electroluminescent diode which includes an electromagnetic radiation emitting PN junction formed by diffusing, into both surfaces of a semiconductor slice of a first conductivity, a dopant material of opposite type conductivity. Contact metallizations are mounted within windows in an insulating barrier which covers said diode so as to form electrical contacts engaging both the N and P type areas of the diode. An annular reflector metallization pad is mounted on the surface of the device over the PN junction and spaced from one surface of the semiconductor material by the insulating coating so as to reflect light out through the surface opposite to that on which an antireflection coating has been placed.

Inventors

  • 👤 Hans J Kunz

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-25 02:53
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/83; H10H20/831; H10H20/01; H10H20/011; H10H20/018; H10H20/81; H10H20/814; H10H20/819; H10H20/84

Claims Analysis

Total Claims: 9
Claim 1
Independent Claim 139 words
An electroluminescent diode structure having a PN junction of the type emitting electromagnetic radiation therefrom through at least one of two surfaces of the structure, the diode structure comprising: semiconductor material of one conductance type having a first and second surface, a region of opposite type conductivity in said material extending from said first surface to said second surface forming a PN junction which extends to said first surface, metallization contact pads individually engaging portions of said structure of both conductance types at said first surface, a metallization reflector mounted on the structure in spaced relation from the first surface and correspondingly shaped and positioned above said PN junction portion extending to said first surface whereby a portion of the radiation emitted from the PN junction is reflected from said reflectors out of the structure through the second surface.
Claim 2
Dependent Claim 139 words
An electroluminescent diode structure having a PN junction of the type emitting electromagnetic radiation therefrom through at least one of two surfaces of the structure, the diode structure comprising: semiconductor material of one conductance type having a first and second surface, a region of opposite type conductivity in said material extending from said first surface to said second surface forming a PN junction which extends to said first surface, metallization contact pads individually engaging portions of said structure of both conductance types at said first surface, a metallization reflector mounted on the structure in spaced relation from the first surface and correspondingly shaped and positioned above said PN junction portion extending to said first surface whereby a portion of the radiation emitted from the PN junction is reflected from said reflectors out of the structure through the second surface.
Claim 3
Dependent Claim 139 words
An electroluminescent diode structure having a PN junction of the type emitting electromagnetic radiation therefrom through at least one of two surfaces of the structure, the diode structure comprising: semiconductor material of one conductance type having a first and second surface, a region of opposite type conductivity in said material extending from said first surface to said second surface forming a PN junction which extends to said first surface, metallization contact pads individually engaging portions of said structure of both conductance types at said first surface, a metallization reflector mounted on the structure in spaced relation from the first surface and correspondingly shaped and positioned above said PN junction portion extending to said first surface whereby a portion of the radiation emitted from the PN junction is reflected from said reflectors out of the structure through the second surface.
Claim 4
Dependent Claim 139 words
An electroluminescent diode structure having a PN junction of the type emitting electromagnetic radiation therefrom through at least one of two surfaces of the structure, the diode structure comprising: semiconductor material of one conductance type having a first and second surface, a region of opposite type conductivity in said material extending from said first surface to said second surface forming a PN junction which extends to said first surface, metallization contact pads individually engaging portions of said structure of both conductance types at said first surface, a metallization reflector mounted on the structure in spaced relation from the first surface and correspondingly shaped and positioned above said PN junction portion extending to said first surface whereby a portion of the radiation emitted from the PN junction is reflected from said reflectors out of the structure through the second surface.
Claim 5
Dependent Claim 23 words
A diode structure as in claim 1 wherein the metallization reflector is integral with a contact metallization positioned correspondingly above the PN junction.
Claim 6
Dependent Claim 29 words
An electroluminescent diode structure as in claim 1 wherein the PN junction includes a substantially cylindrical portion which terminates in annular shape at the first surface of the structure.
Claim 7
Dependent Claim 25 words
A diode structure as in claim 3 wherein said metallization reflector is annular in shape and spaced from said first surface by an insulator coating.
Claim 8
Dependent Claim 22 words
A diode structure as in claim 1 wherein said metallization reflector is isolated from said first surface by a surface barrier layer.
Claim 9
Dependent Claim 16 words
A diode structure as in claim 1 further comprising an antireflection coating covering the second surface.

References Cited (Backward Citations)

US3283207A Cited
US3343026A Cited
US3462605A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1975-11-21 1976-05-22 1976-11-21 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1979-11-21 1980-05-22 1980-11-21 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1983-11-21 1984-05-22 1984-11-21 $7700.00 Window Closed / Lapsed

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