Surface light-emission laser

Abstract

Abstract PURPOSE:To provide a surface light-emission laser, which can be implemented even at a low threshold current value, by forming a light resonator structure with an active layer, which comprises a semiconductor heterogeneous multilayer film and has an active function and a distribution feedback type light resonator function; providing clad layer for confining minority carriers; and arranging said structure and layer vertically with respect to a substrate side by side. CONSTITUTION:A light resonator structure 11 with an active layer comprises a semiconductor heterogeneous multilayer film and it is set in a P type. Therefore, minority carriers, i.e., electrons in this case, can be confined by energy- gap differences between a P type clad layer 12 and a P type active layer in the structur 11. A part, which is located at the right side of the light resonator structure 11 with active layer, is a carrier supplying layer 16 (electrons in this case), which is set in an N type by doping suitable atoms in the semiconductor heterogeneous multilayer film. An electrode 15 on the side of the N layer is formed on the upper surface of the carrier supplying layer 16. An electrode 14 on the side of the P type clad layer is formed on the surface of the etched- out part on the left.

Inventors

• 👤 Mutsuro Ogura
• 👤 睦郎 小倉
• 👤 Takafumi Yao
• 👤 隆文 八百

Bibliographic Details